Lithographic patterning process and resists to use therein

Patent metadata

Field	Value
Publication number	US-10416555-B2
Application number	US-201515538191-A
Country	US
Kind code	B2
Filing date	Dec 1, 2015
Priority date	Dec 23, 2014
Publication date	Sep 17, 2019
Grant date	Sep 17, 2019

Abstract

A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX 3 , A 2 BX 4 , or ABX 4 , wherein A is a compound containing an NH 3 group, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovsikte material.

First claim

What is claimed is:

1. An EUV lithographic assembly comprising:
(a) a resist film of a perovskite material in the form of nanoparticles, and an organic ligand in admixture with the nanoparticles and binding the nanoparticles, wherein the ligand comprises reactive groups that are capable of dissociating when exposed to EUV radiation, wherein said reactive groups are selected from the group consisting of carboxylic acid groups, phosphonate groups, sulphonyl groups, oxalate groups, carbonate groups, azide groups and nitrite groups, wherein the resist film does not also comprise a polymeric resin, wherein the perovskite material comprises a halide constituent X, and
(b) a lithographic wafer, and
wherein the resist film is disposed on the lithographic wafer.

2. The EUV lithographic assembly of claim 1 , wherein the perovskite material is an organometal-halide perovskite.

3. The EUV lithographic assembly of claim 1 , wherein the perovskite material has a structure having a chemical formula selected from ABX 3 , A 2 BX 4 , or ABX 4 , wherein A is a compound containing an NH 3 group, B is a metal and X is the halide constituent.

4. The EUV lithographic assembly of claim 3 , wherein A is selected from the group consisting of C x H x+2 NH 3 , C 6 H 5 C x H 2x NH 3 , NH 3 C x H 2x NH 3 and NH 2 CHNH 3 , and combinations thereof, with x being an integer in the range from 1 to 5.

5. The EUV lithographic assembly of claim 3 , wherein B is a metal selected from the group consisting of Pb 2+ , Sn 2+ , Cu 2+ ,Mn 2+ , Fe 2+ and mixed-metals thereof.

6. The EUV lithographic assembly of claim 1 , wherein the perovskite material comprises mixtures of the perovskite materials.

7. The EUV lithographic assembly of claim 1 , wherein X is a halide constituent selected from the group consisting of I, Br, F and Cl.

8. The EUV lithographic assembly of claim 1 , wherein the perovskite material is: a methyl ammonium lead-halide perovskite of formula: CH 3 NH 3 PbX 3 , and/or an ethyl ammonium lead-halide perovskite of formula: CH 3 NH 3 PbX 3 ,
wherein the halide constituent is selected from I, Br, or Cl.

9. The EUV lithographic assembly of claim 1 , wherein the perovskite material is selected from the group consisting of CH 3 NH 3 PbI 3 , CH 3 CH 2 NH 3 PbI 3 , CH 3 NH 3 PbBr 3 , CH 3 NH 3 PbI 3 , CH 3 NH 3 PbI 2 Br, CH 3 NH 3 Pb(I (1-x) Br x ) 3 , CH 3 NH 3 PbI 2 Cl, and CH 3 NH 3 PbI (3-x) Cl x ; with x being an integer in the range from 1 to 5.

10. The EUV lithographic assembly of claim 1 , wherein the resist film comprises from about 1 wt % to about 98 wt % perovskite material.

11. The EUV lithographic assembly of claim 1 , wherein the resist film further comprises at least one of a solvent, a surfactant, or other additives.

12. The EUV lithographic assembly of claim 1 , wherein the perovskite material is selected from the group consisting of CH 3 NH 3 PbI 3 , CH 3 CH 2 NH 3 PbI 3 , CH 3 NH 3 PbBr 3 , CH 3 NH 3 PbI 3 , CH 3 NH 3 PbI 2 Br, and CH 3 NH 3 PbI 2 Cl.

13. The EUV lithographic assembly of claim 1 , wherein the perovskite material comprises a sheet of corner-sharing metal-halide octahedral sandwiching layers of organic cations.

