Two-dimensional layered material quantum well junction devices

Patent metadata

Field	Value
Publication number	US-10446705-B2
Application number	US-201515507621-A
Country	US
Kind code	B2
Filing date	Jul 30, 2015
Priority date	Aug 28, 2014
Publication date	Oct 15, 2019
Grant date	Oct 15, 2019

Abstract

A quantum well device includes a first layer of a first two-dimensional material, a second layer of a second two-dimensional material, and a third layer of a third two-dimensional material disposed between the first layer and second layer. The first layer, the second layer, and the third layer are adhered predominantly by van der Waals force.

First claim

What is claimed is:

1. A quantum well device, comprising:
a quantum well that comprises:
a first layer of a first two-dimensional material;
a second layer of a second two-dimensional material;
a third layer of a third two-dimensional material disposed between the first layer and second layer;
a first metal contact; and
a second metal contact,
wherein the first layer, the second layer, and the third layer are adhered predominantly by van der Waals force,
wherein a bias voltage, applied between the first metal contact and the second metal contact across a thickness of the third layer, shifts a quantized allowed energy level of the third layer to align with a conduction band of the third layer to:
absorb photons of a predetermined energy level, and
generate a photocurrent between the first metal contact and the second metal contact.

2. The quantum well device according to claim 1 , wherein the first two-dimensional material is doped to be an n-type semiconductor.

3. The quantum well device according to claim 1 , wherein the second two-dimensional material is doped to be a p-type semiconductor.

4. The quantum well device according to claim 1 , wherein the third layer comprises a plurality of sub-layers of the third two-dimensional material, and each of the sub-layers of the plurality of sub-layers is adhered predominantly by van der Walls force.

5. The quantum well device according to claim 4 , wherein a bandgap of the third layer is smaller than a bandgap of the first and the second layers and is adjustable by varying a number of the sub-layers of the third layer.

6. A multi-well quantum well device, comprising at least one quantum well device according to claim 1 .

Assignees

• Konica Minolta Laboratory Usa Inc

Inventors

• Amano Jun

Classifications

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/3402

  characterised by the chemical composition · CPC title

• H10P14/3248

  consisting of two layers · CPC title

• H10P14/3246

  Monolayers · CPC title

• H10P14/3236

  being chalcogenide semiconducting materials not being oxides, e.g. ternary compounds · CPC title