Magnetic sensor

Patent metadata

Field	Value
Publication number	US-10418546-B2
Application number	US-201715835628-A
Country	US
Kind code	B2
Filing date	Dec 8, 2017
Priority date	Mar 13, 2017
Publication date	Sep 17, 2019
Grant date	Sep 17, 2019

Abstract

A magnetic sensor is provided which can improve density of magnetoresistance effect elements without narrowing the wiring pitch. A plurality of element array layers 10 are stacked one on another, each of the element array layers including a plurality of magnetoresistance effect elements 1 arranged in parallel in an in-plane direction, and magnetoresistance effect elements 1 in the plurality of element array layers 10 are connected in series to each other.

First claim

What is claimed is:

1. A magnetic sensor comprising a plurality of element array layers that are stacked one on another, each of said element array layers comprising a plurality of magnetoresistance effect elements arranged in parallel in an in-plane direction, wherein
said magnetoresistance effect elements are arranged in two dimensions in each element array layer,
said magnetoresistance effect elements in said plurality of element array layers are the same kind and are connected in series to each other,
the magnetic sensor further comprises a plurality of multi-layered elements in which said magnetoresistance effect elements in said element array layers are connected in series to said magnetoresistance effect elements that are adjacent in a direction in which said element array layers are stacked one on another, and
said multi-layered elements are connected in series to each other.

2. The magnetic sensor according to claim 1 , further comprising an upper electrode layer and a lower electrode layer that are arranged at both ends of each of said magnetoresistance effect elements in the direction in which said element array layers are stacked one on another, wherein said upper electrode layer and said lower electrode layer located between said adjacent magnetoresistance effect elements are shared among said multi-layered elements.

3. The magnetic sensor according to claim 1 , wherein
each of said magnetoresistance effect elements comprises a fixed magnetization layer having a fixed magnetization orientation, a free layer having a magnetization orientation which changes depending on an external magnetic field and a non-magnetic layer disposed between said fixed magnetization layer and said free layer, and
magnetization orientations of said fixed magnetization layers of said plurality of magnetoresistance effect elements are uniform.

4. The magnetic sensor according to claim 1 , further comprising yokes that are disposed in the vicinity of said magnetoresistance effect elements.

5. The magnetic sensor according to claim 4 , wherein said magnetoresistance effect elements are arranged so as to sandwich said yokes in a direction crossing the in-plane direction without intersecting the in-plane direction orthogonally.

6. The magnetic sensor according to claim 4 , wherein said yokes comprise two interposing yokes that are arranged so as to sandwich said magnetoresistance effect elements in a direction crossing the in-plane direction without intersecting the in-plane direction orthogonally.

7. The magnetic sensor according to claim 6 , wherein
said interposing yoke is provided for each of said magnetoresistance effect elements in said plurality of element array layers, and
said interposing yokes provided between the magnetoresistance effect elements adjacent in a direction crossing the in-plane direction without intersecting the in-plane direction orthogonally are provided between said two adjacent element array layers.

8. The magnetic sensor according to claim 7 , wherein said interposing yokes provided between the adjacent magnetoresistance effect elements in the direction crossing the in-plane direction without intersecting the in-plane direction orthogonally are shared among said adjacent magnetoresistance effect elements.

9. The magnetic sensor according to claim 4 , wherein said yokes comprise side yokes that are arranged on both sides of said magnetoresistance effect elements in the in-plane direction.

10. The magnetic sensor according to claim 9 , further comprising an upper electrode layer and a lower electrode layer that are arranged at both ends of each magnetoresistance effect element in the direction in which said element array layers are stacked one on another, wherein said side yokes are arranged between said upper electrode layer and said lower electrode layer.

11. A magnetic sensor comprising a plurality of element array layers that are stacked one on another, each of said element array layers comprising a plurality of magnetoresistance effect elements arranged in parallel in an in-plane direction, wherein said magnetoresistance effect elements in said plurality of element array layers are connected in series to each other, wherein
yokes are disposed in the vicinity of said magnetoresistance effect elements,
said yokes comprise two interposing yokes that are arranged so as to sandwich said magnetoresistance effect elements in a direction crossing the in-plane direction without intersecting the in-plane direction orthogonally,
said interposing yoke is provided for each of said magnetoresistance effect elements in said plurality of element array layers, and
said interposing yokes provided between the magnetoresistance effect elements adjacent in a direction crossing the in-plane direction without intersecting the in-plane direction orthogonally are provided between said two adjacent element array layers and are shared among said adjacent magnetoresistance effect elements.

12. A magnetic sensor comprising a plurality of element array layers that are stacked one on another, each of said element array layers comprising a plurality of magnetoresistance effect elements arranged in parallel in an in-plane direction, wherein said magnetoresistance effect elements in said plurality of element array layers are connected in series to each other, wherein
yokes are disposed in the vicinity of said magnetoresistance effect elements,
said yokes comprise side yokes that are arranged on both sides of said magnetoresistance effect elements in the in-plane direction,
an upper electrode layer and a lower electrode layer that are arranged at both ends of each magnetoresistance effect element in the direction in which said element array layers are stacked one on another, and
said side yokes are arranged between said upper electrode layer and said lower electrode layer.

Assignees

• Tdk Corp

Inventors

• Hiraki Tetsuya
• Ohta Naoki
• Hirabayashi Hiraku
• Tanaka Yoshiaki

Classifications

• H01L43/02 Primary

  Electricity · mapped topic

• H01L27/22

  Electricity · mapped topic

• H10B61/00 Primary

  Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices · CPC title

• H10N35/80

  Constructional details · CPC title

• H10N35/00 Primary

  Magnetostrictive devices (integrated devices or assemblies of multiple devices H10N39/00) · CPC title