Power semiconductor module and power conversion device
US-2015023081-A1 · Jan 22, 2015 · US
US10438874B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10438874-B2 |
| Application number | US-201815881883-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 29, 2018 |
| Priority date | Sep 29, 2017 |
| Publication date | Oct 8, 2019 |
| Grant date | Oct 8, 2019 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
To obtain a compact and high output power conversion device by achieving high heat dispersion performance and a reduction in heat generation, and enabling an efficient arrangement of power modules of three-phase circuits, four switchable power semiconductor chips of each of the power modules are arranged so that two pairs of circuits for one phase connected in series are connected in parallel to form a circuit for two phases, the lead frame includes two positive potential leads, two AC potential leads, and one negative potential lead that are separated from each other, the four switchable power semiconductor chips are individually arranged on four leads of the two positive potential leads and the two AC potential leads, the two positive potential leads each have an end portion connected to a bus bar via a welding point individually provided for each phase, and the bus bar is provided in common.
Opening claim text (preview).
What is claimed is: 1. A power conversion device, comprising: two three-phase circuits for electric power conversion in parallel, the two three-phase circuits including a combination of three power modules each including: four switchable power semiconductor chips; and a lead frame on which the four switchable power semiconductor chips are mounted, wherein the four switchable power semiconductor chips of each of the three power modules are arranged so that a first pair of the four switchable power semiconductor chips for one first phase are connected in series, a second pair of the four switchable power semiconductor chips for one second phase are connected in series, and the first pair of the four switchable power semiconductor chips and the second pair of the four switchable power semiconductor chips are connected in parallel, wherein the lead frame includes two positive potential leads, two AC potential leads, and one negative potential lead that are separated from each other, wherein the four switchable power semiconductor chips are respectively arranged on the two positive potential leads and the two AC potential leads, wherein each of the two positive potential leads includes an end portion connected to a bus bar via a welding point that is individually provided for a respective one of the one first phase and the one second phase, and wherein the bus bar is provided in common between the three power modules. 2. The power conversion device according to claim 1 , wherein each of the three power modules includes a mold encapsulation power module in which the four switchable power semiconductor chips, the two positive potential leads, the two AC potential leads, and the one negative potential lead are encapsulated with a mold resin, wherein surfaces of the two positive potential leads, surfaces of the two AC potential leads, and a surface of the one negative potential lead are covered with the mold resin, and wherein the lead frame includes, on a surface opposite to a surface on which the four switchable power semiconductor chips are mounted, a region that is prevented from being encapsulated with the mold resin, and is connected to a heat sink via an insulating member containing an insulating filler. 3. The power conversion device according to claim 2 , wherein the insulating member is made of a material having a heat conductivity and a specific heat that are higher than a heat conductivity and a specific heat of the mold resin. 4. The power conversion device according to claim 1 , wherein the bus bar, to which the two positive potential leads are welded, has a sheet thickness that is 1.4 times or more as large as a sheet thickness of the two positive potential leads. 5. The power conversion device according to claim 1 , further comprising a control board arranged above the three power modules. 6. The power conversion device according to claim 1 , wherein the bus bar has a shape forming three sides of a rectangular shape, and wherein each of the three power modules are arranged on a respective one of the three sides of an outer periphery of the bus bar. 7. The power conversion device according to claim 1 , further comprising a smoothing capacitor connected between a positive potential and a negative potential of each of the three power modules, wherein the smoothing capacitor is arranged in a space between the three power modules, on a heat sink on which the three power modules are mounted.
between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title
the semiconductor body being only partially enclosed · CPC title
Encapsulations, e.g. protective coatings · CPC title
Multiple chips on leadframes · CPC title
by a substrate and the encapsulations · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.