Amorphous boron nitride dielectric

Patent metadata

Field	Value
Publication number	US-10418237-B2
Application number	US-201715820803-A
Country	US
Kind code	B2
Filing date	Nov 22, 2017
Priority date	Nov 23, 2016
Publication date	Sep 17, 2019
Grant date	Sep 17, 2019

Abstract

A nanoelectronics structure is disclosed which includes a substrate layer which has least a first surface and also has a thickness of less than 100 nm. The nanoelectronics structure also includes a dielectric layer, which is deposited on the first surface of the substrate layer and has a thickness of less than 100 nm. This dielectric layer is made up of at least 90 mole percent amorphous boron nitride. Also disclosed is a method for forming a dielectric layer on a substrate using pulsed laser deposition.

First claim

What is claimed is:

1. A nanoelectronics structure comprising:
a substrate layer having at least a first surface and having a thickness of less than 100 nm; and
a dielectric layer deposited on the first surface of the substrate layer and having a thickness of less than 100 nm,
wherein the dielectric layer comprises at least 90 mole percent amorphous boron nitride and exhibits a bandgap from about 4.0 eV to about 5.0 eV.

2. The nanoelectronics structure of claim 1 , wherein the dielectric layer comprises at least 95 mole percent amorphous boron nitride.

3. The nanoelectronics structure of claim 1 , wherein the substrate layer has a thickness of less than 20 nm.

4. The nanoelectronics structure of claim 1 , wherein the substrate layer comprises a material selected from the group consisting of silicon substrates, silicon oxide substrates, single-crystalline substrates, poly-crystalline substrates, polymer substrates, metal substrates, and two dimensional substrates.

5. The nanoelectronics structure of claim 1 , wherein the substrate layer comprises a material selected from the group consisting of tungsten, copper, silicon dioxide (SiO 2 ), aluminum oxide (Al 2 O 3 ), molybdenum disulfide (MoS 2 ), graphene, polyethylene terephthalate (PET), and polydimethylsiloxane (PDMS).

6. The nanoelectronics structure of claim 1 , wherein the dielectric layer has a thickness of less than 20 nm.

7. The nanoelectronics structure of claim 1 , wherein the dielectric layer has a thickness of less than 10 nm.

8. The nanoelectronics structure of claim 1 , wherein the dielectric layer exhibits a dielectric constant from about 5.2 to about 6.6.

9. The nanoelectronics structure of claim 1 , wherein the dielectric layer exhibits a bandgap from about 4.3 eV to about 4.7 eV.

10. A nanoelectronics structure comprising:
a substrate layer having at least a first surface and having a thickness of less than 20 nm; and
a dielectric layer deposited on the first surface of the substrate layer and having a thickness of less than 20 nm,
wherein the substrate layer comprises a two-dimensional substrate material selected from the group consisting of molybdenum disulfide (MoS 2 ) and graphene, and
wherein the dielectric layer comprises at least 90 mole percent amorphous boron nitride.

Assignees

• Us Gov Air Force
• Us Air Force

Inventors

• Glavin Nicholas
• Muratore Chris
• Fisher Timothy
• Voevodin Andrey

Classifications

• H10P14/6329 Primary

  using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition · CPC title

• H10P14/68

  Organic materials, e.g. photoresists · CPC title

• H10P14/6938 Primary

  the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides · CPC title

• B82B3/0023

  comprising flexible or deformable elements · CPC title

• B82B3/0038

  Manufacturing processes for forming specific nanostructures not provided for in groups B82B3/0014 - B82B3/0033 · CPC title