Method of production of semiconductor device

Patent metadata

Field	Value
Publication number	US-10446690-B2
Application number	US-201415039335-A
Country	US
Kind code	B2
Filing date	Nov 25, 2014
Priority date	Nov 28, 2013
Publication date	Oct 15, 2019
Grant date	Oct 15, 2019

Abstract

A method of production of a semiconductor device comprising a semiconductor layer forming step of forming a semiconductor layer including an inorganic oxide semiconductor on a board, a passivation film forming step of forming a passivation film comprising an organic material so as to cover the semiconductor layer, a baking step of baking the passivation film, and a cooling step of cooling the passivation film after baking, herein, in the cooling step, a cooling speed from a baking temperature at the time of baking in the baking step to a temperature 50° C. lower than the baking temperature is substantially controlled to 0.5 to 5° C./min in range is provided.

First claim

The invention claimed is:

1. A method of production of a semiconductor device comprising a semiconductor layer forming step of forming a semiconductor layer including an inorganic oxide semiconductor on a board,
a step of forming a source electrode and a drain electrode on the board that is formed with the semiconductor layer,
a passivation film forming step of forming a passivation film consisting of an organic material so as to cover entire exposed surfaces of the semiconductor layer, source electrode and the drain electrode after forming the source electrode and the drain electrode,
a baking step of baking the passivation film, wherein the baking temperature in the baking step is 200 to 300° C., and
a cooling step of cooling the passivation film after baking, wherein, in the cooling step, a cooling speed from a baking temperature at the time of baking in the baking step to a temperature 50° C. lower than the baking temperature is substantially controlled to 0.5 to 3° C./min in range.

2. The method of production of a semiconductor device according to claim 1 wherein, in the cooling step, a cooling speed from the baking temperature at the baking step to 150° C. is substantially controlled to 0.5 to 3° C./min in range.

3. The method of production of a semiconductor device according to claim 1 wherein the baking in the baking step and the cooling in the cooling step is performed in a non-oxidizing atmosphere.

4. The method of production of a semiconductor device according to claim 1 wherein the passivation film is formed using a resin composition containing at least one type of resin selected from a group consisting of a cyclic olefin resin, acrylic resin, cardo resin, polysiloxane resin, and polyimide resin.

5. The method of production of a semiconductor device according to claim 4 wherein the passivation film is formed using a resin composition containing a cyclic olefin resin having a protonic polar group.

6. The method of production of a semiconductor device according to claim 5 wherein the resin composition further contains an alkoxysilyl group containing (meth)acrylate compound, tetrafunctional or higher functional (meth)acrylate compound, photopolymerization initiator, and cross-linking agent.

7. A semiconductor device obtained by the method according to claim 1 .

8. The method of production of a semiconductor device according to claim 1 , the method further comprising a pre-baking step prior to the baking step.

Assignees

• Univ Tohoku
• Zeon Corp

Inventors

• Goto Tetsuya
• Takeshita Makoto

Classifications

• C08G2261/77

  grafting · CPC title

• C08F283/14

  on to polymers obtained by ring-opening polymerisation of carbocyclic compounds having one or more carbon-to-carbon double bonds in the carbocyclic ring, i.e. polyalkeneamers {(C08F283/004 takes precedence)} · CPC title

• C08F220/10

  Esters · CPC title

• C08K5/5425

  containing at least one C=C bond · CPC title

• C08L33/08

  Homopolymers or copolymers of acrylic acid esters · CPC title