Power sensor for integrated circuits

Patent metadata

Field	Value
Publication number	US-10466339-B2
Application number	US-201816186938-A
Country	US
Kind code	B2
Filing date	Nov 12, 2018
Priority date	Apr 26, 2014
Publication date	Nov 5, 2019
Grant date	Nov 5, 2019

Abstract

An on-chip power sensor and a millimeter-wave communication device (e.g. transmitter or transceiver) on a chip including the on-chip power sensor are described. The millimeter-wave communication device can also include a coupler disposed on a transmit path, the coupler being configured to receive a transmit signal and to provide the transmit signal to an antenna connection (e.g. pad). The on-chip power sensor can be configured to receive a coupled portion of the transmit signal from the coupler, and measure a transmit power of the transmit signal based on the coupled portion of the transmit signal.

First claim

What is claimed is:

1. A millimeter-wave communication device on a chip, comprising:
a coupler disposed on a transmit path, the coupler being configured to receive a transmit signal and to provide the transmit signal to an antenna connection; and
an on-chip power sensor that includes a resistor formed on a layer within the chip, the layer being configured to implement at least one transistor within the chip, wherein the on-chip power sensor is configured to:
receive a coupled portion of the transmit signal from the coupler, and
measure a transmit power of the transmit signal based on the coupled portion of the transmit signal.

2. The millimeter-wave communication device according to claim 1 , further comprising:
a power estimator configured to estimate the transmit power of the transmit signal; and
a splitter configured to receive the coupled portion of the transmit signal and to split the coupled portion of the transmit signal between the power estimator and the on-chip power sensor.

3. The millimeter-wave communication device according to claim 1 , wherein the layer is a silicide polysilicon layer used to connect the at least one transistor within the chip.

4. The millimeter-wave communication device according to claim 1 , wherein the resistor is a temperature dependent resistor.

5. The millimeter-wave communication device according to claim 2 , wherein:
the power estimator comprises a diode configured to produce a voltage based on the transmit power of a first portion of the coupled portion of the transmit signal provided to the power estimator by the splitter; and
the on-chip power sensor comprises a resistor whose resistance changes based on a temperature of the resistor, the temperature of resistor being dependent on the transmit power of a second portion of the coupled portion of the transmit signal provided to the on-chip power sensor by the splitter.

6. The millimeter-wave communication device according to claim 1 , wherein the on-chip power sensor is configured to measure the transmit power of the transmit signal based on a change of resistance of the on-chip power sensor.

7. The millimeter-wave communication device according to claim 6 , wherein the change of resistance is dependent on a transmit signal induced temperature change of the on-chip power sensor.

8. The millimeter-wave communication device according to claim 1 , further comprising an oscillator configured to generate the transmit signal.

9. The millimeter-wave communication device according to claim 1 , further comprising a second on-chip power sensor that is configured to:
receive a received signal via the antenna connection; and
measure a radio frequency (RF) power of the received signal, wherein the coupler is further configured to receive the received signal from the antenna connection and to provide the received signal to the second on-chip power sensor.

10. The millimeter-wave communication device according to claim 9 , further comprising a power estimator configured to estimate the transmit power of the transmit signal.

11. The millimeter-wave communication device according to claim 10 , wherein:
the power estimator comprises a diode configured to produce a voltage based on the transmit power of the transmit signal; and
the on-chip power sensor and/or the second on-chip power sensor comprises a resistor whose resistance changes based on a temperature of the resistor.

12. The millimeter-wave communication device according to claim 10 , further comprising a second power estimator configured to receive the received signal via the antenna connection and to estimate a RF power of the received signal.

13. The millimeter-wave communication device according to claim 1 , wherein the on-chip power sensor comprises:
a first capacitor having a first terminal connected to the coupler;
a first resistor connected between a second terminal of the first capacitor and ground; and
a second resistor connected in series with a second capacitor, the second resistor having a first terminal connected to the second terminal of the first capacitor and a second terminal connected to a first terminal of the second capacitor,
wherein a second terminal of the second capacitor is connected to ground such that the second resistor and the second capacitor are connected in parallel with first resistor.

14. The millimeter-wave communication device according to claim 1 , wherein the on-chip power sensor comprises:
a first capacitor having a first terminal connected to the coupler;
a first resistor connected in series with a second capacitor, the first resistor being connected to a second terminal of the first capacitor, and the second capacitor being connected between the first resistor and ground; and
a second resistor connected in series with a third capacitor, the second resistor being connected to the second terminal of the first capacitor, and the third capacitor being connected between the second resistor and ground,
wherein the second resistor and the third capacitor are connected in parallel with the first resistor and the second capacitor.

15. The millimeter-wave communication device according to claim 1 , further comprising an antenna coupled to the transmit path via the antenna connection.

16. A millimeter-wave communication device comprising:
a coupler disposed on a signal path, the coupler being configured to: receive a transmit signal via the signal path, receive a received signal from an antenna connection of the signal path, generate a coupled portion of the transmit signal, provide the transmit signal to the antenna connection of signal path, and generate a coupled portion of the received signal;
a first power estimator configured to estimate a transmit power of the signal based on a first portion of the coupled portion of the transmit signal;
a second power estimator configured to estimate a radio frequency (RF) power of the received signal based on a first portion of the coupled portion of the received signal;
a first on-chip power sensor configured to measure the transmit power of the transmit signal based on a second portion of the coupled portion of the transmit signal; and
a second on-chip power sensor that is configured to measure the RF power of the received signal based on a second portion of the coupled portion of the received signal.

17. The millimeter-wave communication device according to claim 16 , further comprising a splitter configured to receive the coupled portion of the transmit signal and to split the coupled portion of the transmit signal to generate a first coupled the first portion of the coupled portion of the transmit signal and the second portion of the coupled portion of the transmit signal.

18. The millimeter-wave communication device according to claim 17 , further comprising a second splitter configured to receive the coupled portion of the received signal and to split the coupled portion of the received signal to generate the first portion of the coupled portion of the received signal and the second portion of the coupled portion of the received signal.

19. A millimeter-wave communication device on a chip, comprising:
a coupler disposed on a transmit path, the coupler being configured to receive a signal and to provide the signal to an antenna connection; and
an on-chip power sensor configured to:
receive a coupled portion of the signal from the coupler, and
measure a transmit power of the signal based on the coupled portion of the signal, wherein:

(a) the on-chip power sensor comprises:
a first capacitor

Assignees

• Infineon Technologies Ag

Inventors

• Kammerer Jonas
• Knapp Herbert
• Li Hao

Classifications

• G01R19/00

  Arrangements for measuring currents or voltages or for indicating presence or sign thereof (G01R5/00 takes precedence; for measuring bioelectric currents or voltages A61B5/24) · CPC title

• H04B17/14

  of the whole transmission and reception path, e.g. self-test loop-back · CPC title

• H04B17/13

  of power amplifiers, e.g. gain or non-linearity · CPC title

• H04B17/102

  Power radiated at antenna · CPC title

• G01R21/12

  in circuits having distributed constants · CPC title