Magnesium diboride superconducting thin-film wire and method for producing same

US10460862B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10460862-B2
Application numberUS-201515512014-A
CountryUS
Kind codeB2
Filing dateOct 16, 2015
Priority dateNov 28, 2014
Publication dateOct 29, 2019
Grant dateOct 29, 2019

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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Abstract

Official abstract text for this publication.

An object of the invention is to provide: an MgB2 superconducting thin-film wire that exhibits excellent Jc characteristics even under a 20 K magnetic field; and a method for producing thereof. The MgB2 superconducting thin-film wire includes a long substrate and an MgB2 thin film formed on the long substrate. The MgB2 thin film has a microtexture such that MgB2 columnar crystal grains stand densely together on the surface of the long substrate, and has Tc of 30 K or higher. In grain boundary regions of the MgB2 columnar crystal grains, a predetermined transition metal element is dispersed and segregated. The predetermined transition metal element is an element having a body-centered cubic lattice structure.

First claim

Opening claim text (preview).

The invention claimed is: 1. A magnesium diboride superconducting thin-film wire, comprising: a long substrate; a magnesium diboride thin film formed on the long substrate, wherein the magnesium diboride thin film includes magnesium diboride columnar crystal grains; and a transition metal element layer formed on the magnesium diboride thin film, wherein the transition metal layer is diffused into grain boundaries of the magnesium diboride columnar crystal grains; wherein: the magnesium diboride thin film has a microtexture such that the magnesium diboride columnar crystal grains stand densely together on a surface of the long substrate, and the transition metal element layer is formed from a predetermined transition metal element that has a body-centered cubic lattice structure. 2. The magnesium diboride superconducting thin-film wire according to claim 1 , wherein the magnesium diboride thin film has a laminate structure made up of a plurality of layers. 3. The magnesium diboride superconducting thin-film wire according to claim 2 , wherein the transition metal element layer is formed between the plurality of layers. 4. The magnesium diboride superconducting thin-film wire according to claim 2 , wherein the long substrate contains iron as a main constituent. 5. The magnesium diboride superconducting thin-film wire according to claim 1 , wherein the predetermined transition metal element contains at least iron or manganese. 6. The magnesium diboride superconducting thin-film wire according to claim 1 , wherein an additional layer of the transition metal element is formed between the long substrate and the magnesium diboride thin film. 7. The magnesium diboride superconducting thin-film wire according to claim 1 , wherein the predetermined transition metal element is vanadium. 8. The magnesium diboride superconducting thin-film wire according to claim 1 , wherein the predetermined transition metal element is manganese. 9. The magnesium diboride superconducting thin-film wire according to claim 1 , wherein the predetermined transition metal element is iron. 10. The magnesium diboride superconducting thin-film wire according to claim 1 , wherein the predetermined transition metal element is niobium. 11. The magnesium diboride superconducting thin-film wire according to claim 1 , wherein the predetermined transition metal element is molybdenum. 12. The magnesium diboride superconducting thin-film according to claim 1 , wherein the predetermined transition metal element is tantalum. 13. The magnesium diboride superconducting thin-film wire according to claim 1 , wherein the predetermined transition metal element is tungsten. 14. A method for producing a magnesium diboride superconducting thin-film wire comprising the steps of: forming, on a long substrate, a magnesium diboride thin film having a microtexture such that magnesium diboride columnar crystal grains stand densely together on the surface of the long substrate; forming a layer of a predetermined transition metal element on the surface of the magnesium diboride thin film and/or between the long substrate and the magnesium diboride thin film; and diffusing the predetermined transition metal element preferentially into the grain boundary regions of the magnesium diboride columnar crystal grains by a heat treatment, the predetermined transition metal element is an element having a body-centered cubic lattice structure. 15. The method for producing a magnesium diboride superconducting thin-film wire according to claim 14 , wherein the step of forming the magnesium diboride thin film includes a plurality of times of depositing magnesium diboride thin film layers to form a laminate structure made up of a plurality of layers. 16. The method for producing a magnesium diboride superconducting thin-film wire according to claim 15 , wherein the step of forming the magnesium diboride thin film further includes the step of depositing a transition metal element intermediate layer between the magnesium diboride thin film layers. 17. The method for producing a magnesium diboride superconducting thin-film wire according to claim 14 , wherein the predetermined transition metal element contains at least iron or manganese. 18. The method for producing a magnesium diboride superconducting thin-film wire according to claim 14 , wherein: the magnesium diboride thin film is formed under a vacuum at temperatures from 250° C. to 300° C. in the step of forming of the magnesium diboride thin film; and diffusion heat treatment for the transition metal element is performed under a vacuum at temperatures from 300° C. to below 600° C. in the step of diffusing the predetermined transition metal element.

Assignees

Inventors

Classifications

  • characterised by the composition · CPC title

  • H01F6/06Primary

    Coils, e.g. winding, insulating, terminating or casing arrangements therefor · CPC title

  • Electric properties · CPC title

  • C01B35/04Primary

    Metal borides · CPC title

  • for applying magnetic films to substrates · CPC title

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What does patent US10460862B2 cover?
An object of the invention is to provide: an MgB2 superconducting thin-film wire that exhibits excellent Jc characteristics even under a 20 K magnetic field; and a method for producing thereof. The MgB2 superconducting thin-film wire includes a long substrate and an MgB2 thin film formed on the long substrate. The MgB2 thin film has a microtexture such that MgB2 columnar crystal grains stand de…
Who is the assignee on this patent?
Hitachi Ltd
What technology area does this patent fall under?
Primary CPC classification H01F6/06. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Oct 29 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).