Specific N and P active materials for organic photoelectric conversion layers in organic photodiodes

Patent metadata

Field	Value
Publication number	US-10464935-B2
Application number	US-201615558578-A
Country	US
Kind code	B2
Filing date	Mar 31, 2016
Priority date	Mar 31, 2015
Publication date	Nov 5, 2019
Grant date	Nov 5, 2019

Abstract

The field of the DISCLOSURE lies in active materials for organic image sensors. The present disclosure relates to naphthalene diimide-based molecules and naphthalene diimide dimer-based molecules. The present disclosure relates to transparent N materials and/or to transparent P materials including the molecule(s) according to the present disclosure and their use in absorption layer(s), photoelectric conversion layer(s) and/or an organic image sensor and methods for their synthesis. The present disclosure also relates to photoelectric conversion layer(s) including an active material according to the present disclosure, to a device, including active material(s) according to the present disclosure or photoelectric conversion layer(s) according to the present disclosure. Moreover, the present disclosure relates to an organic image sensor including photoelectric conversion layer(s) according to the present disclosure.

First claim

The invention claimed is:

1. A naphthalene diimide (NDI)-based molecule represented by formula I

wherein
each R is

and
each R 1 is

2. A transparent N or P or ambipolar material, comprising the naphthalene diimide (NDI)-based molecule of claim 1 .

3. The transparent N or P or ambipolar material of claim 2 , which
has an absorption coefficient of less than about 60,000 cm −1 in visible wavelength range, and
is an organic based compound forming homogenous films using vacuum deposition or spin coating.

4. A P:N heterojunction or a bi(multi) layer junction, comprising
the naphthalene diimide (NDI)-based molecule of claim 1 , and
optionally a further N and/or P material,
wherein the further N and/or P material exhibits absorption in visible wavelength range.

5. A method for making an absorption layer, the method comprising:
introducing the naphthalene diimide (NDI)-based molecule of claim 1 , and
optionally a further N and/or P material into the absorption layer,
wherein the further N and/or P material exhibits absorption in visible wavelength range.

6. A method for making a photoelectric conversion layer and/or an organic and/or hybrid module for optoelectronic application, the method comprising:
introducing the naphthalene diimide (NDI)-based molecule of claim 1 , and optionally a further N and/or P material
into the photoelectric conversion layer and/or the organic and/or hybrid module for optoelectronic application,
wherein the further N and/or P material exhibits absorption in visible wavelength range.

7. A photoelectric conversion layer, comprising the naphthalene diimide (NDI)-based molecule of claim 1 ,
optionally a further N and/or P material, wherein the further N and/or P material exhibits absorption in visible wavelength range
and optionally at least one further molecule.

8. An absorption layer, comprising the naphthalene diimide (NDI)-based molecule of claim 1 ,
optionally a further N and/or P material, and
optionally at least one molecule,
wherein the further N and/or P material exhibits absorption in visible wavelength range.

9. A device, comprising at least one naphthalene diimide (NDI)-based molecule of claim 1 ,
wherein said device is an organic image sensor, an hybrid image sensor, photodiode, an organic photovoltaic, an organic light-emitting diode (OLED), or an organic thin-film transistor (OTFT).

10. The device according claim 9 , further comprising at least one further N and/or P material exhibiting absorption in visible wavelength range,
and/or at least one further molecule.

11. An organic image sensor, comprising
(a) an organic photoelectric conversion unit comprising at least one photoelectric conversion layer of claim 7 ,
(b) at least one electrode,
(c) a substrate, and
(d) optionally, a second electrode on top of the at least one photoelectric conversion layer.

12. A hybrid Silicon-organic image sensor or an organic image sensor, comprising
(a) an organic photoelectric conversion unit or units comprising at least one photoelectric conversion layer of claim 7 ,
(b) optionally, a Si based photoelectric conversion unit,
(c) metal wiring,
(d) a (CMOS) substrate, and
(e) at least one insulating layer.

13. The organic image sensor according to claim 11 , wherein said organic photoelectric conversion unit comprises different layers.

14. A method for synthesizing transparent n materials, comprising
imidizing 2,6-dibromonaphthalene-1,4,5,8-tetracarboxylic dianhydride derivatives in the presence of a R-primary amine and acid, and
subsequently performing a palladium catalyzed Suzuki Coupling with a R1-boronic ester, to obtain the naphthalene diimide (NDI)-based molecule of claim 1 .

Assignees

• Sony Corp

Inventors

• Rosselli Silvia
• Knorr Nikolaus
• Miteva Tzenka
• Nelles Gabriele
• Deichmann Vitor
• Danner David
• Ford William E
• Chercka Dennis
• Yakutkin Vladimir
• SCHELLER Lars-Peter

Classifications

• Y02E10/549

  Organic PV cells · CPC title

• C07D471/06 Primary

  Peri-condensed systems · CPC title

• H01L27/286

  Electricity · mapped topic

• H01L51/0067

  Electricity · mapped topic

• H01L51/0062

  Electricity · mapped topic