Positive/negative phase shift bimetallic zone plate

US10436722B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10436722-B2
Application numberUS-201415311879-A
CountryUS
Kind codeB2
Filing dateMay 22, 2014
Priority dateMay 22, 2014
Publication dateOct 8, 2019
Grant dateOct 8, 2019

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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Abstract

Official abstract text for this publication.

The invention provides a positive/negative phase shift bimetallic zone plate and production method thereof, wherein the positive/negative phase shift bimetallic zone plate comprises: a first metallic material having a positive phase shift; a second metallic material having a negative phase shift at a working energy point; wherein the first metallic material and the second metallic material are alternately arranged, so that the second metallic material replaces the blank portion in a cycle of a traditional zone plate.

First claim

Opening claim text (preview).

The invention claimed is: 1. A positive/negative phase shift bimetallic zone plate; comprising: a first metallic material having a positive phase shift; a second metallic material having a negative phase shift at a working energy point; wherein the first metallic material and the second metallic material are alternately arranged, so that the second metallic material replaces the blank portion in a cycle of a traditional zone plate. 2. The positive/negative phase shift bimetallic zone plate of claim 1 , wherein the positive/negative phase shift bimetallic zone plate is annular, and the first metallic material and the second metallic material form a structure of alternate rings. 3. The positive/negative phase shift bimetallic zone plate of claim 1 , the first metallic material is selected from nickel, gold, germanium, titanium, vanadium, chromium, manganese, iron, copper, zinc. 4. The positive/negative phase shift bimetallic zone plate of claim 1 , the second metallic material is selected from titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, germanium, hafnium, tungsten, rhenium and osmium. 5. The positive/negative phase shift bimetallic zone plate of claim 1 , wherein in the case that the positive/negative phase shift bimetallic zone plate has the same thickness as that of a normal monometallic phase zone plate, the diffraction efficiency of the positive/negative phase shift bimetallic zone plate is higher than the diffraction efficiency of the normal monometallic phase zone plate in conventional ranges. 6. The positive/negative phase shift bimetallic zone plate of claim 1 , the positive/negative phase shift bimetallic zone plate is a vanadium-nickel, titanium-nickel, or vanadium-gold bimetallic zone plate. 7. A method of producing a positive/negative phase shift bimetallic zone plate, comprising following steps: a. depositing a thin film of a first metallic material on a substrate; b. forming a photoresist having a zone plate structure on the thin film of the first metallic material; c. transferring the zone plate structure to the thin film of the first metallic material by performing etching via the formed photoresist having the zone plate structure, so as to form a zone plate structure of the first metallic material; d. depositing the second metallic material at interspaces formed by the etching; e. removing the photoresist, so as to form a positive/negative phase shift bimetallic zone plate structure. 8. The method of claim 7 , wherein the photoresist is coated by spin coating, and thereafter is subjected to electron beam exposure or interference lithography, so as to form a photoresist having a zone plate structure. 9. The method of claim 7 , wherein the etching in step d is performed by argon ion etching or reactive ion etching. 10. The method of claim 7 , further comprising: opening a window on the back side of the positive/negative phase shift bimetallic zone plate structure obtained in step e, to obtain the positive/negative phase shift bimetallic zone plate.

Assignees

Inventors

Classifications

  • using diffraction, refraction or reflection, e.g. monochromators (G21K1/10, G21K7/00 take precedence) · CPC title

  • Etching metallic material by chemical means (manufacture of printing surfaces B41C; manufacture of printed circuits H05K) · CPC title

  • Diffraction gratings {(holographic optical elements G02B5/32, G03H; integrally combined with optical fibres G02B6/02057; for coupling light guides G02B6/34; integrally combined with optical integrated light guides G02B6/12; grating systems G02B27/44)} · CPC title

  • Spin coating · CPC title

  • Gamma- or X-ray microscopes · CPC title

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What does patent US10436722B2 cover?
The invention provides a positive/negative phase shift bimetallic zone plate and production method thereof, wherein the positive/negative phase shift bimetallic zone plate comprises: a first metallic material having a positive phase shift; a second metallic material having a negative phase shift at a working energy point; wherein the first metallic material and the second metallic material are …
Who is the assignee on this patent?
Univ Science & Technology China
What technology area does this patent fall under?
Primary CPC classification G02B27/44. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Oct 08 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).