Alumina sintered body and base substrate for optical device

Patent metadata

Field	Value
Publication number	US-10427949-B2
Application number	US-201815909002-A
Country	US
Kind code	B2
Filing date	Mar 1, 2018
Priority date	Sep 30, 2015
Publication date	Oct 1, 2019
Grant date	Oct 1, 2019

Abstract

An alumina sintered body of the present invention has a degree of c-plane orientation of 5% or more, which is determined by a Lotgering method using an X-ray diffraction profile in a range of 2θ=20° to 70° obtained under X-ray irradiation, and an XRC half width of 15.0° or less in rocking curve measurement, an F content of less than 0.99 mass ppm when measured by D-SIMS, a crystal grain diameter of 15 to 200 μm, and 25 or less pores having a diameter of 0.2 μm to 1.0 μm when a photograph of a viewing area 370.0 μm in a vertical direction and 372.0 μm in a horizontal direction taken at a magnification factor of 1000 is visually observed.

First claim

What is claimed is:

1. An alumina sintered body having:
a degree of c-plane orientation of 5% or more, which is determined by a Lotgering method using an X-ray diffraction profile in a range of 2θ=20° to 70° obtained under X-ray irradiation, and an XRC half width of 15.0° or less in rocking curve measurement;
an F content of less than 0.99 mass ppm when measured by D-SIMS;
a crystal grain diameter of 15 to 200 μm; and
25 or less pores having a diameter of 0.2 μm to 1.0 μm when a photograph of a viewing area 370.0 μm in a vertical direction and 372.0 μm in a horizontal direction taken at a magnification factor of 1000 is visually observed.

2. The alumina sintered body according to claim 1 ,
wherein, the F content is 0.1 mass ppm or less.

3. The alumina sintered body according to claim 1 ,
wherein, the crystal grain diameter is 20 to 200 μm.

4. The alumina sintered body according to claim 1 ,
wherein, the number of the pores is 15 or less.

5. The alumina sintered body according to claim 1 ,
wherein, the F content is 0.1 mass ppm or less,
the crystal grain diameter is 20 to 200 μm, and
the number of the pores is 10 or less.

6. The alumina sintered body according to claim 5 ,
wherein, the degree of c-plane orientation is 60% or more, and the XRC half width is 5.0° or less,
the crystal grain diameter is 40 to 95 μm, and
the number of the pores is 7 or less.

7. The alumina sintered body according to claim 6 ,
wherein, the crystal grain diameter is 45 to 95 μm, and
the number of the pores is 5 or less.

8. The alumina sintered body according to claim 7 ,
wherein, the degree of c-plane orientation is 96% or more, and the XRC half width is 2.6° or less, and
the number of the pores is 3 or less.

9. The alumina sintered body according to claim 1 ,
wherein, the alumina sintered body having a thickness of 0.5 mm has an in-line transmittance of 78% or more at 300 to 1000 nm.

10. A base substrate for optical device, comprising the alumina sintered body according to claim 1 .

Assignees

• Ngk Insulators Ltd

Inventors

• Matsushima Kiyoshi
• Watanabe Morimichi
• Sato Kei
• Nanataki Tsutomu

Classifications

• C04B2235/6586

  Processes characterised by the flow of gas · CPC title

• C04B2235/724

  Halogenide content · CPC title

• C04B35/638

  Removal thereof · CPC title

• C04B2235/5445

  submicron sized, i.e. from 0,1 to 1 micron · CPC title

• C04B2235/787

  Oriented grains · CPC title