Carrier for Raman spectroscopy and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-10429308-B2
Application number	US-201715815811-A
Country	US
Kind code	B2
Filing date	Nov 17, 2017
Priority date	Jul 24, 2017
Publication date	Oct 1, 2019
Grant date	Oct 1, 2019

Abstract

A carrier for Raman spectroscopy comprising: a substrate having a first metal surface; a plurality of graphene islands disposed on the substrate, wherein parts of the neighboring graphene islands are not connected and thereby form a plurality of gaps between the graphene islands; and a plurality of second metal particles disposed at the gaps between the graphene islands.

First claim

What is claimed is:

1. A carrier for Raman spectroscopy comprising:
a substrate having a first metal surface;
a plurality of graphene islands disposed on the substrate,
wherein parts of the neighboring graphene islands are not connected and thereby form a plurality of gaps between the graphene islands; and
a plurality of second metal particles disposed at the gaps between the graphene islands.

2. The carrier according to claim 1 , wherein the graphene islands are graphene nano-islands, and the second metal particles are silver nanoparticles or gold nanoparticles.

3. The carrier according to claim 1 , wherein the carrier is a copper substrate, a nickel substrate, a platinum substrate, a palladium substrate, a ruthenium substrate, an iridium substrate, a cobalt substrate, an alloy substrate, a quartz substrate comprising the first metal surface, a glass substrate comprising the first metal surface, a third metal substrate comprising the first metal surface, a silicon substrate comprising the first metal surface, or a silicon dioxide substrate comprising the first metal surface.

4. The carrier according to claim 1 , wherein the first metal is copper, nickel, platinum, palladium, ruthenium, iridium, or cobalt.

5. The carrier according to claim 1 , wherein the gaps between the graphene islands are in a range of 3 nm to 200 nm.

6. The carrier according to claim 1 , wherein the second metal is gold, silver, or a metal with higher chemical inertness than the first metal.

7. A method of manufacturing a carrier for Raman spectroscopy, comprising steps of:
(1-A) providing a substrate having a first metal surface;
(1-B) forming a plurality of graphene islands on the substrate, wherein parts of the neighboring graphene islands are not connected and thereby form a plurality of gaps between the graphene islands; and
(1-C) forming a plurality of second metal particles at the gaps between the graphene islands.

8. The method according to claim 7 , wherein the graphene islands are graphene nano-islands, and the second metal particles are silver nanoparticles or gold nanoparticles.

9. The method according to claim 7 , wherein the substrate in the step (1-A) is a copper substrate, a nickel substrate, a platinum substrate, a palladium substrate, a ruthenium substrate, an iridium substrate, a cobalt substrate, an alloy substrate, a quartz substrate comprising the first metal surface, a glass substrate comprising the first metal surface, a third metal substrate comprising the first metal surface, a silicon substrate comprising the first metal surface, or a silicon dioxide substrate comprising the first metal surface.

10. The method according to claim 7 , wherein the first metal in the step (1-A) is copper, nickel, platinum, palladium, ruthenium, iridium, or cobalt.

11. The method according to claim 7 , wherein the plurality of graphene islands in the step (1-B) are formed by thermal chemical vapor deposition or microwave plasma enhanced chemical vapor deposition.

12. The method according to claim 11 , wherein the plurality of graphene islands in the step (1-B) are formed by thermal chemical deposition, and precursor gases of the thermal chemical deposition are hydrogen and methane.

13. The method according to claim 12 , wherein a flow rate ratio of hydrogen/methane is 0.5-10:2-20 sccm and the temperature is in a range of 800° C.′-1040° C. in the step (1-B).

14. The method according to claim 13 , wherein the hydrogen reacts with the methane for 30 seconds to 3 minutes in the step (1-B).

15. The method according to claim 7 , wherein the gaps between the graphene islands are in a range of 3 nm to 200 nm.

16. The method according to claim 7 , wherein the second metal in the step (1-C) is gold, silver, or a metal with higher chemical inertness than the first metal.

17. The method according to claim 7 , wherein the second metal particles in the step (1-C) are formed by selective deposition with a solution comprising the second metal.

18. The method according to claim 17 , wherein the solution comprising the second metal in the step (1-C) is a silver nitrate or chloroauric acid solution.

19. The method according to claim 18 , wherein the solution comprising the second metal in the step (1-C) is in a range of 1 mM to 10 mM silver nitrate solution or 0.5 mM to 10 mM chloroauric acid solution.

20. The method according to claim 18 , wherein a reaction time in the step (1-C) is in a range of 10 seconds to 150 seconds.

21. The method according to claim 7 , wherein the step (1-B) further comprises step (2-C) of transferring the graphene islands on to a second substrate having the first metal surface.

22. The method according to claim 21 , the second substrate is plastic, paper, aluminum, glass or wood.

Assignees

• Univ Nat Cheng Kung

Inventors

• Tzeng Yon-Hua
• Chen Ying-Ren

Classifications

• C23C16/0218

  in a reactive atmosphere (C23C16/0227 takes precedence) · CPC title

• C23C16/26

  Deposition of carbon only · CPC title

• G01N21/658 Primary

  enhancement Raman, e.g. surface plasmons · CPC title

• C23C16/511

  using microwave discharges · CPC title