Chemical mechanical polishing device and chemical mechanical polishing method

Patent metadata

Field	Value
Publication number	US-10453702-B2
Application number	US-201715814224-A
Country	US
Kind code	B2
Filing date	Nov 15, 2017
Priority date	Nov 29, 2016
Publication date	Oct 22, 2019
Grant date	Oct 22, 2019

Abstract

The present disclosure describes a chemical mechanical polishing device and a chemical mechanical polishing method. The chemical mechanical polishing device includes: a cleaning apparatus and a polishing pad conditioner disc positionally configurable relative to the cleaning apparatus, where the cleaning apparatus includes: a cleaning disc; a pre-polishing pad disposed inside the cleaning disc and configured to perform a pre-polishing operation of the polishing pad conditioner disc when positioned in contact with the polishing pad conditioner disc; a pre-polishing grinding liquid dispensing assembly disposed on a side edge of the cleaning disc and configured to supply a pre-polishing grinding liquid to the pre-polishing pad; and a rotation driver configured to drive the pre-polishing pad to rotate during the pre-polishing operation. The present disclosure beneficially reduces wafer scratches and increases evenness of distribution of a grinding liquid during polishing.

First claim

What is claimed is:

1. A chemical mechanical polishing device, comprising a cleaning apparatus and a polishing pad conditioner disc positionally configurable relative to the cleaning apparatus, wherein the cleaning apparatus comprises:
a cleaning disc;
a pre-polishing pad disposed inside the cleaning disc and configured to perform a pre-polishing operation of the polishing pad conditioner disc when positioned in contact with the polishing pad conditioner disc;
a pre-polishing grinding liquid dispensing assembly disposed on a side edge of the cleaning disc and configured to supply a pre-polishing grinding liquid to the pre-polishing pad; and
a rotation driver configured to drive the pre-polishing pad to rotate during the pre-polishing operation.

2. The chemical mechanical polishing device according to claim 1 , wherein:
a diameter of the pre-polishing pad ranges between 20 cm and 22 cm.

3. The chemical mechanical polishing device according to claim 1 , wherein:
the pre-polishing pad is fixedly disposed inside the cleaning disc and is coaxial with the cleaning disc; and
the rotation driver is coaxially connected to the cleaning disc.

4. The chemical mechanical polishing device according to claim 3 , wherein:
a rotation speed of the cleaning disc ranges between 15 r/min and 20 r/min.

5. The chemical mechanical polishing device according to claim 1 , wherein:
the pre-polishing grinding liquid dispensing assembly comprises a pre-polishing grinding liquid nozzle disposed on the side edge of the cleaning disc.

6. The chemical mechanical polishing device according to claim 5 , wherein:
the pre-polishing grinding liquid dispensing assembly comprises two pre-polishing grinding liquid nozzles, wherein the two pre-polishing grinding liquid nozzles are respectively disposed on two sides of the cleaning disc.

7. The chemical mechanical polishing device according to claim 1 , wherein:
a flow rate of the pre-polishing grinding liquid ranges between 30 ml/min and 35 ml/min.

8. The chemical mechanical polishing device according to claim 1 , wherein:
in a process of performing the pre-polishing operation, a rotation speed of the polishing pad conditioner disc ranges between 15 r/min and 20 r/min.

9. The chemical mechanical polishing device according to claim 1 , wherein the polishing pad conditioner disc comprises a diamond disc.

10. The chemical mechanical polishing device according to claim 1 , wherein the cleaning apparatus further comprises:
a cleaning liquid dispensing assembly, disposed on the side edge of the cleaning disc and configured to perform a cleaning operation on the polishing pad conditioner disc.

11. The chemical mechanical polishing device according to claim 10 , wherein:
when the cleaning liquid dispensing assembly performs the cleaning operation on the polishing pad conditioner disc, the polishing pad conditioner disc is positioned above the cleaning disc.

12. The chemical mechanical polishing device according to claim 10 , wherein:
the cleaning liquid dispensing assembly comprises a cleaning liquid nozzle disposed on the side edge of the cleaning disc.

13. The chemical mechanical polishing device according to claim 12 , wherein:
the cleaning liquid dispensing assembly comprises two cleaning liquid nozzles respectively disposed on two sides of the cleaning disc.

