Carbon nanotube array

US10418557B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10418557-B2
Application numberUS-201815978266-A
CountryUS
Kind codeB2
Filing dateMay 14, 2018
Priority dateMay 17, 2017
Publication dateSep 17, 2019
Grant dateSep 17, 2019

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A carbon nanotube array with equal or other ratio of semiconductive to conductive elements in integrated form including: a plurality of carbon nanotubes arranged in an array, wherein each carbon nanotube includes a semiconducting carbon nanotube segment and a metallic carbon nanotube segment, and the semiconducting carbon nanotube segment and the metallic carbon nanotube segment are connected with each other.

First claim

Opening claim text (preview).

What is claimed is: 1. A carbon nanotube array comprising: a plurality of carbon nanotubes, the plurality of carbon nanotubes arranged in an array, wherein each carbon nanotube comprises a semiconducting carbon nanotube segment and a metallic carbon nanotube segment, and the semiconducting carbon nanotube segment and the metallic carbon nanotube segment are connected to each other and form an integrated structure. 2. The carbon nanotube array as claimed in claim 1 , wherein the semiconducting carbon nanotube segment and the metallic carbon nanotube segment are connected by a Schottky barrier. 3. The carbon nanotube array as claimed in claim 1 , wherein each carbon nanotube consists of two metallic carbon nanotube segments and a single semiconducting carbon nanotube segment between the two metallic carbon nanotube segments. 4. The carbon nanotube array as claimed in claim 1 , wherein each carbon nanotube consists of two semiconducting carbon nanotube segments and a single metallic carbon nanotube segment between the two semiconducting carbon nanotube segments. 5. The carbon nanotube array as claimed in claim 1 , wherein each carbon nanotube comprises a plurality of semiconducting carbon nanotube segments and a plurality of metallic carbon nanotube segments, the semiconducting carbon nanotube segments alternating with the metallic carbon nanotube segments. 6. The carbon nanotube array as claimed in claim 1 , wherein the plurality of carbon nanotubes are divided into a first portion of carbon nanotubes and a second portion of carbon nanotubes; each carbon nanotube consists of two metallic carbon nanotube segments and a semiconducting carbon nanotube segment between the two metallic carbon nanotube segments in the first part of carbon nanotubes; each carbon nanotube consists of one metallic carbon nanotube segment, a first semiconducting carbon nanotube segment and a second semiconducting carbon nanotube segment between the metallic carbon nanotube segment and the first semiconducting carbon nanotube segment in the second part of carbon nanotubes. 7. The carbon nanotube array as claimed in claim 1 , wherein the plurality of carbon nanotubes are divided into a third portion of carbon nanotubes and a fourth portion of carbon nanotubes; in the third portion of carbon nanotubes, each carbon nanotube consists of two semiconducting carbon nanotube segments and one metallic carbon nanotube segment between the two semiconducting carbon nanotube segments; in the fourth portion of carbon nanotubes, each carbon nanotube consists of one semiconducting carbon nanotube segment, a first metallic carbon nanotube segment and a second metallic carbon nanotube segment between the first metallic carbon nanotube segment and the semiconducting carbon nanotube segment. 8. The carbon nanotube array as claimed in claim 1 , wherein the plurality of carbon nanotubes are single-walled carbon nanotubes, and a diameter of the single-walled carbon nanotubes is less than 2 nanometers. 9. The carbon nanotube array as claimed in claim 8 , wherein the diameter of the single-walled carbon nanotubes is in a range of 1.2 nanometers to 1.5 nanometers. 10. The carbon nanotube array as claimed in claim 1 , wherein the quantity density of the plurality of carbon nanotubes is greater than 3/μm. 11. The carbon nanotube array as claimed in claim 1 , wherein the quantity density of the plurality of carbon nanotubes is greater than 6/μm. 12. A carbon nanotube array comprising: a carbon nanotube, wherein the at least one carbon nanotube consists of a plurality of semiconducting carbon nanotube segments and a plurality of metallic carbon nanotube segments, the semiconducting carbon nanotube segments alternating with the metallic carbon nanotube segments. 13. The carbon nanotube array as claimed in claim 12 , wherein the carbon nanotubes are single-walled carbon nanotubes, and a diameter of the single-walled carbon nanotubes is less than 2 nanometers. 14. The carbon nanotube array as claimed in claim 13 , wherein the diameter of the single-walled carbon nanotubes is in a range of 1.2 nanometers to 1.5 nanometers. 15. The carbon nanotube array as claimed in claim 1 , wherein the semiconducting carbon nanotube segment is grown from the metallic carbon nanotube segment, or the metallic carbon nanotube segment is grown from the semiconducting carbon nanotube segment. 16. A carbon nanotube array comprising: a plurality of carbon nanotubes, the plurality of carbon nanotubes arranged in an array, wherein each of the carbon nanotubes consists of two metallic carbon nanotube segments and a single semiconducting carbon nanotube segment between the two metallic carbon nanotube segments, each of the two metallic carbon nanotube segments and the single semiconducting carbon nanotube segment are connected to each other and form an integrated structure; or each of the carbon nanotubes consists of two semiconducting carbon nanotube segments and a single metallic carbon nanotube segment between the two semiconducting carbon nanotube segments, each of the two semiconducting carbon nanotube segments and the single metallic carbon nanotube segment are connected to each other and form an integrated structure.

Assignees

Inventors

Classifications

  • defined by measured data other than those specified in group C01P2002/70 · CPC title

  • Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

  • Manufacturing processes for forming specific nanostructures not provided for in groups B82B3/0014 - B82B3/0033 · CPC title

  • Array or network of similar nanostructural elements · CPC title

  • Manufacture or treatment of nanostructures · CPC title

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What does patent US10418557B2 cover?
A carbon nanotube array with equal or other ratio of semiconductive to conductive elements in integrated form including: a plurality of carbon nanotubes arranged in an array, wherein each carbon nanotube includes a semiconducting carbon nanotube segment and a metallic carbon nanotube segment, and the semiconducting carbon nanotube segment and the metallic carbon nanotube segment are connected w…
Who is the assignee on this patent?
Univ Tsinghua, Hon Hai Prec Ind Co Ltd
What technology area does this patent fall under?
Primary CPC classification B82B1/008. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Sep 17 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).