Quantum dot composite material and manufacturing method and application thereof

Patent metadata

Field	Value
Publication number	US-10436973-B2
Application number	US-201615362120-A
Country	US
Kind code	B2
Filing date	Nov 28, 2016
Priority date	Nov 30, 2015
Publication date	Oct 8, 2019
Grant date	Oct 8, 2019

Abstract

A quantum dot composite material and a manufacturing method and an application thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has a chemical formula of CsPb(ClaBr1-a-bIb)3, wherein 0≤a≤1, 0≤b≤1.

First claim

What is claimed is:

1. A quantum dot composite material, comprising:
an all-inorganic perovskite quantum dot having a chemical formula of CsPb(Cl a Br 1-a-b I b ) 3 , wherein 0≤a≤1, 0≤b≤1; and
a modification protection on a surface of the all-inorganic perovskite quantum dot,
wherein the modification protection comprises a mesoporous particle, the mesoporous particle has a surface having pores, the all-inorganic perovskite quantum dot is embedded in the pores.

2. The quantum dot composite material according to claim 1 , wherein the modification protection further comprises a microcapsule, a polymer encapsulation, an oxide or nitride dielectric encapsulation or a combination thereof.

3. The quantum dot composite material according to claim 1 , wherein the modification protection further comprises a ligand exchange, the ligand exchange is on the surface of the all-inorganic perovskite quantum dot embedded in the pores of the mesoporous particle.

4. The quantum dot composite material according to claim 3 , wherein the ligand exchange is formed by a sulfuring treatment performed to the surface of the all-inorganic perovskite quantum dot.

5. The quantum dot composite material according to claim 3 , wherein the modification protection further comprises a polymer encapsulation, a silicon containing material encapsulation or an oxide or nitride dielectric encapsulation, covering the mesoporous particle.

6. The quantum dot composite material according to claim 1 , wherein the mesoporous particle has a particle diameter in a range of 200 nm to 1000 nm, the pores of the mesoporous particle have a size of 1 nm to 100 nm.

7. The quantum dot composite material according to claim 6 , wherein the pores have the size of 2 nm to 20 nm.

8. The quantum dot composite material according to claim 2 , wherein:
the mesoporous particle has a material comprising silicon dioxide;
the polymer encapsulation has a material comprising PMMA, PET, PEN, PS, PVDF, PVAC, PP, PA, PC, PI, an epoxy, a silicone, or a combination thereof;
the oxide or nitride dielectric encapsulation has a material comprising a metal oxide, a metal nitride or a combination thereof.

9. The quantum dot composite material according to claim 1 , wherein the all-inorganic perovskite quantum dot comprises a red all-inorganic perovskite quantum dot having a chemical formula of CsPb(Br 1-b I b ) 3 with 0.5≤b≤1, a green all-inorganic perovskite quantum dot having a chemical formula of CsPb(Br 1-b I b ) 3 with 0≤b<0.5, or a blue all-inorganic perovskite quantum dot having a chemical formula of CsPb(Cl a Br 1-a ) 3 with 0<a≤1, or a combination thereof.

10. The quantum dot composite material according to claim 9 , wherein the red all-inorganic perovskite quantum dot has a particle diameter in a range of 10 nm to 14 nm, the green all-inorganic perovskite quantum dot has a particle diameter in a range of 8 nm to 12 nm, the blue all-inorganic perovskite quantum dot has a particle diameter in a range of 7 nm to 10 nm.

11. A manufacturing method for a quantum dot composite material, comprising:
providing an all-inorganic perovskite quantum dot having a chemical formula of CsPb(Cl a Br 1-a-b I b ) 3 , 0≤a≤1, 0≤b≤1; and
forming a modification protection on a surface of the all-inorganic perovskite quantum dot,
wherein the forming the modification protection on the surface of the all-inorganic perovskite quantum dot comprises: embedding the all-inorganic perovskite quantum dot in a pore of a surface of a mesoporous particle.

12. The manufacturing method for the quantum dot composite material according to claim 11 , wherein the forming the modification protection on the surface of the all-inorganic perovskite quantum dot further comprises:
before the embedding the all-inorganic perovskite quantum dot in the pore of the surface of the mesoporous particle, performing a sulfuring treatment to the surface of the all-inorganic perovskite quantum dot; and
covering the mesoporous particle with a polymer encapsulation.

13. The manufacturing method for the quantum dot composite material according to claim 12 , wherein the sulfuring treatment comprises reacting the all-inorganic perovskite quantum dot with a sulfur containing compound by a ligand exchanging reaction.

14. The manufacturing method for the quantum dot composite material according to claim 13 , wherein the sulfur containing compound comprises a sulfur containing quaternary ammonium salt.

15. The manufacturing method for the quantum dot composite material according to claim 13 , wherein the sulfuring treatment comprises:
mixing the all-inorganic perovskite quantum dot with an oleic acid; and
mixing the oleic acid and the all-inorganic perovskite quantum dot with a sulfuring agent having the sulfur containing compound,
wherein the sulfuring agent is manufactured by a method comprising mixing an organic solution dissolving a halogen containing quaternary ammonium salt and an aqueous solution dissolving an alkali metal sulfide.

16. The manufacturing method for the quantum dot composite material according to claim 15 , wherein the halogen containing quaternary ammonium salt has a formula of R 4 NX, R is an alkyl group, an alkoxyl group, a phenyl group or an alkyl phenyl group containing a carbon chain having 1-20 carbon atoms, X is chlorine, bromine or iodine.

Assignees

• Lextar Electronics Corp

Inventors

• Wang Hung-Chia
• Zhang xue-jie
• Lin Shin-Ying
• Tang An-Cih
• Liu Ru-Shi
• Tsai Tzong-Liang
• Lee Yu-Chun
• Chen Ching-Yi
• Tong Hung-Chun

Classifications

• H10W72/5475

  multiple bond wires connected to common bond pads at both ends of the wires · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W90/00

  Package configurations · CPC title

• Y10S977/774

  Exhibiting three-dimensional carrier confinement, e.g. quantum dots · CPC title

• Y10S977/95

  Electromagnetic energy · CPC title