Memory devices, components thereof, and related methods and systems
US-2024234483-A9 · Jul 11, 2024 · US
US10450652B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10450652-B2 |
| Application number | US-201715487696-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 14, 2017 |
| Priority date | Apr 14, 2016 |
| Publication date | Oct 22, 2019 |
| Grant date | Oct 22, 2019 |
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A method of forming a carbonized composition includes providing an organic composition, forming a protective layer over the organic composition, increasing temperature to carbonize the organic composition and for a period of time to form the carbonized composition, and removing the protective layer from the carbonized composition.
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What is claimed is: 1. A method of forming a carbonized composition, comprising: providing an organic composition comprising a nucleic acid; forming a protective layer over the organic composition; increasing temperature to carbonize the organic composition and for a period of time to form the carbonized composition; and removing the protective layer from the carbonized composition. 2. The method of claim 1 wherein the organic composition consists of a nucleic acid. 3. The method of claim 1 wherein the nucleic acid is DNA. 4. The method of claim 1 wherein the nucleic acid is formed to have a predetermined shape or conformation. 5. The method of claim 4 wherein the predetermined shape or conformation of the nucleic acid is substantially maintained in the carbonized composition. 6. The method of claim 5 wherein the nucleic acid is deposited upon a substrate before forming the protective layer over the organic composition. 7. The method of claim 1 wherein the carbonized composition is a porous carbon material. 8. The method of claim 1 wherein the temperature is increased to a temperature within the range of approximately 780° C. to approximately 2072° C. 9. The method of claim 1 wherein the protective layer is deposited via a thin film deposition technique. 10. The method of claim 9 wherein the protective layer is deposited via atomic layer deposition, vacuum deposition, sputtering, chemical vapor deposition or laser assisted deposition. 11. The method of claim 10 wherein the protective layer is deposited via atomic layer deposition. 12. The method of claim 9 wherein the thickness of the protective layer is in the range of 2 nm to 100 micrometers. 13. The method of claim 1 wherein the protective layer comprises Al 2 O 3 . 14. The method of claim 13 wherein the protective layer is removed via etching with H 3 PO 4 . 15. The method of claim 1 wherein the protective layer is impermeable to decomposition gases of the organic composition during carbonization.
obtained by TEM, STEM, STM or AFM · CPC title
by IR- or Raman-data · CPC title
Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30 · CPC title
Carbides · CPC title
of aluminium, magnesium or beryllium · CPC title
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