Regulation of an RF amplifier

Patent metadata

Field	Value
Publication number	US-10432154-B2
Application number	US-201715609639-A
Country	US
Kind code	B2
Filing date	May 31, 2017
Priority date	Nov 29, 2016
Publication date	Oct 1, 2019
Grant date	Oct 1, 2019

Abstract

A radiofrequency (RF) amplifier includes an input terminal, an output terminal, and a power supply and biasing stage having an output coupled to the input terminal. An amplification stage of the RF amplifier includes a first transistor having a control terminal coupled to the input terminal and a first conduction terminal coupled to the output terminal. The power supply and biasing stage is configured to generate a bias voltage at the control terminal of the first transistor to simultaneously regulate a power supply voltage of the amplification stage to a first voltage and a bias current of the amplification stage to a first current.

First claim

What is claimed is:

1. A radio frequency (RF) amplifier comprising:
an input terminal;
an output terminal;
a power supply and biasing stage comprising a first amplifier having an output coupled to the input terminal, and a second amplifier having an output coupled to a current source; and
an amplification stage comprising a first transistor having a control terminal coupled to the input terminal and a first conduction terminal coupled to the output terminal, wherein the power supply and biasing stage is configured to generate a bias voltage at the control terminal of the first transistor to simultaneously regulate a power supply voltage of the amplification stage to a first voltage and a bias current of the amplification stage to a first current, wherein the first amplifier is configured to regulate the first conduction terminal of the first transistor to the first voltage, the first amplifier configured to provide, at the output of the first amplifier, the bias voltage, wherein the second amplifier is configured to regulate the bias current to the first current.

2. The RF amplifier of claim 1 , wherein the amplification stage is configured to generate the bias voltage based on variations of the bias current.

3. A radio frequency (RF) amplifier comprising:
an input terminal;
an output terminal;
a power supply and biasing stage having an output coupled to the input terminal; and
an amplification stage comprising a first transistor having a control terminal coupled to the input terminal and a first conduction terminal coupled to the output terminal, wherein the power supply and biasing stage is configured to generate a bias voltage at the control terminal of the first transistor to simultaneously regulate a power supply voltage of the amplification stage to a first voltage and a bias current of the amplification stage to a first current, wherein the power supply and biasing stage comprises a first amplifier having an output coupled to a current source, the first amplifier configured to regulate the bias current to the first current, and wherein the first current is a fixed current.

4. The RF amplifier of claim 1 , wherein the current source comprises a second transistor coupled to a supply terminal and having a gate coupled to the output of the second amplifier.

5. The RF amplifier of claim 4 , wherein the first and second transistors are MOS transistors.

6. The RF amplifier of claim 4 , wherein the first and second transistors are bipolar transistors.

7. A circuit comprising:
a radio frequency (RF) amplification stage comprising a first transistor having a gate configured to receive a RF signal; and
a power supply and biasing stage comprising:
a first current source configured to generate a bias current and coupled to a first conduction terminal of the first transistor, and
a first amplifier having
a first input coupled to the first conduction terminal of the first transistor,
a second input coupled to a first reference voltage node, the first reference voltage node configured to receive a first reference voltage,
an output coupled to the gate of the first transistor, the first amplifier configured to generate a bias voltage at the output of the first amplifier and to apply the bias voltage to the gate of the first transistor,
a second transistor coupled between a first supply terminal and the second input of the first amplifier,
a second amplifier having an output coupled to a gate of the second transistor, the second amplifier configured to regulate the second input of the first amplifier to the first reference voltage, and
a second current source coupled between the second transistor and a second supply terminal, wherein the first current source comprises a third transistor coupled between the first supply terminal and the first input of the first amplifier, the third transistor having a gate coupled to the output of the second amplifier.

8. The circuit of claim 7 , wherein the first amplifier is configured to regulate the first conduction terminal of the first transistor to the first reference voltage.

9. The circuit of claim 8 , wherein the first amplifier is configured to generate the bias voltage at the gate of the first transistor as a function of the bias current.

10. A circuit comprising:
a radio frequency (RF) amplification stage comprising a first transistor having a gate configured to receive a RF signal; and
a power supply and biasing stage comprising:
a first current source configured to generate a bias current and coupled to a first conduction terminal of the first transistor,
a first amplifier having
a first input coupled to the first conduction terminal of the first transistor,
a second input coupled to a first reference voltage node, the first reference voltage node configured to receive a first reference voltage, and
an output coupled to the gate of the first transistor,
a first capacitor coupled between the first conduction terminal of the first transistor and a second supply terminal,
a second capacitor coupled between the output of the first amplifier and the second supply terminal,
a second transistor coupled between a first supply terminal and the second input of the first amplifier,
a second amplifier having an output coupled to a gate of the second transistor, the second amplifier configured to regulate the second input of the first amplifier to the first reference voltage, and
a second current source coupled between the second transistor and a second supply terminal, wherein the first current source comprises a third transistor coupled between the first supply terminal and the first input of the first amplifier, the third transistor having a gate coupled to the output of the second amplifier.

11. The circuit of claim 7 , wherein the second supply terminal is coupled to ground.

12. A circuit comprising:
a radio frequency (RF) amplification stage comprising a first transistor having a gate configured to receive a RF signal; and
a power supply and biasing stage comprising:
a second transistor coupled to a first supply terminal,
a first current source configured to generate a bias current and coupled to a first conduction terminal of the first transistor the first current source comprising a third transistor coupled between the first supply terminal and the first conduction terminal of the first transistor, the third transistor having a gate coupled to a gate of the second transistor,
a second current source coupled between the second transistor and a second supply terminal,
a fourth transistor having a first conduction terminal coupled to a first conduction terminal of the second transistor, and a second conduction terminal coupled to a gate of the second transistor, and
a fifth transistor having a first conduction terminal coupled to the gate of the first transistor, a second conduction terminal coupled to the first conduction terminal of the first transistor, and a gate coupled to a gate of the fourth transistor, the gate of the fifth transistor further coupled to a first reference voltage node.

13. The circuit of claim 12 , wherein the power supply and biasing stage further comprises:
a sixth transistor coupled between the first supply terminal and a second conduction terminal of the fifth transistor, the sixth transistor having a gate coupled to the gate of the third transistor;
a seventh transistor coupled between the second supply terminal and the first conduction terminal of the fifth transistor; and
a first capacitor coupled between the first conduction terminal of the fifth transistor and the third transistor.

14. The circuit of claim 13 , wherein:

Assignees

• St Microelectronics Sa

Inventors

• Vogt Lionel

Classifications

• H03F2203/45031

  the differential amplifier amplifying transistors are compositions of multiple transistors · CPC title

• H03F3/19

  with semiconductor devices only · CPC title

• H03F2200/18

  the bias of the gate of a FET being controlled by a control signal · CPC title

• H03F1/301

  in MOSFET amplifiers (H03F1/303, H03F1/305, H03F1/308 take precedence) · CPC title

• H03F3/45179

  using MOSFET transistors as the active amplifying circuit (H03F3/45278 takes precedence) · CPC title