Composite structure for controlling absorptivity of radar and emissivity of infrared regions

Patent metadata

Field	Value
Publication number	US-10439294-B2
Application number	US-201715452820-A
Country	US
Kind code	B2
Filing date	Mar 8, 2017
Priority date	Sep 2, 2016
Publication date	Oct 8, 2019
Grant date	Oct 8, 2019

Abstract

A technique of adjusting absorptivity of radar waves and emissivity of infrared waves by controlling the waves of the radar and infrared regions using a structure formed of a meta-material. A composite structure for controlling absorptivity and emissivity includes: a first anti-detection unit; and a second anti-detection unit stacked on the first anti-detection unit, wherein the first anti-detection unit is an absorber for absorbing electromagnetic waves of a first range input from an outside of the first anti-detection unit, and the second anti-detection unit is a selective emitter for selectively blocking emission of electromagnetic waves of a second range and selectively allowing emission of electromagnetic waves of a third range among electromagnetic waves that can be emitted to an outside of the second anti-detection unit.

First claim

What is claimed is:

1. A composite structure for controlling absorptivity and emissivity, the structure comprising:
a first anti-detection unit stacked on an anti-detection target object; and
a second anti-detection unit stacked on the first anti-detection unit,
wherein the first anti-detection unit is an absorber for absorbing a first wavelength range of electromagnetic waves input from an outside of the first anti-detection unit,
wherein the second anti-detection unit is a selective emitter for selectively blocking emission of a second wavelength range of electromagnetic waves and selectively allowing emission of a third wavelength range of electromagnetic waves, from among electromagnetic waves that can be emitted to an outside of the second anti-detection unit,
wherein the first anti-detection unit absorbs a radar wavelength region of electromagnetic waves, and the second anti-detection unit selectively emits an infrared wavelength region of electromagnetic waves,
wherein the first anti-detection unit has a thickness in millimeters and the second anti-detection unit has a thickness in nanometers so that the radar wavelength region of electromagnetic waves can pass through the second anti-detection unit,
wherein the first anti-detection unit is formed of a stack of a first base layer, a first dielectric, an electromagnetic wave shield layer, a second dielectric and a first metal layer,
wherein the first metal layer is made of a plurality of unit metal blocks of a same shape which are arranged on the second dielectric and spaced apart from each other by a distance of each of slits formed between the plurality of unit metal blocks, and
wherein the radar wavelength region of electromagnetic waves absorbed by the first anti-detection unit is determined according to the distance of each of the slits formed on the first metal layer or a thickness of the first metal layer.

2. The structure according to claim 1 , wherein:
the third wavelength range of electromagnetic waves indicates wavelengths corresponding to a part of a wavelength region of several to tens of micrometers, and
the second wavelength range of electromagnetic waves indicates wavelengths other than the third wavelength range of electromagnetic waves.

3. The structure according to claim 2 , wherein:
the third wavelength range of electromagnetic waves indicates wavelengths larger than 5 μm and smaller than 8 μm, and
the second wavelength range of electromagnetic waves wavelengths larger than or equal to 3 μm and smaller than or equal to 5 μm or larger than or equal to 8 μm and smaller than or equal to 12 μm.

4. The structure according to claim 1 , wherein the first metal layer has a same configuration as a base layer of the second anti-detection unit, and the base layer of the second anti-detection unit is replaced with the first metal layer.

5. The structure according to claim 1 , wherein the second anti-detection unit is formed of a stack of a second base layer, a third dielectric and a second metal layer.

6. The structure according to claim 5 , wherein the second metal layer is made of a plurality of unit metal blocks of a same shape which are arranged on the third dielectric.

7. The structure according to claim 6 , wherein the plurality of unit metal blocks are spaced apart from each other to form a certain pattern.

8. The structure according to claim 6 , wherein:
a wavelength of the second wavelength range of electromagnetic waves varies according to change of a diameter of the unit metal blocks of the second metal layer, and
an emission amount of the second wavelength range of electromagnetic waves varies according to change of thickness of the third dielectric.

Assignees

• Univ Yonsei Iacf

Inventors

• Cho Hyung Hee
• Kim Taehwan
• Lee Hwanseong
• BAE Ji-Yeul
• Lee Namkyu
• Kim Taeil

Classifications

• G01J5/20

  using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices · CPC title

• B32B15/04

  comprising metal as the main or only constituent of a layer, {which is} next to another layer of {the same or of} a {different material (next to a bituminous or tarry layer B32B11/08; next to a water-setting substance layer B32B13/06; next to a glass layer B32B17/061; next to a cellulosic plastic layer B32B23/042)} · CPC title

• B32B27/38

  comprising epoxy resins · CPC title

• B32B3/14

  characterised by a face layer formed of separate pieces of material {which are juxtaposed side-by-side (B32B5/02 takes precedence)} · CPC title

• B32B2571/00

  Protective equipment · CPC title