Semiconductor laser, semiconductor laser set and display device

Patent metadata

Field	Value
Publication number	US-10429664-B2
Application number	US-201815955852-A
Country	US
Kind code	B2
Filing date	Apr 18, 2018
Priority date	May 12, 2017
Publication date	Oct 1, 2019
Grant date	Oct 1, 2019

Abstract

According to one embodiment, a semiconductor laser includes a semiconductor laser element. A drive current which is composed of a direct current and an alternating current superposed thereon is applied to the semiconductor laser element. A waveform of the alternating current is a non-square wave. A frequency of the alternating current is from 50 Hz to 500 kHz.

First claim

What is claimed is:

1. A semiconductor laser comprising a semiconductor laser element, wherein
a drive current which is composed of a direct current and an alternating current superposed thereon is applied to the semiconductor laser element,
a waveform of the alternating current is a non-square wave,
a frequency of the alternating current is from 50 Hz to 500 kHz, and
a dominant emission wavelength of the semiconductor laser is greater than 467 nm and less than or equal to 485 nm, greater than 532 nm and less than or equal to 555 nm, or greater than 630 nm and less than or equal to 655 nm.

2. The semiconductor laser of claim 1 , wherein the non-square wave is a sine wave or a triangle wave.

3. The semiconductor laser of claim 1 , wherein a wavelength difference between a dominant emission wavelength and a shortest wavelength is greater than a wavelength difference between the dominant emission wavelength and a longest wavelength in an emission wavelength range of the semiconductor laser.

4. A semiconductor laser set comprising two or more of the semiconductor laser of claim 1 , wherein
the semiconductor lasers emit light having substantially same colors and have different dominant emission wavelengths.

5. The semiconductor laser set of claim 4 , wherein emission wavelength ranges of the semiconductor lasers partially overlap each other.

6. The semiconductor laser set of claim 4 , wherein the non-square wave is a sine wave or a triangle wave.

7. The semiconductor laser set of claim 4 , wherein a wavelength difference between a dominant emission wavelength and a shortest wavelength is greater than a wavelength difference between the dominant emission wavelength and a longest wavelength in an emission wavelength range of each of the semiconductor lasers.

8. A semiconductor laser set comprising:
a first semiconductor laser; and
a second semiconductor laser, wherein
each of the first semiconductor laser and the second semiconductor laser is the semiconductor laser of claim 1 ,
a dominant emission wavelength of the first semiconductor laser is greater than or equal to 467 nm and less than or equal to 485 nm,
a dominant emission wavelength of the second semiconductor laser is greater than or equal to 532 nm and less than or equal to 555 nm, and
a wavelength difference between the dominant emission wavelength of the first semiconductor laser and the dominant emission wavelength of the second semiconductor laser is greater than or equal to 65 nm and less than or equal to 88 nm.

9. The semiconductor laser set of claim 8 , comprising two or more of the first semiconductor laser which emit light having substantially same colors with a first color and have different dominant emission wavelengths, or comprising two or more of the second semiconductor laser which emit light having substantially same colors with a second color different from the first color and have different dominant emission wavelengths.

10. The semiconductor laser set of claim 8 , wherein the non-square wave is a sine wave or a triangle wave.

11. A display device comprising:
the semiconductor laser set of claim 8 ; and
a color filter having a maximum transmittance at a wavelength of greater than or equal to 450 nm and less than or equal to 480 nm, wherein
the color filter has a maximum transmittance at a first wavelength, a transmittance of 10% at a second wavelength which is shorter than the first wavelength, and a transmittance of 10% at a third wavelength which is longer than the first wavelength, and
B/A is less than or equal to 0.75 where A is a wavelength difference between the first wavelength and the second wavelength and B is a wavelength difference between the first wavelength and the third wavelength.

12. The semiconductor laser set of claim 9 , further comprising a third semiconductor laser, wherein
a dominant emission wavelength of the third semiconductor laser is greater than or equal to 600 nm and less than or equal to 650 nm.

13. The display device of claim 11 , comprising two or more of the first semiconductor laser which emit light having substantially same colors with a first color and have different dominant emission wavelengths, or comprising two or more of the second semiconductor laser which emit light having substantially same colors with a second color different from the first color and have different dominant emission wavelengths.

14. The display device of claim 13 , further comprising a third semiconductor laser, wherein
a dominant emission wavelength of the third semiconductor laser is greater than or equal to 600 nm and less than or equal to 650 nm.

Assignees

• Japan Display Inc

Inventors

• Asakawa Youichi
• Onoda Ken
• FUKUMA Toshihiko
• Komura Shinichi

Classifications

• G02F1/133621

  providing coloured light (G02F1/133617, G02F1/133533 take precedence) · CPC title

• G02B27/48 Primary

  Laser speckle optics · CPC title

• H01S5/4093

  Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion · CPC title

• H01S5/3013

  AIIIBV compounds · CPC title

• H01S5/347

  in AIIBVI compounds, e.g. ZnCdSe- laser · CPC title