Method of making piezoelectric film, method of making piezoelectric element, liquid discharge head, and image forming apparatus
US-2016023466-A1 · Jan 28, 2016 · US
Piezoelectric film, piezoelectric device, and method for making piezoelectric film
US10424718B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10424718-B2 |
| Application number | US-201615267241-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 16, 2016 |
| Priority date | Sep 25, 2015 |
| Publication date | Sep 24, 2019 |
| Grant date | Sep 24, 2019 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A method for producing a piezoelectric film includes forming a metal film, recrystallizing a portion of the metal film by heating, forming an amorphous film of piezoelectric material on the metal film; and heating the amorphous film at a position of the recrystallized portion of the metal film.
First claim
Opening claim text (preview).
What is claimed is: 1. A piezoelectric film comprising: a metal film having a crystalline quality; and a film having a crystalline quality and formed on the metal film to cover a first area of the metal film, wherein the metal film has the first area and a second area, the first area being covered by the film having a crystalline quality, the second area being not covered by the film having a crystalline quality, and wherein the first area has a recrystallized structure while the second area has a non-recrystallized structure, such that a 2θ position of an X-ray diffraction peak of the first area is different from a 2θ position of an X-ray diffraction peak of the second area. 2. The piezoelectric film according to claim 1 , wherein the 2θ position of the X-ray diffraction peak of the first area is higher than the 2θ position of the X-ray diffraction peak of the second area. 3. The piezoelectric film according to claim 1 , wherein the film having a crystalline quality is crystalized on the metal film. 4. The piezoelectric film according to claim 1 , wherein the film having a crystalline quality is an oxide film. 5. The piezoelectric film according to claim 1 , wherein the film having a crystalline quality is made of piezoelectric material. 6. The piezoelectric film according to claim 1 , wherein the film having a crystalline quality is made of ABO 3 piezoelectric material. 7. A piezoelectric device comprising the piezoelectric film of claim 1 .
Assignees
Inventors
Classifications
- H01L41/081Primary
Electricity · mapped topic
Electricity · mapped topic
Lead-zirconium titanate [PZT] based · CPC title
by melting · CPC title
using intermediate layers, e.g. for growth control · CPC title
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US10424718B2 cover?
- A method for producing a piezoelectric film includes forming a metal film, recrystallizing a portion of the metal film by heating, forming an amorphous film of piezoelectric material on the metal film; and heating the amorphous film at a position of the recrystallized portion of the metal film.
- Who is the assignee on this patent?
- Chen Xianfeng, Ricoh Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01L41/081. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 24 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).