Near-field imaging devices

Patent metadata

Field	Value
Publication number	US-10440244-B2
Application number	US-201515313954-A
Country	US
Kind code	B2
Filing date	May 26, 2015
Priority date	May 27, 2014
Publication date	Oct 8, 2019
Grant date	Oct 8, 2019

Abstract

Imaging apparatus (26) includes an image sensor (30), configured to capture an image of radiation at a target wavelength that is incident on a front surface of the image sensor. A metasurface (28) having a negative permittivity and a negative permeability at the target wavelength is fixed to the front surface of the image sensor.

First claim

The invention claimed is:

1. Imaging apparatus, comprising:
an image sensor, configured to capture an image of radiation at a target wavelength that is incident on a front surface of the image sensor; and
a metasurface comprising a two-dimensional pattern of repeating structures, having a pitch and thickness that are less than the target wavelength of the radiation, directly fixed to the front surface of the image sensor and having a negative permittivity and a negative permeability at the target wavelength.

2. The apparatus according to claim 1 , wherein the image sensor comprises an array of sensing elements.

3. The apparatus according to claim 2 , wherein the image sensor comprises a substrate, and wherein the array of sensing elements and the metasurface are formed as successive layers on the substrate by a microfabrication process.

4. The apparatus according to claim 1 , wherein the metasurface has a given thickness and is configured to form on the image sensor an image of an external focal plane at a distance from the metasurface that is equal to the thickness.

5. The apparatus according to claim 4 , wherein the image sensor is configured to capture the image of a sample at the external focal plane, and wherein the apparatus comprises a motion assembly, which is configured to adjust a position of the focal plane on the sample.

6. The apparatus according to claim 1 , wherein the metasurface is configured to form on the image sensor an image of an external focal plane without any other element between the external focal plane and the metasurface.

7. The apparatus according to claim 6 , wherein the metasurface is configured to form the image with a resolution that is finer than the diffraction limit at the target wavelength.

8. Imaging apparatus, comprising:
an image generator, which has a front surface and is configured to generate patterned radiation at a target wavelength at the front surface; and
a metasurface comprising a two-dimensional pattern of repeating structures, having a pitch and thickness that are less than the target wavelength of the radiation, directly fixed to the front surface of the image generator and having a negative permittivity and a negative permeability at the target wavelength.

9. The apparatus according to claim 8 , wherein the image generator comprises an array of radiation emitters.

10. The apparatus according to claim 8 , wherein the image generator comprises a mask in which a pattern is formed, and a radiation source configured to back-illuminate the pattern.

11. The apparatus according to claim 8 , wherein the metasurface has a given thickness and is configured to form an image of the patterned radiation at an external focal plane at a distance from the metasurface that is equal to the thickness.

12. The apparatus according to claim 11 , and comprising a motion assembly, which is configured to adjust a position of the focal plane on a substrate so that the patterned radiation writes a pattern on the substrate.

13. The apparatus according to claim 8 , wherein the metasurface is configured to form an image of the patterned radiation on a substrate at an external focal plane without any other element between the metasurface and the substrate.

14. The apparatus according to claim 13 , wherein the metasurface is configured to form the image with a resolution that is finer than the diffraction limit at the target wavelength.

15. A method for imaging, comprising:
fixing a metasurface, comprising a two-dimensional pattern of repeating structures, having a pitch and thickness that are less than the target wavelength of the radiation and having a negative permittivity and a negative permeability at a target wavelength, directly to a front surface of an image sensor; and
using the metasurface, focusing radiation at the target wavelength from an object onto the image sensor so as to capture an image of the object.

16. The method according to claim 15 , wherein the image sensor comprises an array of sensing elements.

17. The method according to claim 16 , wherein fixing the metasurface comprises forming the array of sensing elements and the metasurface as successive layers on a substrate by a microfabrication process.

18. The method according to claim 15 , wherein the metasurface has a given thickness, and wherein focusing the radiation comprises forming the image of an external focal plane located at a distance from the metasurface that is equal to the thickness.

19. The method according to claim 18 , wherein forming the image comprises forming images at multiple focal depths within the sample.

20. The method according to claim 15 , wherein focusing the radiation comprises forming the image on the image sensor using the metasurface without any other element between the object and the metasurface.

21. The method according to claim 20 , wherein the image is formed with a resolution that is finer than the diffraction limit at the target wavelength.

22. The method according to claim 15 , wherein the object comprises a patterned semiconductor wafer.

23. The method according to claim 15 , wherein the object comprises a living biological sample.

24. A method for imaging, comprising:
fixing a metasurface, comprising a two-dimensional pattern of repeating structures, having a pitch and thickness that are less than the target wavelength of the radiation and having a negative permittivity and a negative permeability at a target wavelength, directly to a front surface of an image generator; and
using the metasurface, focusing patterned radiation at the target wavelength from the image generator onto an object.

25. The method according to claim 24 , wherein the image generator comprises an array of radiation emitters.

26. The method according to claim 24 , wherein the image generator comprises a mask in which a pattern is formed, and wherein focusing the patterned radiation comprises back-illuminating the pattern in order to create the patterned radiation.

27. The method according to claim 24 , wherein the metasurface has a given thickness, and wherein focusing the patterned radiation comprises forming an image of the patterned radiation at an external focal plane at a distance from the metasurface that is equal to the thickness.

28. The method according to claim 24 , wherein focusing the patterned radiation comprises forming an image of the patterned radiation on the object using the metasurface without any other element between the metasurface and the object.

29. The method according to claim 28 , wherein the image is formed with a resolution that is finer than the diffraction limit at the target wavelength.

30. The method according to claim 24 , wherein focusing the patterned radiation comprises writing a pattern on the object using the patterned radiation.

31. The method according to claim 30 , wherein the object comprises a semiconductor substrate, and wherein writing the pattern comprises forming the pattern on the semiconductor substrate by photolithography.

Assignees

• Technion Res & Dev Foundation

Inventors

• Rosenblatt Gilad
• Orenstein Meir

Classifications

• H04N25/76

  Addressed sensors, e.g. MOS or CMOS sensors · CPC title

• H04N5/378

  Electricity · mapped topic

• H04N5/2254 Primary

  Electricity · mapped topic

• H04N5/376

  Electricity · mapped topic

• H04N5/374

  Electricity · mapped topic