Adjustment of qubit frequency through annealing

Patent metadata

Field	Value
Publication number	US-10418540-B2
Application number	US-201715824438-A
Country	US
Kind code	B2
Filing date	Nov 28, 2017
Priority date	Nov 28, 2017
Publication date	Sep 17, 2019
Grant date	Sep 17, 2019

Abstract

An embodiment includes a method and device for forming a multi-qubit chip. The method includes forming a plurality of qubits on a chip, where each qubit comprises a Josephson junction. The method includes annealing one or more Josephson junctions. Annealing is performed by one or more of a plurality of laser emission sources on a planar lightwave circuit. Each of the laser emission sources is located above each qubit.

First claim

What is claimed is:

1. A method for forming a multi-qubit chip, the method comprising:
forming a plurality of qubits on a chip, wherein each qubit comprises a Josephson junction;
annealing one or more Josephson junctions, wherein annealing is performed by one or more of a plurality of laser discharge structures sources on a planar lightwave circuit, and wherein each of the laser discharge structures is located above each qubit.

2. The method of claim 1 , wherein a laser discharge structure of the plurality of laser discharge structures provides a laser emission wavelength of about 532 nm.

3. The method of claim 1 , wherein a laser discharge structure of the plurality of laser discharge structures provides a laser intensity of about 0.2 W to about 2 W.

4. The method of claim 1 , wherein the qubit further comprises capacitive plates located on each side of the Josephson junction, and wherein each laser discharge structure focuses a laser emission toward the Josephson junction, and wherein the laser emission avoids the capacitive plates.

5. The method of claim 1 , further comprising performing annealing through an intermediate chip.

6. The method of claim 1 , wherein a laser discharge structure of the plurality of laser discharge structures is a vertical grating coupler.

7. The method of claim 1 , wherein a laser power source is connected to a laser emission source by a mode converter and a laser path.

8. The method of claim 7 , wherein a single mode converter is attached, via a single laser path, to a single laser emission source.

9. The method of claim 7 , wherein the mode converter provides power to a plurality of laser emission sources.

10. The method of claim 9 , wherein the laser path is split into a first laser path for a first laser discharge structure and a second laser path for a second discharge structure source using a Mach Zehnder switch.

11. The method of claim 7 , wherein the laser path is an optical fiber.

12. The method of claim 7 , wherein performing annealing causes the resistance of a Josephson junction to increase, wherein the Josephson junction comprises an Al/AlO x /Al structure.

13. The method of claim 7 , wherein performing annealing causes the resistance of an aluminum/aluminum oxide/aluminum Josephson junction to decrease.

Assignees

• IBM

Inventors

• Orcutt Jason S
• Rosenblatt Sami

Classifications

• G02B6/34

  utilising prism or grating {(G02B6/293 takes precedence)} · CPC title

• G02B6/354

  Switching arrangements, i.e. number of input/output ports and interconnection types · CPC title

• H01L39/2493

  Electricity · mapped topic

• H01L39/249 Primary

  Electricity · mapped topic

• H10N60/0884 Primary

  Treatment of superconductor layers by irradiation, e.g. ion-beam, electron-beam, laser beam or X-rays · CPC title