Quantum dot device and electronic device

Patent metadata

Field	Value
Publication number	US-10446781-B2
Application number	US-201816001227-A
Country	US
Kind code	B2
Filing date	Jun 6, 2018
Priority date	Nov 21, 2017
Publication date	Oct 15, 2019
Grant date	Oct 15, 2019

Abstract

A quantum dot device includes an anode, a hole injection layer on the anode, a hole transport layer on the hole injection layer, a quantum dot layer on the hole transport layer, and a cathode on the quantum dot layer, wherein a highest occupied molecule orbital (HOMO) energy level of the quantum dot layer is greater than or equal to about 5.6 electronvolts (eV), a difference between a HOMO energy level of the hole transport layer and the highest occupied molecule orbital energy level of the quantum dot layer is less than about 0.5 eV, the hole injection layer has a first surface contacting the anode and a second surface contacting the hole transport layer, and a HOMO energy level of the first surface of the hole injection layer is different from a HOMO energy level of the second surface of the hole injection layer.

First claim

What is claimed is:

1. A quantum dot device, comprising an anode,
a hole injection layer on the anode,
a hole transport layer on the hole injection layer,
a quantum dot layer on the hole transport layer, and
a cathode on the quantum dot layer, wherein
the hole injection layer is a single-layer having a first surface contacting the anode and a second surface contacting the hole transport layer,
a highest occupied molecule orbital energy level of the first surface of the hole injection layer is different from a highest occupied molecule orbital energy level of the second surface of the hole injection layer, and
a difference between the highest occupied molecule orbital energy level of the second surface of the hole injection layer and the highest occupied molecule orbital energy level of the hole transport layer is less than about 0.5 electronvolts.

2. The quantum dot device of claim 1 , wherein the highest occupied molecule orbital energy level of the second surface of the hole injection layer is greater than the highest occupied molecule orbital energy level of the first surface of the hole injection layer.

3. The quantum dot device of claim 1 , wherein the highest occupied molecule orbital energy level of the hole transport layer is greater than or equal to about 5.4 electronvolts.

4. The quantum dot device of claim 1 , wherein the highest occupied molecule orbital energy level of the hole transport layer is about 5.6 electronvolts to about 7 electronvolts.

5. The quantum dot device of claim 1 , wherein the highest occupied molecule orbital energy level of the quantum dot layer is about 5.6 electronvolts to about 7 electronvolts.

6. The quantum dot device of claim 1 , wherein the quantum dot layer comprises a cadmium-free quantum dot.

7. The quantum dot device of claim 1 , wherein the quantum dot layer comprises a quantum dot having a core-shell structure.

8. The quantum dot device of claim 7 , wherein the quantum dot comprises a core comprising zinc, tellurium, and selenium and a shell on at least one part of the core, the shell having a different composition from that of the core.

9. The quantum dot device of claim 8 , wherein the shell comprises ZnSeS, ZnS, or a combination thereof.

10. An electronic device comprising the quantum dot device of claim 1 .

11. A quantum dot device, comprising
an anode,
a hole injection layer on the anode,
a hole transport layer on the hole injection layer,
a quantum dot layer on the hole transport layer, and
a cathode on the quantum dot layer,
wherein the hole injection layer is a single-layer having a first surface contacting the anode and a second surface contacting the hole transport layer,
a highest occupied molecule orbital energy level of the first surface of the hole injection layer is different from a highest occupied molecule orbital energy level of the second surface of the hole injection layer,
the highest occupied molecule orbital energy level of the first surface of the hole injection layer is about 5.0 electronvolts to about 5.5 electronvolts, and
the highest occupied molecule orbital energy level of the second surface of the hole injection layer is greater than about 5.5 electronvolts and less than or equal to about 7 electronvolts.

12. A quantum dot device, comprising
an anode,
a hole injection layer on the anode,
a hole transport layer on the hole injection layer,
a quantum dot layer on the hole transport layer, and
a cathode on the quantum dot layer,
wherein the hole injection layer is a single-layer having a first surface contacting the anode and a second surface contacting the hole transport layer,
a highest occupied molecule orbital energy level of the first surface of the hole injection layer is different from a highest occupied molecule orbital energy level of the second surface of the hole injection layer, and
the hole injection layer comprises a first compound and a second compound, the second compound having a higher highest occupied molecule orbital energy level than the first compound and a surface energy less than a surface energy of the first compound.

13. The quantum dot device of claim 12 , wherein
the first compound comprises a conductive polymer, and
the second compound comprises an insulating polymer.

14. The quantum dot device of claim 12 , wherein a weight ratio of the second compound to the first compound at the second surface of the hole injection layer is greater than a weight ratio of the second compound to the first compound at the first surface of the hole injection layer.

15. The quantum dot device of claim 12 , wherein a weight ratio of the second compound to the first compound is gradually increased from the first surface of the hole injection layer to the second surface of the hole injection layer.

16. The quantum dot device of claim 12 , wherein the second compound is present in a greater amount than the first compound.

17. The quantum dot device of claim 16 , wherein a weight ratio of the first compound to the second compound is about 1:1.1 to about 1:10.

18. The quantum dot device of claim 12 , wherein the first compound comprises polythiophene, polyaniline, polypyrrole, poly(para-phenylene), polyfluorene, poly(3,4-ethylenedioxythiophene), a derivative thereof, or a combination thereof.

19. The quantum dot device of claim 12 , wherein the second compound comprises a fluorine-containing polymer.

20. A quantum dot device, comprising
an anode and a cathode facing each other,
a quantum dot layer between the anode and the cathode, and
a hole injection layer between the anode and the quantum dot layer,
wherein the hole injection layer has a first surface contacting the anode and a second surface facing the first surface,
the hole injection layer comprises a first compound and a second compound, the second compound having a higher highest occupied molecule orbital energy level than the first compound and a surface energy less than a surface energy of the first compound,
the second compound is present in a greater amount than the first compound, and
a weight ratio of the second compound to the first compound at the first surface of the hole injection layer is different from a weight ratio of the second compound to the first compound at the second surface of the hole injection layer.

21. The quantum dot device of claim 20 , wherein
the first compound comprises a conductive polymer, and
the second compound comprises an insulating polymer.

22. The quantum dot device of claim 20 , wherein a weight ratio of the second compound to the first compound at the second surface of the hole injection layer is greater than a weight ratio of the second compound to the first compound at the first surface of the hole injection layer.

23. The quantum dot device of claim 20 , wherein a weight ratio of the first compound to the second compound is about 1:1.1 to about 1:10.

24. The quantum dot device of claim 20 , further comprising a hole transport layer between the hole injection layer and the quantum dot layer,
wherein the highest occupied molecule orbital energy level of the hole transport layer is greater than or equal to about 5.4 electronvolts.

25. The quantum dot device of claim 24 , wherein the highest occupied molecule orbital energy level of the hole transport layer is about 5.6 electronvolts to about 7 electronvolts.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Seo Hongkyu
• Jang Eun Joo
• Chung Dae Young
• Kim Tae-Ho
• Lee Sang Jin

Classifications

• B82Y30/00

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title

• H01L51/5221

  Electricity · mapped topic

• H01L51/5206

  Electricity · mapped topic

• H01L51/502 Primary

  Electricity · mapped topic