Magnetoresistive effect element, magnetic head, sensor, high-frequency filter, and oscillator

Patent metadata

Field	Value
Publication number	US-10453482-B2
Application number	US-201815988707-A
Country	US
Kind code	B2
Filing date	May 24, 2018
Priority date	May 26, 2017
Publication date	Oct 22, 2019
Grant date	Oct 22, 2019

Abstract

A nonmagnetic spacer layer in a magnetoresistive effect element includes a nonmagnetic metal layer that is formed of Ag and at least one of a first insertion layer that is disposed on a bottom surface of the nonmagnetic metal layer and a second insertion layer that is disposed on a top surface of the nonmagnetic metal layer. The first insertion layer and the second insertion layer include an Fe alloy that is expressed by FeγX1-γ. Here, X denotes one or more elements selected from a group consisting of O, Al, Si, Ga, Mo, Ag, and Au, and γ satisfies 0<γ<1.

First claim

What is claimed is:

1. A magnetoresistive effect element comprising:
a first ferromagnetic layer;
a second ferromagnetic layer; and
a spacer layer that is disposed between the first ferromagnetic layer and the second ferromagnetic layer,
wherein the spacer layer includes:
a nonmagnetic metal layer including Ag, and
at least one of
a first insertion layer that is disposed on a bottom surface of the nonmagnetic metal layer and
a second insertion layer that is disposed on a top surface of the nonmagnetic metal layer, and

wherein the first insertion layer and the second insertion layer include an Fe alloy that is expressed by General Formula (1):
Fe γ X 1-γ   (1),

where X denotes one or more elements selected from a group consisting of O, Al, Si, Ga, Mo, Ag, and Au, and
γ satisfies 0<γ<1,

wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a Heusler alloy that is expressed by General formula (2):
Co 2 L α M β   (2),

where L denotes one or more elements selected from a group consisting of Mn and Fe,
M denotes one or more elements selected from a group consisting of Si, Al, Ga, and Ge,
0.7≤α≤1.6 is satisfied, and
0.65≤β≤1.35, and
wherein α and β in General formula (2) satisfy 2<α+β≤2.55.

2. The magnetoresistive effect element according to claim 1 , wherein γ in General Formula (1) satisfies 0.6 ≤γ≤0.9.

3. The magnetoresistive effect element according to claim 2 , wherein X in General formula (1) is one or more elements selected from a group consisting of Al, Si, and Ga.

4. The magnetoresistive effect element according to claim 3 , wherein α and β in General formula (2) satisfy:
0.85≤α≤1.55, and

0.75≤β≤1.25.

5. The magnetoresistive effect element according to claim 3 , wherein 1<α.

6. The magnetoresistive effect element according to claim 5 ,
wherein 0.2 nm≤t 1 ≤10 nm is satisfied where t 1 denotes a thickness of the first insertion layer, and
wherein 0.2 nm≤t 2 ≤10 nm is satisfied where t 2 denotes a thickness of the second insertion layer.

7. The magnetoresistive effect element according to claim 1 , wherein α and β in General formula (2) satisfy:
0.85≤α≤1.55, and

0.75≤β≤1.25.

8. The magnetoresistive effect element according to claim 1 , wherein 0.2 nm ≤t 1 ≤10 nm is satisfied where t 1 denotes a thickness of the first insertion layer, and
wherein 0.2 nm≤t 2 ≤10 nm is satisfied where t 2 denotes a thickness of the second insertion layer.

9. A magnetic head comprising the magnetoresistive effect element according to claim 1 .

10. A sensor comprising the magnetoresistive effect element according to claim 1 .

11. A high-frequency filter comprising the magnetoresistive effect element according to claim 1 .

12. An oscillator comprising the magnetoresistive effect element according to claim 1 .

13. A magnetoresistive effect element comprising:
a first ferromagnetic layer;
a second ferromagnetic layer; and
a spacer layer that is disposed between the first ferromagnetic layer and the second ferromagnetic layer,
wherein the spacer layer includes:
a nonmagnetic metal layer including Ag, and
at least one of
a first insertion layer that is disposed on a bottom surface of the nonmagnetic metal layer and
a second insertion layer that is disposed on a top surface of the nonmagnetic metal layer,

wherein the first insertion layer and the second insertion layer include an Fe alloy that is expressed by General Formula (1):
Fe γ X 1-γ   (1),

where X denotes one or more elements selected from a group consisting of Al, Ga and Ag, and
γ satisfies 0.6 ≤γ≤0.9,

wherein the first insertion layer is continued from one side to the other side of the magnetoresistive effect element in a transverse direction of the magnetoresistive effect element,
wherein the second insertion layer is continued from one side to the other side of the magnetoresistive effect element in a transverse direction of the magnetoresistive effect element,
wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a Heusler alloy that is expressed by General formula (2):
Co 2 L α M β   (2),

where L denotes one or more elements selected from a group consisting of Mn and Fe,
M denotes one or more elements selected from a group consisting of Si, Al, Ga, and Ge,
1<α,
0.65≤β≤1.35, and
2≤α+β≤2.6.

14. The magnetoresistive effect element according to claim 13 ,
wherein 0.2 nm≤t 1 ≤10 nm is satisfied where t 1 denotes a thickness of the first insertion layer, and
wherein 0.2 nm≤t 2 ≤10 nm is satisfied where t 2 denotes a thickness of the second insertion layer.

15. A magnetoresistive effect element comprising:
a first ferromagnetic layer;
a second ferromagnetic layer; and
a spacer layer that is disposed between the first ferromagnetic layer and the second ferromagnetic layer,
wherein the spacer layer includes:
a nonmagnetic metal layer including Ag, and
at least one of
a first insertion layer that is disposed on a bottom surface of the nonmagnetic metal layer and
a second insertion layer that is disposed on a top surface of the nonmagnetic metal layer,

wherein the first insertion layer and the second insertion layer include an Fe alloy that is expressed by General Formula (1):
Fe γ X 1-γ   (1),

where X denotes one or more elements selected from a group consisting of Mo and Au, and
γ satisfies 0.6≤γ≤0.9, and

wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a Heusler alloy that is expressed by General formula (2):
Co 2 L α M β   (2),

where L denotes one or more elements selected from a group consisting of Mn and Fe,
M denotes one or more elements selected from a group consisting of Si, Al, Ga, and Ge,
0.7≤α1.6,
0.65≤β≤1.35, and
2<α+β≤2.55.

16. The magnetoresistive effect element according to claim 15 , wherein 1<α.

17. The magnetoresistive effect element according to claim 16 ,
wherein 0.2 nm≤t 1 ≤10 nm is satisfied where t 1 denotes a thickness of the first insertion layer, and
wherein 0.2 nm≤t 2 ≤10 nm is satisfied where t 2 denotes a thickness of the second insertion layer.

Assignees

• Tdk Corp

Inventors

• INUBUSHI Kazuumi
• Nakada Katsuyuki

Classifications

• H03H2/00

  Networks using elements or techniques not provided for in groups H03H3/00 - H03H21/00 · CPC title

• H03B15/006

  using spin transfer effects or giant magnetoresistance · CPC title

• G01R33/093

  using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00) · CPC title

• G11B5/3906 Primary

  Details related to the use of magnetic thin film layers or to their effects · CPC title

• G11B5/3133

  including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure (G11B5/3106 takes precedence) · CPC title