14. The EUV lithographic assembly of claim 1 , wherein the organic ligand comprises reactive groups that trap excited valence band electrons and holes in a bound state of electron-hole pairs generating excitons, and wherein exciton energy of the excitons is transferred to the ligand such that a radiative decay rate is slower than an exciton trapping rate.

15. The EUV lithographic assembly of claim 1 , wherein the lithographic wafer is a silicon wafer.

16. The EUV lithographic assembly of claim 1 , wherein the nanoparticles are core-shell nanoparticles comprising the perovskite material in the core.

17. A process to obtain a pattern in a resist film on a lithographic wafer comprising:
applying an EUV lithographic resist composition comprising a perovskite material in the form of nanoparticles and an organic ligand in admixture with the nanoparticles and binding the nanoparticles onto a lithographic wafer to form a film, wherein the perovskite material comprises a halide constituent X, wherein the organic ligand comprises reactive groups that are capable of dissociating when exposed to EUV radiation, wherein said reactive groups are selected from the group consisting of carboxylic acid groups, phosphonate groups, sulphonyl groups, oxalate groups, carbonate groups, azide groups and nitrite groups, and wherein the resist composition does not also comprise a polymeric resin;
baking the film;
exposing the film to high-energy radiation; and
developing the exposed film in a developer.

18. The process of claim 17 , wherein the exposure is carried out by EUV lithography using EUV radiation having a wavelength of 3 to 20 nm.

19. The process of claim 17 , wherein the nanoparticles are core-shell nanoparticles comprising the perovskite material in the core.

20. The process of claim 17 , wherein the lithographic wafer is a silicon wafer.

21. A method for producing an EUV lithographic resist film comprising applying to a lithographic wafer a composition comprising a perovskite material in the form of nanoparticles and an organic ligand in admixture with the nanoparticles and binding the nanoparticles, the organic ligand comprising reactive groups that are capable of dissociating when exposed to EUV radiation, wherein said reactive groups are selected from the group consisting of carboxylic acid groups, phosphonate groups, sulphonyl groups, oxalate groups, carbonate groups, azide groups and nitrite groups, wherein the perovskite material comprises a halide constituent X, wherein the resist composition does not also comprise a polymeric resin and wherein the perovskite material and / or the resist composition is synthesized at room temperature.

22. The method for producing the resist composition of claim 21 , wherein anhydrous starting materials are used in a dry enclosure during the synthesis of the resist composition.

23. The method of claim 21 , wherein the nanoparticles are core-shell nanoparticles comprising the perovskite material in the core.

24. The method of claim 21 , wherein the lithographic wafer is a silicon wafer.

25. An EUV lithographic process for manufacturing an integrated circuit, comprising exposing a film comprising a perovskite material in the form of nanoparticles and an organic ligand comprising reactive groups to EUV radiation and then developing the exposed film with a developer, wherein the organic ligand is in admixture with the nanoparticles and binding the nanoparticles, wherein said reactive groups are selected from the group consisting of carboxylic acid groups, phosphonate groups, sulphonyl groups, oxalate groups, carbonate groups, azide groups and nitrite groups, wherein said perovskite material has a structure with a chemical formula selected from ABX 3 , A 2 BX 4 , ABX 4 , or mixtures of said perovskite materials, wherein A is a compound containing an NH 3 group, B is a metal and X is a halide constituent, and wherein the film is on a lithographic wafer, and wherein the film does not comprise a polymeric resin.

26. The process of claim 25 , wherein the nanoparticles are core-shell nanoparticles comprising the perovskite material in the core.

27. The process of claim 25 , wherein the lithographic wafer is a silicon wafer.

Assignees

• Asml Netherlands Bv

Inventors

• Wuister Sander Frederik
• Yildirim Oktay
• Rispens Gijsbert
• Polyakov Alexey Olegovich

Classifications

• G03F7/039

  Macromolecular compounds which are photodegradable, e.g. positive electron resists (G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023) · CPC title

• G03F7/0047

  characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing · CPC title

• G03F7/0043 Primary

  Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof (G03F7/0044 takes precedence) · CPC title

• G03F7/0045 Primary

  with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title

• G03F7/30

  Imagewise removal using liquid means · CPC title