Exposure apparatus and method of fabricating semiconductor device using the same

Patent metadata

Field	Value
Publication number	US-10451983-B2
Application number	US-201816122315-A
Country	US
Kind code	B2
Filing date	Sep 5, 2018
Priority date	Feb 23, 2018
Publication date	Oct 22, 2019
Grant date	Oct 22, 2019

Abstract

An exposure apparatus is provided. The exposure apparatus includes a stage for a wafer, a first light source generating a first light beam, an exposure optical system to receive the first light beam and to direct the first light beam as an exposure light beam onto an exposure area in a field of the wafer, and a heating unit including a second light source, which generates second light, and heating the exposure area by applying the second light to the exposure area.

First claim

What is claimed is:

1. An exposure apparatus, comprising:
a stage for a wafer;
a first light source to generate a first light beam;
an exposure optical system to receive the first light beam and to direct the first light beam as an exposure light beam onto an exposure area in a field of the wafer;
a heating unit including a second light source to generate a second light beam to be directed onto the exposure area to heat the exposure area; and
a heating unit controller to control the heating unit based on a heating map generated based on first wafer surface temperature data obtained by performing exposure on the wafer using a first reticle and second wafer surface temperature data obtained by performing exposure on the wafer using a second reticle.

2. The exposure apparatus as claimed in claim 1 , wherein the exposure optical system directs the exposure light beam onto the exposure area and the heating unit heats the exposure area simultaneously.

3. The exposure apparatus as claimed in claim 2 , wherein:
the exposure optical system is to direct the exposure light beam onto the exposure area while moving the exposure area in a first direction within the field, and
the heating unit is to heat the exposure area moving in the first direction.

4. The exposure apparatus as claimed in claim 1 , wherein the heating unit heats the exposure area to which the exposure light beam has already been applied by the exposure optical system.

5. The exposure apparatus as claimed in claim 1 , wherein the first light beam has a different wavelength from the second light beam.

6. The exposure apparatus as claimed in claim 5 , wherein
the first light source is an argon fluoride light source, and
the first light beam has a wavelength of 193 nm.

7. The exposure apparatus as claimed in claim 5 , wherein
the second light beam has a wavelength of 425 nm to 800 nm.

8. The exposure apparatus as claimed in claim 7 , wherein the exposure optical system includes a slit that outputs the exposure light beam as a linear light beam.

9. The exposure apparatus as claimed in claim 1 , wherein the first reticle has a lower transmittance than the second reticle.

10. The exposure apparatus as claimed in claim 1 , wherein the heating unit heats the exposure area when exposure is being performed on the wafer using the first reticle.

11. An exposure apparatus, comprising:
a stage to receive a wafer;
an exposure optical system to apply exposure light to an exposure area in a field of the wafer based on first light of a first wavelength;
a heating unit applying heating light to the field based on second light of a second wavelength, which is longer than the first wavelength; and
a heating unit controller to control the heating unit, wherein the heating unit controller is to:
generate a heating map based on first wafer surface temperature data obtained by performing exposure on the wafer using a first reticle and second wafer surface temperature data obtained by performing exposure on the wafer using a second reticle, and
control the heating unit based on the heating map.

12. The exposure apparatus as claimed in claim 11 , wherein the exposure optical system applies the exposure light to the exposure area, and at the same time, the heating unit applies the heating light to the exposure area.

13. The exposure apparatus as claimed in claim 12 , wherein:
the exposure optical system applies the exposure light while moving the exposure area in a first direction within the field, and
the heating unit applies the heating light along with the exposure light.

14. The exposure apparatus as claimed in claim 11 , wherein the first reticle has a lower transmittance than the second reticle.

15. The exposure apparatus as claimed in claim 11 , wherein the heating unit is to heat the exposure area when exposure is being performed on the wafer using the first reticle.

16. A method of fabricating a semiconductor device, comprising:
loading a wafer on a wafer stage;
directing exposure light having a first wavelength to an exposure area in a field of a wafer; and
applying heating light having a second wavelength, different from the first wavelength, to the exposure area, applying heating light including controlling a dose of heating light in accordance with a heating map based on first wafer surface temperature data obtained by performing exposure on the wafer using a first reticle and second wafer surface temperature data obtained by performing exposure on the wafer using a second reticle.

17. The method as claimed in claim 16 , wherein
the first wavelength is 193 nm, and
the second wavelength is in a UV wavelength band.

18. The method as claimed in claim 16 , wherein the applying the exposure light and the applying the heating light are performed at the same time.

19. The method as claimed in claim 16 , wherein controlling the dose of heating light includes controlling a light source outputting the heating light.

20. The method as claimed in claim 16 , wherein controlling the dose of heating light includes controlling an optical filter between the heating light and the exposure area.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Chang Chan Sam

Classifications

• G03F7/70891

  Temperature · CPC title

• G03F7/70016

  by discharge lamps · CPC title

• G03F7/70633

  Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching · CPC title

• G03F7/2004 Primary

  characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light · CPC title

• G03F7/70875 Primary

  Temperature, e.g. temperature control of masks or workpieces via control of stage temperature · CPC title