Meta optical device and method of designing the same

Patent metadata

Field	Value
Publication number	US-10459258-B2
Application number	US-201715668297-A
Country	US
Kind code	B2
Filing date	Aug 3, 2017
Priority date	Aug 3, 2016
Publication date	Oct 29, 2019
Grant date	Oct 29, 2019

Abstract

A method of designing a meta optical device is provided. The method includes: setting, via a processor, design data for arrangement and dimensions of a nanostructure of the meta optical device, according to a function to be implemented by the meta optical device; obtaining a phase change graph with respect to a change in the dimensions; setting a shape dimension region with phase defect in the phase change graph; and substituting a shape dimension with phase defect, which is included in the shape dimension region with phase defect among the dimensions included in the design data, with a substitution value that is outside the shape dimension region with phase defect. Accordingly, a meta optical device having no phase defect is implemented.

First claim

What is claimed is:

1. A method of designing a meta optical device, the method comprising:
setting, via a processor, design data for arrangement and shape dimensions of a nanostructure of the meta optical device, according to a function to be implemented by the meta optical device;
obtaining a phase change graph with respect to a change in the shape dimensions;
setting a shape dimension region with phase defect in the phase change graph; and
substituting a shape dimension with phase defect, which is included in the shape dimension region with phase defect among the dimensions included in the design data, with a substitution value that is outside the shape dimension region with phase defect.

2. The method of claim 1 , wherein the shape dimension region with phase defect corresponds to a region where a sign of a slope in the phase change graph reverses.

3. The method of claim 2 , wherein a range of a dimension included in the shape dimension region with phase defect is defined by an inequality, DMIN_PD<DR_PD<DMAX_PD, a left region of the shape dimension region with phase defect in the phase change graph is a first normal region, and a right region thereof is a second normal region, wherein “DMIN_PD” is a numeral indicating lower limit of the shape dimension region with phase defect, and “DMAX_PD” is a numeral indicating an upper limit of the shape dimension region with phase defect, and
wherein DMIN_PD and DMAX_PD are determined such that a first sign of a first slope of a straight line connecting two points of the phase change graph respectively corresponding to DMIN_PD and DMAX_PD, a second sign of a first average slope of the phase change graph in the first normal region, and a third sign of a second average slope of the phase change graph in the second normal region are equal to one another.

4. The method of claim 2 , wherein a range of a dimension included in the shape dimension region with phase defect is defined by an inequality, DMIN_PD<DR_PD<DMAX_PD, a left region of the shape dimension region with phase defect in the phase change graph is a first normal region, and a right region thereof is a second normal region, wherein “DMIN_PD” is a numeral indicating a lower limit of the shape dimension region with phase defect, and “DMAX_PD” is a numeral indicating an upper limit of the shape dimension region with phase defect, and
wherein DMIN_PD and DMAX_PD are determined such that a first slope of a straight line connecting two points of the phase change graph respectively corresponding to DMIN_PD and DMAX_PD has a value between a second slope of the phase change graph at DMIN_PD and a third slope of the phase change graph at DMAX_PD.

5. The method of claim 2 , wherein a range of a dimension included in the shape dimension region with phase defect is defined by an inequality, DMIN_PD<DR_PD<DMAX_PD, a left region of the shape dimension region with phase defect in the phase change graph is a first normal region, and a right region thereof is a second normal region, wherein “DMIN_PD” is a numeral indicating a lower limit of the shape dimension region with phase defect, and “DMAX_PD” is a numeral indicating an upper limit of the shape dimension region with phase defect, and
wherein DMIN_PD and DMAX_PD are determined such that a first slope of a straight line connecting two points of the phase change graph respectively corresponding to DMIN_PD and DMAX_PD has a value between a first average slope of the phase change graph in the first normal region and a second average slope of the phase change graph in the second normal region.

