Method of forming photoresist pattern and method of fabricating semiconductor device using the same

Patent metadata

Field	Value
Publication number	US-10438810-B2
Application number	US-201615243128-A
Country	US
Kind code	B2
Filing date	Aug 22, 2016
Priority date	Nov 3, 2015
Publication date	Oct 8, 2019
Grant date	Oct 8, 2019

Abstract

Example embodiments relate to a method of forming a photoresist pattern and a method of fabricating a semiconductor device using the same. The method of fabricating a semiconductor device comprises forming a mask layer on a substrate, forming a photoresist pattern on the mask layer, the photoresist pattern having pattern portions at a first height and recess portions, applying a first liquid onto the photoresist pattern, filling the recess portions with a pattern filler at a second height, the pattern filler having an higher etch rate than the etch rate of the pattern portions to the same etchant, removing the first liquid, etching the pattern filler after removing the first liquid, etching the mask layer via the photoresist pattern to form a mask pattern, and etching the substrate via the mask pattern to form a fine pattern.

First claim

What is claimed is:

1. A method of fabricating a semiconductor device, the method comprising:
forming a mask layer on a substrate;
forming a photoresist pattern on the mask layer, the photoresist pattern having pattern portions and recess portions, the pattern portions having a first height;
applying a first liquid onto the photoresist pattern;
filling the recess portions with a pattern filler up to a second height after applying the first liquid by adding a pattern filler in the first liquid so that the first liquid floats on all the pattern filler, the pattern filler having a higher etch rate than an etch rate of the pattern portions, a density of the pattern filler being higher than a density of the first liquid;
removing the first liquid after filling the recess portions with the pattern filler;
etching the pattern filler;
etching the mask layer via the photoresist pattern to form a mask pattern; and
etching the substrate via the mask pattern to form a fine pattern;
wherein the filling the recess portions with the pattern filler is performed without baking,
wherein the etch rate of the pattern filler is at least about 150% of the etch rate of the pattern portions,
wherein the pattern filler includes a material having an Ohnishi parameter of about 4 or greater, and
wherein the pattern filler includes a dextrin material.

2. The method of claim 1 , wherein
the first height is greater than the second height, and
the etch rate of the pattern filler decreases as a difference between the first height and the second height increases.

3. The method of claim 1 , wherein the etching the pattern filler comprises:
etching the pattern portions at least partially so that the pattern portions have a third height that is lower than the first height by a first difference, and the etch rate of the pattern filler increases as a difference between the first difference and the second height increases.

4. The method of claim 1 , wherein the second height is at least about 30% of the first height.

5. The method of claim 1 , wherein the etching the pattern filler comprises:
etching the pattern filler via a dry etching process.

6. A method of forming a photoresist pattern, the method comprising:
forming a photoresist pattern on a mask layer, the photoresist pattern having pattern portions and recess portions, the pattern portions having a first height;
applying a first liquid onto the photoresist pattern;
filling the recess portions with a pattern filler up to a second height after applying the first liquid by adding a pattern filler in the first liquid so that the first liquid floats on all the pattern filler, the pattern filler having a higher etch rate than an etch rate of the pattern portions, a density of the pattern filler being higher than a density of the first liquid;
removing the first liquid after filling the recess portions with the pattern filler; and
etching the pattern filler to form the photoresist pattern such that the pattern portions are at least partially etched to have a third height that is lower than the first height by a first difference;
wherein the filling the recess portions with the pattern filler is performed without baking,
wherein the etch rate of the pattern filler is at least about 150% of the etch rate of the pattern portions,
wherein the pattern filler includes a material having an Ohnishi parameter of about 4 or greater, and
wherein the pattern filler includes a dextrin material.

7. The method of claim 6 , wherein
the first height is greater than the second height, and
the etch rate of the pattern filler decreases as a difference between the first height and the second height increases.

8. The method of claim 6 , wherein the etch rate of the pattern filler increases as a difference between the first difference and the second height increases.

9. The method of claim 6 , wherein the second height is at least about 30% of the first height.

10. A method, comprising:
forming a photoresist pattern on a mask layer, the photoresist pattern having at least one pattern portion and at least one recessed portion adjacent to the at least one pattern portion, the at least one pattern portion having a first height;
applying a first liquid onto the photoresist pattern;
adding a pattern filler to the at least one recessed portion up to a second height after applying the first liquid by adding a pattern filler in the first liquid so that the first liquid floats on all the pattern filler, the second height being lower than the first height and greater than a threshold height, a density of the pattern filler being higher than a density of the first liquid;
removing the first liquid after filling the at least one recessed portion with the pattern filler; and
removing the pattern filler;
wherein the adding the pattern filler to the at least one recessed portion is performed without baking,
wherein the removing the pattern filler includes
etching the pattern filler and the at least one pattern portion via an etchant, an etch rate of the pattern filler is at least about 150% an etch rate of the at least one pattern portion,

wherein the pattern filler includes a material having an Ohnishi parameter of about 4 or greater, and
the pattern filler includes a dextrin material.

11. The method of claim 10 , wherein the threshold height is at least about 30% of the first height.

12. The method of claim 10 , wherein the at least one pattern portion is at least partially etched to have a third height that is lower than the first height, the third height being a height of the photoresist pattern.

13. The method of claim 1 , wherein the removing the first liquid is performed by spin drying the photoresist pattern.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Koh Cha-Won
• Park Cheol-Hong
• Kim Hyun-Woo
• Han Jin-Kyu

Classifications

• H10P70/15

  by wet cleaning only (H10P70/52 takes precedence) · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/694

  characterised by their behaviour during the process, e.g. soluble masks or redeposited masks · CPC title

• H10P50/696 Primary

  Process specially adapted to improve the resolution of the mask · CPC title

• H10P70/23 Primary

  during, before or after processing of insulating materials · CPC title