Conductive structure and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-10459547-B2
Application number	US-201615533544-A
Country	US
Kind code	B2
Filing date	Feb 26, 2016
Priority date	Feb 26, 2015
Publication date	Oct 29, 2019
Grant date	Oct 29, 2019

Abstract

The present specification relates to a conductive structure and a method for manufacturing the same.

First claim

The invention claimed is:

1. A conductive structure comprising:
a substrate;
a metal layer provided on the substrate; and
a light reflection reducing layer comprising a copper-nickel oxide provided on at least one surface of the metal layer,
wherein the light reflection reducing layer has copper content of 15 at % or more and 55 at % or less; and
the light reflection reducing layer has nickel content of 1 at % or more and 30 at % or less.

2. The conductive structure of claim 1 , wherein, in the light reflection reducing layer, a ratio of the nickel content to the copper content (Ni (at %)/Cu (at %)) is 0.01 or more and 1.8 or less.

3. The conductive structure of claim 1 , wherein reflectivity on a surface of the light reflection reducing layer is 40% or less in light having a wavelength of 600 nm.

4. The conductive structure of claim 1 , wherein the light reflection reducing layer has a refractive index (n) of 2 or more and 2.4 or less in light having a wavelength of 600 nm.

5. The conductive structure of claim 1 , wherein the light reflection reducing layer has an extinction coefficient (k) of 0.3 or more and 1.2 or less in light having a wavelength of 600 nm.

6. The conductive structure of claim 1 , wherein the light reflection reducing layer has a thickness of 10 nm or more and 100 nm or less.

7. The conductive structure of claim 1 , wherein an amount of change in the average light reflectivity of the light reflection reducing layer is 10% or less in a wavelength range of 380 nm to 780 nm after 24 hours under a high temperature atmosphere of 150° C.

8. The conductive structure of claim 1 , wherein light transmittance of the light reflection reducing layer is 20% or less in light having a wavelength of 600 nm after 12 hours under an atmosphere of 25° C. and 5 mass % of NaCl solution spray.

9. The conductive structure of claim 1 , wherein an amount of change in the average light reflectivity of the light reflection reducing layer is 20% or less after 10 days under a high temperature-high humidity atmosphere of 85° C. and relative humidity of 85%.

10. The conductive structure of claim 1 , wherein the metal layer is a metal pattern layer comprising a plurality of openings and a conductive line dividing the openings.

11. The conductive structure of claim 1 , further comprising an additional metal layer between the substrate and the metal layer.

12. The conductive structure of claim 1 , further comprising a transparent conductive layer between the substrate and the metal layer.

13. The conductive structure of claim 1 , which has a structure in which the substrate, the metal layer and the light reflection reducing layer are consecutively laminated in this order; a structure in which the substrate, the light reflection reducing layer and the metal layer are consecutively laminated in this order; or a structure in which the substrate, the light reflection reducing layer, the metal layer and the light reflection reducing layer are consecutively laminated in this order.

14. A touch panel comprising the conductive structure of claim 1 .

15. A display device comprising the touch panel of claim 14 .

16. A method for manufacturing a conductive structure comprising:
preparing a substrate;
forming a metal layer on the substrate; and
forming a light reflection reducing layer comprising a copper-nickel oxide on at least one surface of the metal layer,
wherein the light reflection reducing layer has copper content of 15 at % or more and 55 at % or less, and the light reflection reducing layer has nickel content of 1 at % or more and 30 at % or less.

17. The method for manufacturing a conductive structure of claim 16 , wherein the forming of a light reflection reducing layer uses a physical evaporation method.

18. The method for manufacturing a conductive structure of claim 16 , wherein the forming of a light reflection reducing layer uses a sputtering method under an atmosphere of oxygen partial pressures of 30% or greater.

19. The method for manufacturing a conductive structure of claim 16 , further comprising simultaneously patterning the metal layer and the light reflection reducing layer.

20. The method for manufacturing a conductive structure of claim 19 , wherein the simultaneous patterning is batch etching the metal layer and the light reflection reducing layer using an etchant.

Assignees

• Lg Chemical Ltd

Inventors

• Yoon Junghwan
• Song Doohoon
• Jang Song Ho
• Park Jinwoo
• Kim Ki-Hwan

Classifications

• B32B2307/202

  Conductive · CPC title

• G06F3/041 Primary

  Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means · CPC title

• G02F1/00

  Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics · CPC title

• B32B2311/00

  Metals, their alloys or their compounds · CPC title

• H01B5/14 Primary

  comprising conductive layers or films on insulating-supports · CPC title