Method of room temperature covalent bonding

Patent metadata

Field	Value
Publication number	US-10434749-B2
Application number	US-201414474501-A
Country	US
Kind code	B2
Filing date	Sep 2, 2014
Priority date	May 19, 2003
Publication date	Oct 8, 2019
Grant date	Oct 8, 2019

Abstract

A method of bonding includes using a bonding layer having a fluorinated oxide. Fluorine may be introduced into the bonding layer by exposure to a fluorine-containing solution, vapor or gas or by implantation. The bonding layer may also be formed using a method where fluorine is introduced into the layer during its formation. The surface of the bonding layer is terminated with a desired species, preferably an NH2 species. This may be accomplished by exposing the bonding layer to an NH4OH solution. High bonding strength is obtained at room temperature. The method may also include bonding two bonding layers together and creating a fluorine distribution having a peak in the vicinity of the interface between the bonding layers. One of the bonding layers may include two oxide layers formed on each other. The fluorine concentration may also have a second peak at the interface between the two oxide layers.

First claim

The invention claimed is:

1. A bonding method, comprising:
forming a first bonding layer on a first element, the first bonding layer comprising a plurality of discrete layers containing fluorine, wherein forming the first bonding layer comprises:
depositing a first oxide layer on the first element, and introducing fluorine into the first oxide layer;
polishing the first oxide layer;
depositing a second oxide layer directly on the first oxide layer to define an interface between the first oxide layer and the second oxide layer, the first oxide layer separate from the second oxide layer, and introducing fluorine into the second oxide layer; and
polishing the second oxide layer;

forming a second bonding layer on a second element;
bringing into contact a surface of the second oxide layer with a surface of the second bonding layer at about room temperature; and
forming a bond between the second oxide layer and the second bonding layer.

2. The method of claim 1 , wherein forming the first bonding layer comprises depositing the first oxide layer and subsequently introducing fluorine into the first oxide layer; and depositing the second oxide layer and subsequently introducing fluorine into the second oxide layer.

3. The method of claim 2 , wherein introducing fluorine into the first oxide layer or the second oxide layer comprises implanting fluorine ions in the first oxide layer or the second oxide layer, or exposing the first oxide layer or the second oxide layer to hydrogen fluoride (HF).

4. The method of claim 1 , further comprising polishing the second oxide layer sufficiently for bonding with the second bonding layer at about room temperature.

5. The method of claim 1 , wherein polishing the second oxide layer comprises polishing the second oxide layer to have a surface roughness of 1 Å to 3 Å.

6. The method of claim 1 , further comprising annealing the first element.

7. The method of claim 1 , wherein forming the second bonding layer comprises forming a third oxide layer on the second element and a fourth oxide layer on the third oxide layer.

8. The method of claim 7 , further comprising introducing fluorine in one or more of the third oxide layer and the fourth oxide layer.

9. The method of claim 1 , further comprising terminating a surface of the first bonding layer with a nitrogen-containing species.

10. The method of claim 9 , wherein terminating the surface of the first bonding layer with the nitrogen-containing species produces Si—N covalent bonds between the second oxide layer and the second bonding layer.

11. The method of claim 1 , further comprising forming a fluorine concentration within the first bonding layer, the fluorine concentration having a first peak at the interface between the first and second oxide layers and a second peak at a second interface between the first and second bonding layers.

12. The method of claim 11 , wherein forming the second bonding layer comprises forming a third oxide layer on the second element and a fourth oxide layer on the third oxide layer, the second bonding layer having a second fluorine concentration, the second fluorine concentration comprising a third peak at a third interface between the third and the fourth oxide layers.

13. The method of claim 1 , wherein forming the first bonding layer comprises exposing the first element to a fluorine-containing species.

14. A bonding method comprising:
forming a first bonding layer comprising a plurality of discrete layers containing fluorine, wherein forming the first bonding layer comprises:
forming a first oxide layer, the first oxide layer including fluorine,
polishing the first oxide layer,
depositing a second oxide layer directly on the first oxide layer after polishing the first oxide layer, and
polishing the second oxide layer, the second oxide layer including fluorine; and

directly bonding the first bonding layer to a second bonding layer after polishing the second oxide layer.

15. The method of claim 14 , wherein the directly bonding comprises forming a bond between the second oxide layer and the second bonding layer at about room temperature.

16. The method of claim 14 , further comprising forming a fluorine concentration within the first bonding layer, the fluorine concentration having a first peak at a first interface between the first and second oxide layers and a second peak at a second interface between the first and second bonding layers.

Assignees

• Invensas Bonding Tech Inc

Inventors

• Tong Qin-Yi

Classifications

• H10W72/072

  of bump connectors · CPC title

• H10W72/29

  Bond pads specially adapted therefor · CPC title

• H10W72/30

  Die-attach connectors · CPC title

• H10W99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H10W72/07331

  Connecting techniques · CPC title