Substrate structure and method for preparing the same

Patent metadata

Field	Value
Publication number	US-10418300-B2
Application number	US-201314915562-A
Country	US
Kind code	B2
Filing date	Nov 4, 2013
Priority date	Aug 30, 2013
Publication date	Sep 17, 2019
Grant date	Sep 17, 2019

Abstract

The present invention relates to a substrate structure in which organic-inorganic hybrid thin films are laminated and a method for preparing the same and more specifically to a substrate structure in which organic-inorganic hybrid thin films are laminated that can be used for light emitters, display devices and solar cell devices wherein the organic-inorganic hybrid thin film including a stable new functional group, an inorganic precursor and an organic precursor are alternately used to afford stability in air and a method for preparing the same.

First claim

The invention claimed is:

1. A substrate structure comprising:
a substrate; and
hybrid organic/inorganic thin films stacked on the substrate, the hybrid organic/inorganic thin films being represented by the following Formula 1:
-[M-X—R1-Y—] m -  [Formula 1]

wherein in Formula 1,
m is 1 or more,
R1 is a substituted or unsubstituted aryl or heteroaryl having a nuclear atomic number of 5-60,
M is selected from the group consisting of Zn, Sn, In, Cd, Ga, Al, Ti, Si, V, Mn, Fe, Co, Cu, Zr, Ru, Mo, Nb, and W,
one of X and Y is O, and the other is S.

2. The substrate structure of claim 1 , wherein a thickness of the hybrid organic/inorganic thin films is from 1 Å to 500 Å.

3. The substrate structure of claim 1 , wherein the following relationship is satisfied when an initial thickness of the hybrid organic/inorganic thin films is set to do, and a thickness of the hybrid organic/inorganic thin films after standing under STP conditions for n hours is set to dn:
0≤( dn/d 0)≤0.1(0≤ n≤ 240),

wherein d0 and dn are measured under STP conditions.

4. The substrate structure comprising functional thin films comprising the hybrid organic/inorganic thin films as claimed in claim 1 and further comprising an oxide layer of a metal selected from the group consisting of Zn, Sn, In, Cd, Ga, Al, Ti, Si, V, Mn, Fe, Co, Cu, Zr, Ru, Mo, Nb, and W, formed on or under the hybrid organic/inorganic thin films.

5. The substrate structure of claim 4 , wherein a thickness of the oxide layer of a metal is from 100 Å to 2,000 Å.

6. The substrate structure of claim 4 , wherein the following relationship is satisfied when an initial thickness of the substrate structure is set to D0, and a thickness of the substrate structure after standing under STP conditions for n hours is set to Dn:
0≤( Dn/D 0)≤0.1(0≤ n≤ 240),

wherein d0 and do are measured under STP conditions.

7. The substrate structure of claim 1 , wherein the substrate is a conductive and transparent substrate selected from the group consisting of ITO, FTO, ZnO, AZO, CdO, and TiO 2 .

8. The substrate structure of claim 1 , wherein the substrate is a polymer substrate selected from the group consisting of a fluoropolymer resin, polyester, polyacrylate, polyamide, polyimide, and polycarbonate.

9. A light-emitting body comprising the substrate structure as claimed in claim 1 .

10. A display apparatus comprising the substrate structure as claimed in claim 1 .

11. A photovoltaic device comprising the substrate structure as claimed in claim 1 .

12. A method of manufacturing a substrate structure as claimed in claim 1 , the method comprising:
(1) forming an inorganic molecular layer on a surface of a substrate using a first precursor compound represented by the following Formula 2:
M(R21)(R22) . . . (R2 n )  [Formula 2]

wherein in Formula 2,
M is selected from the group consisting of Zn, Sn, Cd, Ti, Si, V, Mn, Fe, Co, Cu, Zr, Ru, Mo, Nb, W, In, Ga, Al, and Tl,
n is determined as claimed in an oxidation number of a metal M, and
R21 to R2n are each independently C 1-20 alkyl, C 1-20 alkoxide, a chloride group, a hydroxyl group, an oxyhydroxide group, a nitrate group, a carbonate group, an acetate group, or an oxalate group; and
(2) forming an organic molecular layer on the inorganic molecular layer via a reaction of a second precursor compound represented by the following Formula 3 with the inorganic molecular layer:
R3-S—R4-R5  [Formula 3]

wherein in Formula 3,
R3 is hydrogen, COR6, C 1-20 alkyl, C 5-20 cycloalkyl, or aryl or heteroaryl of nuclear atomic number of 5-60,
R4 is C 1-20 alkyl, C 5-20 cycloalkyl, or aryl or heteroaryl of nuclear atomic number of 5-60,
R5 is at least one selected from the group consisting of a hydroxyl group, a C 1-20 alkoxy group, an ether group, a carboxyl group, COR6, a thiol group, and an amine group, and
R6 is at least one selected from the group consisting of hydrogen, an alkoxy group, an ether group, a carboxyl group, a thiol group, and an amine group.

13. The method of manufacturing a substrate structure of claim 12 , wherein the second precursor compound is represented by the following Formula 4:

wherein in Formula 4, Z is a thiol group, Q is one selected from a thiol group or a hydroxyl group, and Z and Q are at an ortho, meta, or para position.

14. The method of manufacturing a substrate structure as claimed in claim 13 , wherein the second precursor compound is represented by the following Formula 5:

15. The method of manufacturing a substrate structure as claimed in claim 13 , wherein the second precursor compound is represented by the following Formula 6:

16. The method of manufacturing a substrate structure as claimed in claim 12 , further comprising repeatedly conducting (1) and (2).

17. The method of manufacturing a substrate structure as claimed in claim 12 , further comprising forming an oxide layer on a surface of the substrate prior to (1).

18. The method of manufacturing a substrate structure having functional thin films of claim 12 , the method further comprising (3) forming an oxide layer of a metal selected from the group consisting of Zn, Sn, In, Cd, Ga, Al, Ti, Si, V, Mn, Fe, Co, Cu, Zr, Ru, Mo, Nb, and W by an atomic layer deposition method.

19. The method of manufacturing a substrate structure of claim 12 , that comprises repeatedly conducting (1) and (2) n1 times where n1 is 1 or more, and then, (3) n2 times wherein n2 is 1 or more.

20. The method of manufacturing a substrate structure of claim 19 , comprising repeatedly conducting (1) to (3).

Assignees

• Iucf Hyu

Inventors

• Sung Myung Mo
• Han Kyu Seok

Classifications

• H10W74/47

  comprising organic materials, e.g. plastics or resins · CPC title

• H10W74/15

  on active surfaces of flip-chip devices, e.g. underfills · CPC title

• H10W74/012

  of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills · CPC title

• H10W74/147 Primary

  the encapsulations being multilayered · CPC title

• G02F2201/501

  Blocking layers, e.g. against migration of ions · CPC title