Package substrate and semiconductor package including the same
US-2024429153-A1 · Dec 26, 2024 · US
US10462899B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10462899-B2 |
| Application number | US-201815882063-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 29, 2018 |
| Priority date | Apr 24, 2017 |
| Publication date | Oct 29, 2019 |
| Grant date | Oct 29, 2019 |
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There is provided a ceramic substrate including: a silicon nitride crystal phase containing a plurality of silicon nitride crystals, and grain boundaries between the silicon nitride crystals; and a silicate phase containing magnesium silicate crystals and rare earth silicate crystals, respective maximum particle sizes of the magnesium silicate crystals and the rare earth silicate crystals being smaller than that of the silicon nitride crystals, the silicate phase being positioned in the grain boundaries.
Opening claim text (preview).
What is claimed is: 1. A ceramic substrate, comprising: a silicon nitride crystal phase containing a plurality of silicon nitride crystals, and grain boundaries between the silicon nitride crystals; and a silicate phase containing magnesium silicate crystals and rare earth silicate crystals, respective maximum particle sizes of the magnesium silicate crystals and the rare earth silicate crystals being smaller than that of the silicon nitride crystals, the silicate phase being positioned in the grain boundaries, wherein the rare earth silicate crystals contain at least one of erbium silicate crystals and yttrium silicate crystals and the at least one of erbium silicate crystals and yttrium silicate crystals have minimum particle sizes that are smaller than that of the magnesium silicate crystals. 2. The ceramic substrate according to claim 1 , wherein a content of the silicate phase in the ceramic substrate is 3 to 20% by mass. 3. The ceramic substrate according to claim 1 , wherein a content of the magnesium silicate crystals in the silicate phase is 20 to 90% by mass. 4. The ceramic substrate according to claim 2 , wherein a content of the magnesium silicate crystals in the silicate phase is 20 to 90% by mass. 5. The ceramic substrate according to claim 1 , wherein the magnesium silicate crystals and the rare earth silicate crystals are positioned in mutually different portions of the grain boundaries. 6. An electronic device, comprising: a ceramic substrate, comprising a silicon nitride crystal phase containing a plurality of silicon nitride crystals, and grain boundaries between the silicon nitride crystals, and a silicate phase containing magnesium silicate crystals and rare earth silicate crystals, respective maximum particle sizes of the magnesium silicate crystals and the rare earth silicate crystals being smaller than that of the silicon nitride crystals, the silicate phase being positioned in the grain boundaries; and an electronic component thermally connected to the ceramic substrate, wherein the rare earth silicate crystals contain at least one of erbium silicate crystals and yttrium silicate crystals and the at least one of erbium silicate crystals and yttrium silicate crystals have minimum particle sizes that are smaller than that of the magnesium silicate crystals.
between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title
Encapsulations, e.g. protective coatings · CPC title
Ceramics or glasses · CPC title
Ceramics or glasses (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence) · CPC title
Micrometer sized grains, i.e. from 1 to 100 micron · CPC title
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