Polishing composition containing ceria particles and method of use

Patent metadata

Field	Value
Publication number	US-10414947-B2
Application number	US-201615056198-A
Country	US
Kind code	B2
Filing date	Feb 29, 2016
Priority date	Mar 5, 2015
Publication date	Sep 17, 2019
Grant date	Sep 17, 2019

Abstract

The invention provides a chemical-mechanical polishing composition including wet-process ceria particles having a median particle size of about 25 nm to about 150 nm and a particle size distribution of about 300 nm or more, and an aqueous carrier. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon layer, with the polishing composition.

First claim

The invention claimed is:

1. A chemical-mechanical polishing composition comprising:
(a) wet-process ceria particles having a median particle size of about 25 nm to about 150 nm and a particle size distribution of about 300 nm or more, wherein the wet-process ceria particles have a surface that comprises tridentate hydroxyl groups and has a surface coverage of tridentate hydroxyl groups that is about 2.0×10 −5 moles/m 2 or more, and
(b) an aqueous carrier.

2. The chemical-mechanical polishing composition of claim 1 , wherein the wet-process ceria particles have a median particle size of about 40 nm to about 100 nm.

3. The chemical-mechanical polishing composition of claim 1 , wherein the wet-process ceria particles have a median particle size of about 60 nm to about 80 nm.

4. The chemical-mechanical polishing composition of claim 1 , wherein the wet-process ceria particles have a particle size distribution of about 350 nm or more.

5. The chemical-mechanical polishing composition of claim 4 , wherein the wet-process ceria particles have a particle size distribution of about 375 nm or more.

6. The chemical-mechanical polishing composition of claim 1 , wherein the wet-process ceria particles have a surface coverage of tridentate hydroxyl groups that is about 2.0×10 −5 moles/m 2 and about 6.0×10 −5 moles/m 2 .

7. The chemical-mechanical polishing composition of claim 6 , wherein the wet-process ceria particles have a surface coverage of tridentate hydroxyl groups that is about 2.3×10 −5 moles/m 2 or more.

8. The chemical-mechanical polishing composition of claim 1 , wherein a Raman spectrum of the wet-process ceria particles comprises a peak at about 458 cm −1 and a peak at about 583 cm −1 , and wherein the ratio of the intensity of the peak at about 458 cm −1 to the intensity of the peak at about 583 cm −1 is about 100 or less.

9. The chemical-mechanical polishing composition of claim 8 , wherein the ratio of the intensity of the peak at about 458 cm −1 to the intensity of the peak at about 583 cm −1 is about 65 or less.

10. The chemical-mechanical polishing composition of claim 1 , wherein the wet-process ceria particles are present in the polishing composition at a concentration of about 0.1 wt. % to about 1 wt. %.

11. The chemical-mechanical polishing composition of claim 10 , wherein the wet-process ceria particles are present in the polishing composition at a concentration of about 0.2 wt. % to about 0.6 wt. %.

12. The chemical-mechanical polishing composition of claim 1 , further comprising a pH-adjusting agent.

13. The chemical-mechanical polishing composition of claim 12 , wherein the pH-adjusting agent is selected from an alkyl amine, an alcohol amine, a quaternary amine hydroxide, ammonia, and combinations thereof.

14. The chemical-mechanical polishing composition of claim 12 , wherein the pH-adjusting agent is triethanolamine.

15. The chemical-mechanical polishing composition of claim 1 , wherein the pH of the polishing composition is about 1 to about 6.

16. The chemical-mechanical polishing composition of claim 15 , wherein the pH of the polishing composition is about 3.5 to about 5.

17. A method of polishing a substrate comprising:
(i) providing a substrate;
(ii) providing a polishing pad;
(iii) providing the chemical-mechanical polishing composition of claim 1 ;
(iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition; and
(v) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate to abrade at least a portion of the substrate to polish the substrate.

18. A method of polishing a substrate comprising:
(i) providing a substrate, wherein the substrate comprises a silicon layer;
(ii) providing a polishing pad;
(iii) providing the chemical-mechanical polishing composition of claim 1 ;
(iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition; and
(v) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate to abrade at least a portion of the silicon layer on a surface of the substrate to polish the substrate.

19. The method of claim 18 , wherein the silicon layer is selected from a silicon oxide layer, a silicon nitride layer, a polysilicon layer, and combinations thereof.

20. The method of claim 18 , wherein the silicon layer is a tetraethoxysilane (TEOS) layer.

Assignees

• Cabot Microelectronics Corp

Inventors

• Reiss Brian
• Lam Viet
• Jia Renhe

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• C01P2006/12

  Surface area · CPC title

• C09K3/1463

  Aqueous liquid suspensions · CPC title

• C01P2004/51

  Particles with a specific particle size distribution · CPC title