Reference voltage generator

Patent metadata

Field	Value
Publication number	US-10437274-B2
Application number	US-201816157077-A
Country	US
Kind code	B2
Filing date	Oct 10, 2018
Priority date	Jan 3, 2018
Publication date	Oct 8, 2019
Grant date	Oct 8, 2019

Abstract

A reference voltage generator includes a voltage generation circuit, an amplifier, a diode unit and a transistor. The voltage generation circuit includes an output terminal for outputting a reference voltage, a first terminal having an operational voltage, and a second terminal. The amplifier includes an input terminal coupled to the first terminal of the voltage generation circuit, an output terminal, a first terminal coupled to a first voltage terminal, and a second terminal. The diode unit includes a first terminal coupled to the second terminal of the amplifier, and a second terminal coupled to the second terminal of the voltage generation circuit and a second voltage terminal. The transistor includes a first terminal coupled to the first terminal of the amplifier, a second terminal coupled to the output terminal of the voltage generation circuit, and a control terminal coupled to the output terminal of the amplifier.

First claim

What is claimed is:

1. A reference voltage generator comprising:
a first resistor comprising a first terminal and a second terminal;
a first transistor comprising a first terminal, a second terminal coupled to the second terminal of the first resistor, and a control terminal coupled to an operation node;
a second transistor comprising a first terminal, a second terminal coupled to the first terminal of the first resistor, and a control terminal coupled to the operation node;
a third transistor comprising a first terminal, a second terminal coupled to the first terminal of the first transistor, and a control terminal coupled to the first terminal of the third transistor;
a fourth transistor comprising a first terminal, a second terminal coupled to the first terminal of the second transistor, and a control terminal coupled to the control terminal of the third transistor;
a second resistor comprising a first terminal coupled to an output terminal for outputting a reference voltage, and a second terminal coupled to the first terminal of the fourth transistor;
a third resistor comprising a first terminal coupled to the first terminal of the second resistor, and a second terminal coupled to the first terminal of the third transistor;
a fourth resistor comprising a first terminal and a second terminal;
a fifth transistor comprising a first terminal coupled to the second terminal of the fourth resistor, a second terminal, and a control terminal coupled to the first terminal of the fourth transistor;
a diode unit comprising a first terminal coupled to the second terminal of the fifth transistor, and a second terminal coupled to the second terminal of the first resistor; and
a sixth transistor comprising a first terminal coupled to the first terminal of the fourth resistor, a second terminal coupled to the first terminal of the second resistor, and a control terminal coupled to the second terminal of the fourth resistor;
wherein the operation node is coupled to the first terminal of the first transistor or the first terminal of the second transistor.

2. The reference voltage generator of claim 1 , wherein a voltage level at the first terminal of the third transistor is substantially equal to a voltage level at the first terminal of the fourth transistor, and a current flowing through the second resistor is substantially equal to a current flowing through the third resistor.

3. The reference voltage generator of claim 1 , wherein a resistance of the second resistor is substantially equal to a resistance of the third resistor.

4. The reference voltage generator of claim 1 , wherein a resistance of the second resistor is divided by a resistance of the first resistor to obtain a parameter, a first voltage difference is across the first resistor, a second voltage difference is across the control terminal and the second terminal of the first transistor, a sum is obtained by summing the second voltage difference and a product of the parameter and the first voltage difference, and the sum is substantially unaffected by temperature.

5. The reference voltage generator of claim 1 , wherein a resistance of the second resistor is divided by a resistance of the first resistor to obtain a parameter, a first voltage difference is across the first resistor, a second voltage difference is across the control terminal and the second terminal of the first transistor, a sum is obtained by summing the second voltage difference and a product of the parameter and the first voltage difference, and the sum is substantially proportional to the reference voltage.

6. The reference voltage generator of claim 1 , wherein the diode unit comprises a seventh transistor, and the seventh transistor comprises a first terminal coupled to the first terminal of the diode unit, a second terminal coupled to the second terminal of the diode unit, and a control terminal coupled to the first terminal of the seventh transistor.

7. The reference voltage generator of claim 6 , wherein the seventh transistor is a field effect transistor.

8. The reference voltage generator of claim 6 , wherein the seventh transistor is a bipolar junction transistor.

9. The reference voltage generator of claim 8 , wherein the bipolar junction transistor is an NPN-type transistor.

10. The reference voltage generator of claim 1 , wherein the diode unit comprises a diode, and the diode comprises a first terminal coupled to the first terminal of the diode unit, and a second terminal coupled to the second terminal of the diode unit.

11. The reference voltage generator of claim 1 , wherein the reference voltage generator is manufactured using a Bipolar Field Effect Transistor process or a bipolar process.

12. The reference voltage generator of claim 1 , wherein the first terminal of the fourth resistor is coupled to a first voltage terminal, the second terminal of the first resistor is coupled to a second voltage terminal, and a voltage at the first voltage terminal is higher than a voltage at the second voltage terminal.

13. The reference voltage generator of claim 1 , wherein an area of the second transistor is substantially four times an area of the first transistor.

14. The reference voltage generator of claim 1 , wherein at least one of the first transistor, the second transistor, the third transistor, the fourth transistor and the fifth transistor is a bipolar junction transistor.

15. The reference voltage generator of claim 14 , wherein the bipolar junction transistor is an NPN-type transistor.

16. The reference voltage generator of claim 1 , wherein the sixth transistor is a field-effect transistor.

17. The reference voltage generator of claim 1 , wherein the sixth transistor is a bipolar junction transistor.

Assignees

• Richwave Technology Corp

Inventors

• Chien Hwey-Ching

Classifications

• G05F1/567

  for temperature compensation · CPC title

• H03F2203/45352

  the AAC comprising a combination of a plurality of transistors, e.g. Darlington coupled transistors · CPC title

• H03F2203/45318

  the AAC comprising a cross coupling circuit, e.g. two extra transistors cross coupled · CPC title

• H03F2203/45022

  One or more added resistors to the amplifying transistors in the differential amplifier · CPC title

• H03F3/45174

  Mirror types · CPC title