Magnetic memory device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-10461245-B2
Application number	US-201514637019-A
Country	US
Kind code	B2
Filing date	Mar 3, 2015
Priority date	Sep 4, 2014
Publication date	Oct 29, 2019
Grant date	Oct 29, 2019

Abstract

According to one embodiment, a method of manufacturing a magnetic memory device, includes forming a stack film including a magnetic layer on an underlying area, forming a hard mask on the stack film, forming a stack structure by etching the stack film using the hard mask as a mask, forming a first protective insulating film on a side surface of the stack structure, and performing an oxidation treatment.

First claim

What is claimed is:

1. A magnetic memory device comprising:
a stack structure which is formed on an underlying area and includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer;
a protective insulating film covering the stack structure and provided along upper and side surfaces of the stack structure; and
an interlayer insulating film covering upper and side surfaces of the protective insulating film,
wherein:
a portion of the protective insulating film formed on the side surface of the stack structure is thicker than a portion of the protective insulating film formed on the upper surface of the stack structure,
the protective insulating film includes a first protective insulating film formed along the side surface of the stack structure, and a second protective insulating film covering the stack structure and the first protective insulating film,
a side surface of the first magnetic layer, a side surface of the nonmagnetic layer, and a side surface of the second magnetic layer are provided continuously without a step,
the first protective insulating film covers the side surfaces of the first magnetic layer, the nonmagnetic layer, and the second magnetic layer, and
an oxygen concentration at a boundary between the first protective insulating film and the second protective insulating film is higher than that within the first protective insulating film and that within the second protective insulating film.

2. The device of claim 1 , wherein the first protective insulating film is formed of a silicon nitride film.

3. The device of claim 1 , wherein the second protective insulating film is formed of a silicon nitride film.

4. The device of claim 1 , wherein the first protective insulating film is formed of a silicon nitride film and the second protective insulating film is formed of a silicon nitride film.

5. The device of claim 1 , wherein the protective insulating film is formed along an upper surface of the underlying area.

6. The device of claim 1 , wherein a lower surface of the protective insulating film and an upper surface of the underlying area exist in a same plane.

7. A magnetic memory device comprising:
a stack structure which is formed on an underlying area and includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer;
a protective insulating film covering the stack structure and provided along upper and side surfaces of the stack structure; and
an interlayer insulating film covering upper and side surfaces of the protective insulating film,
wherein:
a portion of the protective insulating film formed on the side surface of the stack structure is thicker than a portion of the protective insulating film formed on the upper surface of the stack structure,
the protective insulating film includes a first protective insulating film formed along the side surface of the stack structure, and a second protective insulating film covering the stack structure and the first protective insulating film,
a side surface of the first magnetic layer, a side surface of the nonmagnetic layer, and a side surface of the second magnetic layer are provided continuously without a step,
the first protective insulating film covers the side surfaces of the first magnetic layer, the nonmagnetic layer, and the second magnetic layer, and
an oxygen concentration at a boundary between the underlying area and the second protective insulating film is higher than that within the underlying area and that within the second protective insulating film.

8. The device of claim 7 , wherein the first protective insulating film is formed of a silicon nitride film.

9. The device of claim 7 , wherein the second protective insulating film is formed of a silicon nitride film.

10. The device of claim 7 , wherein the first protective insulating film is formed of a silicon nitride film and the second protective insulating film is formed of a silicon nitride film.

11. The device of claim 7 , wherein the protective insulating film is formed along an upper surface of the underlying area.

12. The device of claim 7 , wherein a lower surface of the protective insulating film and an upper surface of the underlying area exist in a same plane.

Assignees

• Toshiba Memory Corp

Inventors

• Tsubata Shuichi
• Yoshikawa Masatoshi
• Seto Satoshi
• Tomioka Kazuhiro

Classifications

• H01L43/12 Primary

  Electricity · mapped topic

• H01L27/222

  Electricity · mapped topic

• H01L43/02

  Electricity · mapped topic

• H10N50/01 Primary

  Manufacture or treatment · CPC title

• H10N50/80 Primary

  Constructional details · CPC title