Microchip structure and treatments for electrochemical detection

Patent metadata

Field	Value
Publication number	US-10416109-B2
Application number	US-201414454659-A
Country	US
Kind code	B2
Filing date	Aug 7, 2014
Priority date	Aug 7, 2013
Publication date	Sep 17, 2019
Grant date	Sep 17, 2019

Abstract

Disclosed herein are processes and devices for use in the electrochemical detection of a target in a sample. For example, silicon or glass surfaces are treated with silanes functionalized with various side chains to tune the surface wetting characteristics.

First claim

The invention claimed is:

1. A process for the manufacture of a biosensing device, the process comprising:
providing a substrate having an electrically conductive lead on a surface thereof;
applying an insulating layer to the substrate and the electrically conductive lead, said insulating layer comprising one or more of silicon dioxide and silicon nitride;
etching an aperture in the insulating layer to expose a portion of the electrically conductive lead onto which a nanostructured microelectrode is to be plated;
oxidizing one or more of the silicon dioxide and the silicon nitride to form oxidized silicon dioxide or oxidized silicon nitride;
allowing one or more of the oxidized silicon dioxide and the oxidized silicon nitride to react with a functionalized silane; and
forming a self-assembled monolayer of the functionalized silane on the insulating layer.

2. The process of claim 1 , wherein the insulating layer comprises a layer of silicon dioxide and a layer of silicon nitride.

3. The process of claim 2 , wherein the layer of silicon dioxide is disposed between the substrate and the layer of silicon nitride.

4. The process of claim 1 , wherein the step of oxidizing one or more of the silicon dioxide and the silicon nitride occurs at a top surface of the insulating layer.

5. The process of claim 1 , wherein the step of oxidizing one or more of the silicon dioxide and the silicon nitride forms a deactivated oxidized silicon dioxide or a deactivated oxidized silicon nitride.

6. The process of claim 1 , wherein a plurality of insulating layers is applied to the substrate.

7. The process of claim 1 , wherein the aperture is etched through the insulating layer.

8. The process of claim 1 , wherein allowing one or more of the oxidized silicon dioxide and the oxidized silicon nitride to react with the functionalized silane includes applying a vacuum.

9. The process of claim 1 , wherein the self-assembled monolayer of a functionalized silane provides a hydrophobic coating.

10. A process for the manufacture of a biosensing device, the process comprising:
providing a substrate having an electrically conductive lead on a surface thereof;
applying an insulating layer to the substrate and the electrically conductive lead, said insulating layer comprising one or more of silicon dioxide and silicon nitride;
etching an aperture in the insulating layer to expose a portion of the electrically conductive lead onto which a nanostructured microelectrode is to be plated;
etching a surface of the insulating layer and a surface of the electrically conductive lead to clean and/or oxidize the surfaces; and
capping the etched surface of the insulating layer with a self-assembled monolayer of functionalized silane.

11. The process of claim 10 , wherein a plurality of insulating layers is applied to the substrate.

12. The process of claim 11 , wherein the aperture is etched through an insulating layer.

13. The process of claim 10 , wherein etching the surface comprises subjecting the surface to plasma etching.

14. The process of claim 10 , wherein the functionalized silane is a trichlorosilane.

15. The process of claim 14 , wherein the trichlorosilane has a functionalized alkyl side chain.

16. The process of claim 15 , wherein the trichlorosilane is trichloro(1H, 1H, 2H, 2H-perfluorooctyl) silane or trichlorododecylsilane.

17. The process of claim 10 , wherein oxidizing the surface occurs during exposure to oxygen plasma.

18. The process of claim 10 , further comprising: plating the nanostructured microelectrode in the aperture.

19. The process of claim 10 , wherein capping the etched surface of the insulating layer with the self-assembled monolayer of functionalized silane includes reacting the functionalized silane under a vacuum with an oxidized surface of the insulating layer.

20. The process of claim 10 , wherein the self-assembled monolayer of a functionalized silane provides a hydrophobic coating.

Assignees

• General Atomics

Inventors

• Jack Graham D
• Hayman Ryan B

Classifications

• B81C1/00206

  Processes for functionalising a surface, e.g. provide the surface with specific mechanical, chemical or biological properties · CPC title

• G01N27/327 Primary

  Biochemical electrodes {, e.g. electrical or mechanical details for in vitro measurements} · CPC title

• B81B1/006

  Microdevices formed as a single homogeneous piece, i.e. wherein the mechanical function is obtained by the use of the device, e.g. cutters · CPC title

• B81C1/00341

  Processes for manufacturing microsystems not provided for in groups B81C1/00023 - B81C1/00261 · CPC title