14. The chemical mechanical polishing device according to claim 12 , wherein:
a flow rate of the cleaning liquid ranges between 100 ml/min and 120 ml/min.

15. The chemical mechanical polishing device according to claim 10 , wherein the cleaning apparatus further comprises:
a liquid discharging disc, disposed below the cleaning disc and configured to discharge a waste liquid after the pre-polishing operation or the cleaning operation.

16. The chemical mechanical polishing device according to claim 10 , further comprising: a rotary disc, a polishing pad, a grinding head, a polishing grinding liquid dispensing assembly, and a polishing pad conditioner arm, wherein:
the rotary disc is configured to drive the polishing pad to rotate;
the polishing pad is disposed on the rotary disc and configured to perform a polishing operation in combination with the grinding head and the polishing pad conditioner disc;
the grinding head is disposed above the polishing pad and configured to hold a wafer and position the wafer into contact with an upper surface of the polishing pad when the polishing operation is performed;
the polishing grinding liquid dispensing assembly is disposed above the polishing pad and configured to supply a polishing grinding liquid to the polishing pad; and
the polishing pad conditioner arm is connected to the polishing pad conditioner disc and configured to move the polishing pad conditioner disc relative to the polishing pad.

17. The chemical mechanical polishing device according to claim 16 , wherein:
a flow rate of the polishing grinding liquid ranges between 140 ml/min and 150 ml/min.

18. A chemical mechanical polishing method, comprising:
transferring, by a polishing pad conditioner arm, a polishing pad conditioner disc to contact a pre-polishing pad fixedly disposed on a cleaning disc to perform a pre-polishing operation;
after the pre-polishing operation is completed, transferring, by the polishing pad conditioner arm, the polishing pad conditioner disc to a polishing pad to perform a polishing operation; and
after the polishing operation is completed, transferring, by the polishing pad conditioner arm, the polishing pad conditioner disc to a position above the cleaning disc not in contact with the pre-polishing pad to perform a cleaning operation.

19. The method according to claim 18 , wherein the pre-polishing operation comprises that:
driving, by a rotation driver, the pre-polishing pad to rotate;
supplying, by a pre-polishing grinding liquid dispensing assembly, a pre-polishing grinding liquid to the pre-polishing pad; and
positioning, by the polishing pad conditioner arm, the polishing pad conditioner disc into contact with an upper surface of the rotating pre-polishing pad to perform the pre-polishing operation.

20. The method according to claim 18 , wherein the polishing operation comprises that:
driving, by a rotary disc, the polishing pad to rotate;
supplying, by a polishing grinding liquid dispensing assembly, a polishing grinding liquid to the polishing pad;
transferring, by the polishing pad conditioner arm, the polishing pad conditioner disc to the polishing pad; and
performing, by the polishing pad, the polishing operation in combination with a grinding head and the polishing pad conditioner disc.

21. The method according to claim 20 , wherein:
in a process of the polishing operation, the polishing pad conditioner arm drives the polishing pad conditioner disc to sweep over an upper surface of the polishing pad, and the grinding head also sweeps over the upper surface of the polishing pad.

22. The method according to claim 18 , wherein the cleaning operation comprises:
spraying, by a cleaning liquid dispensing assembly, a cleaning liquid onto an upper surface and a side face of the polishing pad conditioner disc for cleaning the polishing pad conditioner disc.

23. The method according to claim 18 , further comprising:
cyclically performing the pre-polishing operation, the polishing operation, and the cleaning operation.

Assignees

• Semiconductor Mfg Int Shanghai Corp
• Semiconductor Mfg Int Beijing Corp
• Semiconductor Manf Intl Shanghai Corp
• Semiconductor Manf Intl Beijing Corp

Inventors

• Tang Qiang

Classifications

• H10P52/403 Primary

  of conductive or resistive materials · CPC title

• B24B53/013

  Application of loose grinding agent as auxiliary tool during truing operation · CPC title

• B24B53/017

  Devices or means for dressing, cleaning or otherwise conditioning lapping tools · CPC title

• B24B37/24 Primary

  characterised by the composition or properties of the pad materials · CPC title

• B24B37/042

  operating processes therefor · CPC title