High-molecular-weight polysilane and method for producing same

Patent metadata

Field	Value
Publication number	US-10450419-B2
Application number	US-201515326632-A
Country	US
Kind code	B2
Filing date	Jun 30, 2015
Priority date	Jul 16, 2014
Publication date	Oct 22, 2019
Grant date	Oct 22, 2019

Abstract

There is provided a highly conductive and good silicon thin film which is obtained by applying a coating-type polysilane composition prepared by use of a polysilane having a large weight average molecular weight to a substrate, followed by baking. A polysilane having a weight average molecular weight of 5,000 to 8,000. The polysilane may be a polymer of cyclopentasilane. A silicon film obtained by applying a polysilane composition in which the polysilane is dissolved in a solvent to a substrate, and baking the substrate at 100° C. to 425° C. The cyclopentasilane may be polymerized in the presence of a palladium catalyst supported on a polymer. The palladium catalyst supported on a polymer may be a catalyst in which palladium as a catalyst component is immobilized on a functional polystyrene. The palladium may be a palladium compound or a palladium complex. The palladium-immobilized catalyst may be formed by microencapsulating a zero-valent palladium complex or a divalent palladium compound with a functional polystyrene. The zero-valent palladium complex may be a tetrakis(triphenylphosphine)palladium (0) complex.

First claim

The invention claimed is:

1. A method for producing a polymer of cyclopentasilane, comprising polymerizing the cyclopentasilane in the presence of a palladium catalyst comprises a zero-valent palladium complex or a divalent palladium compound microencapsulated with functional polystyrene.

2. The method according to claim 1 , wherein the palladium catalyst microencapsulated with the functional polystyrene comprises the divalent palladium compound bonded to the functional polystyrene.

3. The method according to claim 1 , wherein the functional polystyrene comprises a polystyrene having a polyethylene oxide group with a hydroxy group at a terminal thereof or a polystyrene having a diphenylphosphino group.

4. The method according to claim 1 , wherein the method further comprises: reacting a cyclic silane of Formula (1):
(SiR 1 R 2 ) n   (1)

wherein R 1 and R 2 are each a hydrogen atom, a C 1-6 alkyl group, or a substituted or unsubstituted phenyl group (provided that both R 1 and R 2 are not simultaneously hydrogen atoms), and n is an integer of 4 to 6, with a hydrogen halide in an organic solvent in a presence of an aluminum halide to obtain a cyclic silane of Formula (2):
(SiR 3 R 4 ) n   (2)

wherein R 3 and R 4 are each a halogen atom, and n is an integer of 4 to 6, and reducing the cyclic silane of Formula (2) with hydrogen or lithium aluminum hydride to obtain a cyclic silane of Formula (3):
(SiH 2 ) n   (3)

wherein n is an integer of 4 to 6, and the cyclic silane of Formula (3) includes the cyclopentasilane.

5. The method according to claim 4 , wherein both R 1 and R 2 are phenyl groups.

6. The method according to claim 4 , wherein both R 3 and R 4 are chlorine atoms.

7. The method according to claim 4 , wherein the cyclic silane of Formula (3) contains the cyclopentasilane in an amount of 80% or more by moles.

8. The method according to claim 1 , wherein the palladium catalyst comprises the zero-valent palladium complex.

9. The method according to claim 8 , wherein the zero-valent palladium complex is a tetrakis(triphenylphosphine)palladium (0) complex.

10. A method for producing a polymer of cyclopentasilane, comprising polymerizing the cyclopentasilane in the presence of a palladium catalyst supported on a polystyrene having a polyethylene oxide group with a hydroxy group at a terminal thereof or a polystyrene having a diphenylphosphino group.

11. The method according to claim 10 , wherein the palladium catalyst comprises a divalent palladium compound.

12. The method according to claim 10 , wherein the palladium catalyst comprises a zero-valent palladium complex.

13. The method according to claim 12 , wherein the zero-valent palladium complex is a tetrakis(triphenylphosphine)palladium (0) complex.

14. A method for producing a polymer of cyclopentasilane, comprising:
reacting a cyclic silane of Formula (1):
(SiR 1 R 2 ) n   (1)

wherein R 1 and R 2 are each a hydrogen atom, a C 1-6 alkyl group, or a substituted or unsubstituted phenyl group (provided that both R 1 and R 2 are not simultaneously hydrogen atoms), and n is an integer of 4 to 6, with a hydrogen halide in an organic solvent in a presence of an aluminum halide to obtain a cyclic silane of Formula (2):
(SiR 3 R 4 ) n   (2)

wherein R 3 and R 4 are each a halogen atom, and n is an integer of 4 to 6;
reducing the cyclic silane of Formula (2) with hydrogen or lithium aluminum hydride to obtain a cyclic silane of Formula (3):
(SiH 2 ) n   (3)

wherein n is an integer of 4 to 6; and
polymerizing the cyclic silane of Formula (3) in the presence of a palladium catalyst supported on a polymer, wherein the cyclic silane of Formula (3) includes the cyclopentasilane.

15. The method according to claim 14 , wherein both R 1 and R 2 are phenyl groups.

16. The method according to claim 15 , wherein both R 3 and R 4 are chlorine atoms.

17. The method according to claim 14 , wherein the cyclic silane of Formula (3) contains the cyclopentasilane in an amount of 80% or more by moles.

18. The method according to claim 14 , wherein the functional polystyrene comprises a polystyrene having a polyethylene oxide group with a hydroxy group at a terminal thereof or a polystyrene having a diphenylphosphino group.

19. The method according to claim 18 , wherein the palladium catalyst comprises a divalent palladium compound.

20. The method according to claim 18 , wherein the palladium catalyst comprises a zero-valent palladium compound.

Assignees

• Thin Film Electronics Asa

Inventors

• Endo Masahisa
• Son Gun
• Goto Yuichi
• Nagai Kentaro

Classifications

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• C01B33/02

  Silicon (forming single crystals or homogeneous polycrystalline material with defined structure C30B) · CPC title

• C03C17/22

  with other inorganic material (C03C17/34, C03C17/44 take precedence) · CPC title

• B05D3/0254

  After-treatment · CPC title

• C09D183/16

  in which all the silicon atoms are connected by linkages other than oxygen atoms · CPC title