Power module, power semiconductor device and power module manufacturing method

Patent metadata

Field	Value
Publication number	US-10461010-B2
Application number	US-201716070839-A
Country	US
Kind code	B2
Filing date	Mar 27, 2017
Priority date	Apr 4, 2016
Publication date	Oct 29, 2019
Grant date	Oct 29, 2019

Abstract

The power module of the invention includes a power element, a metal base for dissipating heat from the power element, a lead frame electrically connected to electrodes of the power element, and a resin enclosure that encapsulates the power element so that one surface of the metal base and a part of the lead frame are exposed from the enclosure. The resin enclosure of the power module includes: a body portion in which the power element and a part of the lead frame are placed, and at a bottom surface of which the one surface of the metal base is exposed; and a rib portion which is placed on the bottom surface of the body portion so as to surround an outer periphery of the metal base, and is formed to protrude from the bottom surface of the body portion in a direction perpendicular to the bottom surface.

First claim

The invention claimed is:

1. A power module which comprises a power element, a metal base for dissipating heat from the power element, a lead frame electrically connected to electrodes of the power element, and a resin enclosure that encapsulates the power element so that one surface of the metal base and a part of the lead frame are exposed from the enclosure,
said resin enclosure comprising:
a body portion in which the power element and a part of the lead frame are placed, and at a bottom surface of which said one surface of the metal base is exposed; and
a rib portion which is placed on the bottom surface of the body portion so as to surround an outer periphery of the metal base, and is formed to protrude from the bottom surface of the body portion in a direction perpendicular to the bottom surface, the rib portion extending lower than said one surface of the metal base;
wherein the rib portion has a depression at its end overhanging from the bottom surface.

2. The power module of claim 1 , wherein, in the rib portion, a rib-portion height that is a height from the bottom surface of the body portion to an end which is farthest from the bottom surface of the body portion, is larger than a connection width in a transverse cross-section with which the rib portion is connected to the bottom surface of the body portion.

3. The power module of claim 1 , wherein, in the rib portion, its shape in a transverse cross-section that is a cross-section perpendicular to the bottom surface of the body portion is a taper shape in which a connection width with which the rib portion is connected to the bottom surface of the body portion is larger than an end width of an end overhanging from the bottom surface.

4. The power module of claim 1 , further comprising an insulating sheet located between the lead frame and the metal base.

5. The power module of claim 1 , wherein the rib portion has a plurality of ribs, and
wherein the plurality of ribs are placed at a same height so as to surround the exposed one surface of the metal base.

6. The power module of claim 1 , wherein the rib portion has a plurality of ribs, and
wherein, with respect to at least one of the ribs, a rib height that is a height from the bottom surface of the body portion to an end of that rib which is farthest from the bottom surface of the body portion, is lower than the rib height with respect to the other one of the ribs.

7. A power semiconductor device which comprises the power module of claim 1 , and which further comprises a heatsink having an on-base stepped part, wherein a space is formed between the on-base stepped part and the rib portion.

8. The power module of claim 1 , wherein, in the resin enclosure, the bottom surface of the body portion forms a quadrilateral shape having long sides and short sides;
wherein the rib portion has a plurality of ribs;
wherein two of the plurality of ribs are long-side ribs that are placed peripherally on the bottom surface at the respective long sides;
wherein the other two of the plurality of ribs are short-side ribs that are placed peripherally on the bottom surface at the respective short sides; and
wherein a connection width in a transverse cross-section of the long-side rib, with which the long-side rib is connected to the bottom surface of the body portion, is larger than a connection width in a transverse cross-section of the short-side rib, with which the short-side rib is connected to the bottom surface of the body portion.

9. The power module of claim 1 , wherein terminals provided as the part of the lead frame exposed from the resin enclosure, are each partly covered by a resin part.

10. The power module of claim 1 , wherein the resin enclosure includes the rib portion on the bottom surface correspondingly to a region where the part of the lead frame is exposed.

11. The power module of claim 1 , wherein, in the resin enclosure, a length in a direction perpendicular to the bottom surface of the resin enclosure, which is provided between a frame-contacting-region bottom side that is placed in a frame-contacting region from which the lead frame is getting exposed and on a side toward the bottom surface, and the exposed surface of the metal base, is shorter than a length in a direction perpendicular to the bottom surface of the resin enclosure, which is provided between a frame-contacting-region upper side that is placed in the frame-contacting region on a side toward an upper surface of the resin enclosure that is opposite to the bottom surface, and the upper surface.

12. The power module of claim 1 , wherein the power element is formed of a wide bandgap semiconductor material.

13. The power module of claim 12 , wherein the wide bandgap semiconductor material is silicon carbide, a gallium nitride-based material or diamond.

14. A power semiconductor device which comprises the power module of claim 1 , and a heatsink connected through a grease to the metal base of the power module,
wherein the heatsink comprises a heatsink foundation part and an on-base stepped part that is connected through the grease to the metal base, and
wherein the power module is fixed to the heatsink so that the rib portion surrounds an outer periphery of the on-base stepped part.

15. The power semiconductor device of claim 14 , wherein the power module has a through-hole that penetrates the metal base from an upper surface opposite to the bottom surface, and
wherein the power module is fixed to the on-base stepped part of the heatsink by means of a screw inserted in the through-hole.

16. The power semiconductor device of claim 14 , wherein the power module has a through-hole that penetrates the metal base from an upper surface opposite to the bottom surface,
wherein the heatsink has a groove in which the rib portion of the power module is to be inserted, and
wherein the rib portion of the power module is inserted in the groove of the heatsink and the power module is fixed to the heatsink by means of a screw inserted in the through-hole.

17. The power semiconductor device of claim 15 , wherein, in the power module, the through-hole is formed singularly at its center.

18. A power module manufacturing method of manufacturing the power module of claim 1 , wherein, in a rib-end forming part of the mold at which the end of the rib portion overhanging from the bottom surface of the resin enclosure is to be formed, a plurality of pin openings in which pins for ejecting the resin enclosure are to be inserted are formed;
said power module manufacturing method comprising:
a step of placing an intermediate-product assembly which comprises the power element, the metal base and the lead frame, in a mold so that the metal base is in contact with its metal-base placement part and a part of the lead frame is exposed from the mold;
a step of forming the resin enclosure by injecting a transfer-mold resin into the mold in a state in which the pin openings are closed with the pins; and
a step of forming depressions in the rib portion in such a manner that, at the time the resin enclosure is ejected from the mold, the pins are inserted beyond the pin openings up to a depth that is larger than a width in a transverse direction of the end of the rib portion, so that the pins push out the rib portion of the resin enclosure.

19. The power module manufacturing method of claim 18 , wherein, in the mold, a length in a direction perpendicular to the bottom surface of the resin enclosure, which is provided between the metal-base placement part with which the metal base is

Assignees

• Mitsubishi Electric Corp

Inventors

• Yoshihara Hiroyuki
• Nakajima Dai
• Goto Masaki
• Kitai Kiyofumi

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/753

  between laterally-adjacent chips · CPC title

• H10W74/10

  characterised by their shape or disposition · CPC title

• H10W90/00

  Package configurations · CPC title

• H10W74/111 Primary

  the semiconductor body being completely enclosed · CPC title