Electrical storage system comprising a disc-shaped discrete element, discrete element, method for the production thereof, and use thereof

Patent metadata

Field	Value
Publication number	US-10418658-B2
Application number	US-201715610707-A
Country	US
Kind code	B2
Filing date	Jun 1, 2017
Priority date	Dec 1, 2014
Publication date	Sep 17, 2019
Grant date	Sep 17, 2019

Abstract

An electrical storage system is provided that has a thickness of less than 2 mm, which includes at least one sheet-type discrete element. The sheet-type discrete element exhibits high resistance against an attack of transition metals or transition metal ions, in particular titanium, wherein the sheet-type discrete element contains titanium. The invention also relates to a sheet-type discrete element for use in an electrical storage system, which exhibits high resistance to the attack of transition metals or of transition metal ions, in particular titanium.

First claim

What is claimed is:

1. A sheet-type discrete element comprising a composition, in wt %, of:
SiO 2 30 to 85,
B 2 O 3 3 to 20,
Al 2 O 3 0 to 15,
Na 2 O 3 to 15,
K 2 O 3 to 15,
ZnO 0 to 12,
TiO 2 greater than or equal to 2 to 10, and
CaO 0 to 0.1; and
at least one surface that is inert and/or permeable to a reduced degree and/or impermeable with respect to materials coming into contact with the at least one surface.

2. The sheet-type discrete element as claimed in claim 1 , further comprising a thickness variation of not more than 25 μm based on wafer or substrate sizes in a range of >100 mm in diameter.

3. The sheet-type discrete element as claimed in claim 1 , further comprising a thickness of less than 2 mm.

4. The sheet-type discrete element as claimed in claim 1 , further comprising a thickness of not more than 100 μm.

5. The sheet-type discrete element as claimed in claim 1 , further comprising a water vapor transmission rate (WVTR) of <10 −3 g/(m 2 ·d).

6. The sheet-type discrete element as claimed in claim 1 , further comprising a specific electrical resistance at a temperature of 350° C. and at alternating current with a frequency of 50 Hz of greater than 1.0*10 6 Ohm·cm.

7. The sheet-type discrete element as claimed in claim 1 , further comprising a maximum load temperature θ Max of at least 400° C.

8. The sheet-type discrete element as claimed in claim 1 , further comprising a coefficient of linear thermal expansion α in a range from 2.0*10 −6 /K to 10*10 −6 /K.

9. The sheet-type discrete element as claimed in claim 1 , further comprising a coefficient of linear thermal expansion α in a range from 3.0*10 −6 /K to 8.0*10 −6 /K.

10. The sheet-type discrete element as claimed in claim 1 , comprising a product of maximum load temperature (θ Max ) and a coefficient of linear thermal expansion (α) of 600·10 −6 ≤θ Max ·α≤8000·10 −6 .

11. The sheet-type discrete element as claimed in claim 1 , comprising a product of maximum load temperature (θ Max ) and a coefficient of linear thermal expansion (α) of 800·10 −6 ≤θ Max ·α≤5000·10 −6 .

12. The sheet-type discrete element as claimed in claim 1 , wherein the at least one surface is designed as a barrier layer.

13. The sheet-type discrete element as claimed in claim 12 , wherein the barrier layer is a barrier against a diffusion of metals.

14. The sheet-type discrete element as claimed in claim 12 , wherein the barrier layer is a barrier against a diffusion of transition metals.

15. The sheet-type discrete element as claimed in claim 12 , wherein the barrier layer is formed by doping or overdoping with at least one alkali metal and/or transition metals.

16. The sheet-type discrete element as claimed in claim 1 , wherein the composition is a glass.

17. A sheet-type discrete element comprising a composition, in wt %, of:
SiO 2 30 to 85,
B 2 O 2 3 to 20,
Al 2 O 3 0 to 15,
Na 2 O 3 0 to 15,
K 2 O 3 to 15,
ZnO 0 to 12,
TiO 2 greater than or equal to 2 to 10, and
CaO 0 to 0.1, wherein the sheet-type discrete element is configured for a use elected from the group consisting of a substrate in an electrical storage system, a superstrate in an electrical storage system, and a cover in an electrical storage system.

18. An electrical storage system, comprising:
at least one sheet-type discrete element having a thickness of less than 2 mm and a composition, in wt %, of:
SiO 2 30 to 85,
B 2 O 3 3 to 20,
Al 2 O 3 0 to 15,
Na 2 O 3 to 15,
K 2 O 3 to 15,
ZnO 0 to 12,
TiO 2 greater than or equal to 2 to 10, and
CaO 0 to 0.1,
wherein the at least one sheet-type discrete element exhibits high resistance against an attack of transition metals or transition metal ions, and
wherein the titanium transition metals or transition metal ions comprise titanium or titanium ions.

19. An electrical storage system, comprising:
at least one sheet-type discrete element having a thickness of less than 2 mm and a composition, in wt %, of:
SiO 2 30 to 85,
B 2 O 3 3 to 20,
Al 2 O 3 0 to 15,
Na 2 O 3 to 15,
K 2 O 3 to 15,
ZnO 0 to 12,
TiO 2 greater than or equal to 2 to 10, and
CaO 0 to 0.1,
wherein the at least one sheet-type discrete element exhibits high resistance against an attack of transition metals or transition metal ions; and
at least one surface of the at least one sheet-type discrete element is inert and/or permeable to a reduced degree and/or impermeable to materials coming into contact with the at least one surface.

20. The electrical storage system as claimed in claim 19 , wherein the at least one surface is a barrier layer.

21. The electrical storage system as claimed in claim 20 , wherein the barrier layer is a barrier against a diffusion of metals.

22. The electrical storage system as claimed in claim 20 , wherein the barrier layer is a barrier against a diffusion of transition metals.

23. The electrical storage system as claimed in claim 20 , wherein the barrier layer is formed by doping or overdoping with at least one alkali metal and/or a transition metal.

24. The electrical storage system as claimed in claim 20 , wherein the barrier layer is a barrier against a diffusion of titanium and/or titanium ions.

Assignees

• Schott Ag

Inventors

• Peuchert Ulrich
• Liebald Rainer
• Kunze Miriam
• Damm Thorsten
• Ottermann Clemens
• Schultz Nikolaus

Classifications

• C03C3/085

  containing an oxide of a divalent metal · CPC title

• H01M50/141

  for protecting against humidity · CPC title

• H01M50/133

  Thickness · CPC title

• H01M50/117

  Inorganic material · CPC title

• C03C3/091

  containing aluminium · CPC title