Translucent conductive substrate for organic light emitting devices
US-9222641-B2 · Dec 29, 2015 · US
US10454071B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10454071-B2 |
| Application number | US-201415036698-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 12, 2014 |
| Priority date | Nov 13, 2013 |
| Publication date | Oct 22, 2019 |
| Grant date | Oct 22, 2019 |
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The present invention relates to a light extraction substrate for an organic light emitting element, a method for manufacturing the same, and an organic light emitting element comprising the same and, more particularly, to a light extraction substrate for an organic light emitting element exhibiting a good light extraction efficiency, a method for manufacturing the same, and an organic light emitting element comprising the same. To this end, the present invention provides a light extraction substrate for an organic light emitting element, a method for manufacturing the same, and an organic light emitting element comprising the same, the light extraction substrate comprising a first light extraction layer having a plurality of pores formed therein and made of a first metal oxide doped with a dopant; and a second light extraction layer formed on the first light extraction layer and made of a second metal oxide which has a different atomic diffusion rate compared to the first metal oxide.
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The invention claimed is: 1. A light extraction substrate for an organic light-emitting device, comprising: a first light extraction layer having a plurality of voids formed therein, the first light extraction layer comprising a first metal oxide and a dopant added to the first metal oxide; and a second light extraction layer disposed on the first light extraction layer, the second light extraction layer comprising a second metal oxide having a different diffusion rate of atoms from the first metal oxide, wherein the diffusion rate of atoms of the first metal oxide is faster than the diffusion rate of atoms of the second metal oxide, and wherein the second light extraction layer is positioned between the first light extraction layer and the organic light-emitting device. 2. The light extraction substrate according to claim 1 , wherein a refractive index of the first metal oxide is greater than a refractive index of the second metal oxide. 3. The light extraction substrate according to claim 1 , wherein the first metal oxide is ZnO, and the second metal oxide is Al 2 O 3 . 4. The light extraction substrate according to claim 3 , wherein the dopant is Ga. 5. The light extraction substrate according to claim 4 , wherein a content of the dopant ranges, by weight, from 4.1% to 11.3% of an amount of the first metal oxide. 6. The light extraction substrate according to claim 1 , wherein the plurality of voids are formed in an inward direction of the first light extraction layer from a boundary between the first light extraction layer and the second light extraction layer. 7. The light extraction substrate according to claim 1 , further comprising a planarization layer disposed on the second light extraction layer. 8. A method of fabricating a light extraction substrate for an organic light-emitting device, comprising: a first light extraction layer forming operation of forming a first light extraction layer, the first light extraction layer comprising a first metal oxide and a dopant added to the first metal oxide; a second light extraction layer forming operation of forming a second light extraction layer, the second light extraction layer comprising a second metal oxide, a diffusion rate of atoms of which is slower than a diffusion rate of atoms of the first metal oxide, wherein the second light extraction layer is positioned between the first light extraction layer and the organic light-emitting device; and a void forming operation of forming a plurality of voids within the first light extraction layer through diffusing atoms by heat-treating the first light extraction layer and the second light extraction layer. 9. The method according to claim 8 , wherein Ga is used as the dopant in the first light extraction layer forming operation. 10. The method according to claim 9 , wherein the first light extraction layer forming operation comprises doping the first metal oxide with the Ga with a content ranging, by weight, 4.1% to 11.3% of an amount of the first metal oxide. 11. The method according to claim 10 , wherein the first light extraction layer forming operation comprises depositing ZnO on a substrate by atmospheric pressure chemical vapor deposition. 12. The method according to claim 11 , wherein the second light extraction layer forming operation comprises depositing Al 2 O 3 on the first light extraction layer by electron beam processing or sputtering. 13. The method according to claim 8 , wherein the void forming operation comprises heat-treating the first light extraction layer and the second light extraction layer in a temperature ranging from 600° C. to 800° C. 14. A light-emitting device comprising the light extraction substrate for an organic light-emitting device as claimed in claim 1 on a path on which light generated thereby is emitted out. 15. A light extraction substrate for an organic light-emitting device, comprising: a first light extraction layer having a plurality of voids formed therein, the first light extraction layer comprising a first metal oxide and a dopant added to the first metal oxide; and a second, non-porous light extraction layer disposed on the first light extraction layer, the second light extraction layer comprising a second metal oxide having a different diffusion rate of atoms from the first metal oxide, wherein the diffusion rate of atoms of the first metal oxide is faster than the diffusion rate of atoms of the second metal oxide, and wherein the second light extraction layer is positioned between the first light extraction layer and the organic light-emitting device.
used in transmission · CPC title
Electricity · mapped topic
Electricity · mapped topic
by means of voids or pores · CPC title
comprising scattering means · CPC title
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