6. The method of claim 3 , wherein the substitution value is one of DMIN_PD and DMAX_PD.

7. The method of claim 3 , wherein, a plurality of shape dimension with phase defects are substituted with one selected from DMIN_PD and DMAX_PD.

8. The method of claim 3 , wherein at least one substitution value that is substituting for a plurality of shape dimensions with phase defect is adjusted to DMIN_PD when the at least one shape dimension with phase defect is closer to DMIN_PD than to DMAX_PD, and the at least one substitution value is adjusted to DMAX_PD when the at least one shape dimension with phase defect is closer to DMAX_PD than to DMIN_PD.

9. A meta optical device designed by the method of claim 1 .

10. A meta optical device comprising:
a support layer; and
a plurality of nanostructures provided above the support layer, the plurality of nanostructures being arranged to form a dimension distribution that changes a phase of incident light with a certain regularity based on positions of the plurality of nanostructures, and having dimension values that are less than a wavelength of the incident light,
wherein signs of slopes of a phase change graph showing a phase change of the incident light with respect to the dimension values of the plurality of nanostructures are consistent.

11. The meta optical device of claim 10 , wherein the dimension values of the plurality of nanostructures exclude a value included in a shape dimension region with phase defect extracted from the phase change graph of the incident light with respect to the dimension values.

12. The meta optical device of claim 10 , wherein the dimension values of the plurality of nanostructures exclude a value causing resonance or quasi-resonance with respect to the incident light.

13. The meta optical device of claim 10 , wherein the plurality of nanostructures have at least one of a cylindrical shape and a polygonal column shape, and
wherein the dimension values comprise at least one of a diameter of a cross-sectional circle of a cylinder and a length of one side of a cross-sectional polygon of a polygonal column.

14. The meta optical device of claim 10 , wherein a protrusion height (t) of the plurality of the nanostructures protruding from the support layer satisfies a condition, λ/(2nswg)<t<λ, and
wherein λ is the wavelength of the incident light, and nswg is a refractive index of the plurality of nanostructures.

15. The meta optical device of claim 10 , wherein the phase change of the incident light due to the plurality of nanostructures covers a range of 0 degrees to 360 degrees.

16. The meta optical device of claim 10 , wherein the plurality of nanostructures include one of a dielectric material and a semiconductor material.

17. The meta optical device of claim 10 , wherein a refractive index of the plurality of nanostructures is greater than a refractive index of the support layer.

18. The meta optical device of claim 10 , further comprising a cover layer covering a surface of each of the plurality of nano structures in a form of a shell and having a refractive index that is different from a refractive index of the plurality of nanostructures.

19. The meta optical device of claim 10 , further comprising a cover layer entirely covering the plurality of nanostructures.

20. The meta optical device of claim 18 , wherein the refractive index of the cover layer is substantially equal to a refractive index of the support layer.

21. The meta optical device of claim 18 , further comprising an upper dielectric layer arranged above the cover layer and having a refractive index that is different from the refractive index of the cover layer.

22. The meta optical device of claim 10 , further comprising a lower dielectric layer arranged between the support layer and the plurality of nanostructures.

23. The meta optical device of claim 10 , wherein the plurality of nanostructures com

Assignees

• Samsung Electronics Co Ltd

Inventors

• Baik Chanwook
• Lee Changwon
• Jeong Heejeong
• Kim Jaekwan
• Song Byonggwon
• Lee Jeongyub

Classifications

• G06F30/17

  Mechanical parametric or variational design · CPC title

• G06F30/398

  Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] (optical proximity correction [OPC] design processes G03F1/36) · CPC title

• G06F30/13

  Architectural design, e.g. computer-aided architectural design [CAAD] related to design of buildings, bridges, landscapes, production plants or roads · CPC title

• G06F30/18

  Network design, e.g. design based on topological or interconnect aspects of utility systems, piping, heating ventilation air conditioning [HVAC] or cabling (circuit design at the physical level G06F30/39; network planning tools for wireless communication networks H04W16/18) · CPC title

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title