Organoplatinum compound for use in the chemical deposition of platinum compound thin films

Patent metadata

Field	Value
Publication number	US-10465283-B2
Application number	US-201615558057-A
Country	US
Kind code	B2
Filing date	May 9, 2016
Priority date	May 12, 2015
Publication date	Nov 5, 2019
Grant date	Nov 5, 2019

Abstract

An organoplatinum compound with the following formula for use as a raw material in the chemical deposition of platinum compound thin films. In the formula, n is 1 or more and 5 or less. Each of substituents R1 to R5 on the alkenyl amine is a hydrogen atom, an alkyl group or the like and has a carbon number of 4 or less. Each of alkyl anions R6 and R7 is an alkyl group having a carbon number of 1 or more and 3 or less. The vapor pressure of the organoplatinum compound is high enough to allow for the manufacturing of a platinum thin film at low temperature. It also has moderate thermal stability.

First claim

The invention claimed is:

1. A raw material for chemical deposition for manufacturing a platinum thin film or a platinum compound thin film by a chemical deposition method, the raw material comprising
an organoplatinum compound in which an alkenyl amine and alkyl anions that are coordinated to a divalent platinum as shown by a formula below,

wherein n is 1 or more and 5 or less; each of R 1 to R 5 represents any one of a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an amino group, an imino group, a cyano group and an isocyano group, and each has a carbon number of not more than 4; and each of R 6 and R 7 represents an alkyl group having a carbon number of 1 or more and 3 or less.

2. The raw material for chemical deposition according to claim 1 , wherein n is 2 or 3, and the raw material comprises any of organoplatinum compounds shown by formulae below,

wherein each of R 1 to R 5 represents any one of a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an amino group, an imino group, a cyano group and an isocyano group, and each has a carbon number of 4 or less; and each of R 6 and R 7 represents an alkyl group having a carbon number of 1 or more and 3 or less.

3. The raw material for chemical deposition according to claim 2 , wherein each of R 1 to R 5 represents any one of a hydrogen atom, a methyl group, an ethyl group and a propyl group.

4. The raw material for chemical deposition according to claim 2 , wherein each of R 6 and R 7 represents any one of a methyl group, an ethyl group and an n-propyl group.

5. A chemical deposition method of a platinum thin film or a platinum compound thin film, the method comprising: vaporizing a raw material composed of an organoplatinum compound to form a raw material gas, and heating the raw material gas while introducing the raw material gas onto a substrate surface,
wherein the raw material for chemical deposition defined in claim 2 is used as the raw material.

6. The raw material for chemical deposition according to claim 1 wherein each of R 1 to R 5 represents any one of a hydrogen atom, a methyl group, an ethyl group and a propyl group.

7. The raw material for chemical deposition according to claim 6 , wherein each of R 6 and R 7 represents any one of a methyl group, an ethyl group and an n-propyl group.

8. A chemical deposition method of a platinum thin film or a platinum compound thin film, the method comprising: vaporizing a raw material composed of an organoplatinum compound to form a raw material gas, and heating the raw material gas while introducing the raw material gas onto a substrate surface,
wherein the raw material for chemical deposition defined in claim 6 is used as the raw material.

9. The raw material for chemical deposition according to claim 1 wherein each of R 6 and R 7 represents any one of a methyl group, an ethyl group and an n-propyl group.

10. A chemical deposition method of a platinum thin film or a platinum compound thin film, the method comprising: vaporizing a raw material composed of an organoplatinum compound to form a raw material gas, and heating the raw material gas while introducing the raw material gas onto a substrate surface,
wherein the raw material for chemical deposition defined in claim 9 is used as the raw material.

11. A chemical deposition method of a platinum thin film or a platinum compound thin film, the method comprising: vaporizing a raw material composed of an organoplatinum compound to form a raw material gas, and heating the raw material gas while introducing the raw material gas onto a substrate surface,
wherein the raw material for chemical deposition defined in claim 1 is used as the raw material.

Assignees

• Tanaka Precious Metal Ind

Inventors

• Harada Ryosuke
• SHIGETOMI Toshiyuki
• Suzuki Kazuharu
• Nabeya Shunichi
• Kumakura Akiko
• Kobayashi Rumi
• Sone Takayuki

Classifications

• H10P14/42

  using a gas or vapour · CPC title

• C07F15/00

  Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table · CPC title

• C07C211/21

  Monoamines · CPC title

• C23C16/46

  characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence) · CPC title

• C23C16/18 Primary

  from metallo-organic compounds · CPC title