Semiconductor module, semiconductor device, and vehicle
US-2016111345-A1 · Apr 21, 2016 · US
US10438865B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10438865-B2 |
| Application number | US-201615778635-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 4, 2016 |
| Priority date | Feb 4, 2016 |
| Publication date | Oct 8, 2019 |
| Grant date | Oct 8, 2019 |
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Official abstract text for this publication.
It is an object of the present invention to provide a semiconductor device that has sufficient insulation properties between a screw and a heat dissipation plate, and is smaller and less costly. A semiconductor device of the present invention includes the following: a housing containing a semiconductor element; a heat dissipation plate disposed on a bottom surface of the housing, and provided to partly extend beyond the housing to reach the outside; an electrode electrically connected to the semiconductor element, and provided to partly protrude from the housing to the outside in parallel with the heat dissipation plate; and a screw with which an exposed portion of the electrode, protruding from the housing is joined to a busbar. The heat dissipation plate has a thickness lack portion in a location of the heat dissipation plate, the location at least facing the screw, the location being on a screw side.
Opening claim text (preview).
The invention claimed is: 1. A semiconductor device comprising: a housing containing a semiconductor element; a heat dissipation plate disposed on a bottom surface of the housing, and provided to partly extend beyond the housing to reach an outside; an electrode electrically connected to the semiconductor element, and provided to partly protrude from the housing to the outside in parallel with the heat dissipation plate; and a screw penetrating the partly protruded portion of the electrode, and joined to an external terminal, wherein the heat dissipation plate comprises a thickness lack portion at least at a location facing the screw, and the thickness lack portion is thinner than the other portions of the heat dissipation plate, at a side facing the screw. 2. The semiconductor device according to claim 1 , wherein the heat dissipation plate comprises the thickness lack portion all across a site in which the heat dissipation plate extends to reach the outside, the site including the location facing the screw. 3. The semiconductor device according to claim 1 , wherein the heat dissipation plate comprises the thickness lack portion only in the location facing the screw. 4. The semiconductor device according to claim 1 , wherein at least a portion of each of the screw and the thickness lack portion directly face each other. 5. A semiconductor device comprising: a housing containing a semiconductor element; a heat dissipation plate disposed on a bottom surface of the housing, and provided to partly extend beyond the housing to reach an outside; an electrode electrically connected to the semiconductor element, and provided to partly protrude from the housing to the outside in parallel with the heat dissipation plate; and a screw penetrating the partly protruded portion of the electrode, and joined to an external terminal, wherein the heat dissipation plate includes an opening at a location overlying the screw when viewed from a side at the heat dissipation plate facing opposite the screw, and a width of the opening is greater than a width of a head of the screw. 6. The semiconductor device according to claim 5 , wherein the heat dissipation plate comprises a cutout in the location facing the screw. 7. The semiconductor device according to claim 5 , wherein the opening surrounds the location facing the screw. 8. The semiconductor device according to claim 5 , wherein at least a portion of the screw is viewable through the opening from the side at the heat dissipation plate facing opposite the screw.
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