Magnetoresistive element and magnetic memory
US-2016197266-A1 · Jul 7, 2016 · US
Spintronics element
US10424725B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10424725-B2 |
| Application number | US-201816013093-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 20, 2018 |
| Priority date | Dec 25, 2015 |
| Publication date | Sep 24, 2019 |
| Grant date | Sep 24, 2019 |
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Abstract
Official abstract text for this publication.
A spintronics element including a ferromagnetic layer containing boron, and a diffusion stopper film covering a side face of the ferromagnetic layer partially or entirely, the side face in direct contact with diffusion stopper film, so as to prevent out-diffusion of the boron contained in the ferromagnetic layer. The diffusion stopper film contains boron at a concentration higher than a concentration of the boron in a portion of the ferromagnetic layer where the ferromagnetic layer contacts the diffusion stopper film.
First claim
Opening claim text (preview).
What is claimed is: 1. A spintronics element, comprising: a ferromagnetic layer containing boron; and a diffusion stopper film covering a side face of the ferromagnetic layer partially or entirely, the side face in direct contact with diffusion stopper film, so as to prevent out-diffusion of the boron contained in the ferromagnetic layer, the diffusion stopper film containing boron at a concentration higher than a concentration of the boron in a portion of the ferromagnetic layer where the ferromagnetic layer contacts the diffusion stopper film. 2. The spintronics element according to claim 1 , wherein the diffusion stopper film is free of nitrogen. 3. The spintronics element according to claim 1 , further comprising a magnetic tunnel junction element having a recording layer and a reference layer each including the ferromagnetic layer, and an insulating layer disposed between the recording layer and the reference layer, wherein the diffusion stopper film covers a side face of the magnetic tunnel junction element. 4. The spintronics element according to claim 1 , further comprising a magnetic tunnel junction element having a reference layer, a recording layer including the ferromagnetic layer, and an insulating layer disposed between the recording layer and the reference layer, wherein the diffusion stopper film covers a side face of the recording layer. 5. The spintronics element according to claim 1 , further comprising one of a tunnel magnetoresistance device, a tunnel magnetoresistance memory device, a spin Hall effect device, an inverse spin Hall effect device, a domain wall motion memory device or a spin torque high frequency device. 6. A spintronics element, comprising: a ferromagnetic layer containing boron; and a diffusion stopper film covering a side face of the ferromagnetic layer partially or entirely so as to prevent out-diffusion of the boron contained in the ferromagnetic layer, the diffusion stopper film being disposed so as to prevent nitrogen external to the spintronics device from entering the spintronics element. 7. The spintronics element according to claim 6 , wherein the diffusion stopper film contains boron at a concentration higher than a concentration of boron contained in a portion of the ferromagnetic layer contacting the diffusion stopper film. 8. The spintronics element according to claim 6 , wherein the diffusion stopper film is free of nitrogen. 9. The spintronics element according to claim 6 , further comprising a magnetic tunnel junction element having a recording layer and a reference layer each including the ferromagnetic layer, and an insulating layer disposed between the recording layer and the reference layer, wherein the diffusion stopper film covers a side face of the magnetic tunnel junction element. 10. The spintronics element according to claim 6 , further comprising a magnetic tunnel junction element having a reference layer, a recording layer including the ferromagnetic layer, and an insulating layer disposed between the recording layer and the reference layer, wherein the diffusion stopper film covers a side face of the recording layer. 11. The spintronics element according to claim 6 , further comprising one of a tunnel magnetoresistance device, a tunnel magnetoresistance memory device, a spin Hall effect device, an inverse spin Hall effect device, a domain wall motion memory device or a spin torque high frequency device.
Assignees
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Classifications
Spin-exchange-coupled multilayers, e.g. nanostructured superlattices {(applying spin-exchange-coupled multilayers to substrates H01F41/302)} · CPC title
Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect · CPC title
- H01F10/3254Primary
the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US10424725B2 cover?
- A spintronics element including a ferromagnetic layer containing boron, and a diffusion stopper film covering a side face of the ferromagnetic layer partially or entirely, the side face in direct contact with diffusion stopper film, so as to prevent out-diffusion of the boron contained in the ferromagnetic layer. The diffusion stopper film contains boron at a concentration higher than a concent…
- Who is the assignee on this patent?
- Univ Tohoku
- What technology area does this patent fall under?
- Primary CPC classification H01F10/3254. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 24 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).