Creating arbitrary patterns on a 2-D uniform grid VCSEL array

Patent metadata

Field	Value
Publication number	US-10411437-B2
Application number	US-201816180041-A
Country	US
Kind code	B2
Filing date	Nov 5, 2018
Priority date	Aug 31, 2017
Publication date	Sep 10, 2019
Grant date	Sep 10, 2019

Abstract

An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

First claim

The invention claimed is:

1. An optoelectronic device, comprising:
a semiconductor substrate; and
an array of optoelectronic cells, which are formed on the semiconductor substrate and comprise:
first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack;
second epitaxial layers formed over the lower DBR stack, defining a quantum well structure;
third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack;
an isolation layer formed between the lower and upper DBR stacks; and
electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell,
wherein the array comprises a first set of the optoelectronic cells that are configured to emit laser radiation in response to the excitation current and a second set of the optoelectronic cells, interleaved with the first set, wherein the isolation layer is etched out of an area of the quantum well structure in the first set of the optoelectronic cells and is not etched out of the second set of the optoelectronic cells so that the optoelectronic cells in the second set do not emit the laser radiation.

2. The optoelectronic device of claim 1 , wherein the array is a regular array, while the second set of the optoelectronic cells is selected so that the first set of the optoelectronic cells defines an uncorrelated pattern within the array.

3. The optoelectronic device of claim 1 , wherein the lower DBR stack comprises an n-type DBR, and the upper DBR stack comprises a p-type DBR.

4. The optoelectronic device of claim 1 , wherein neighboring optoelectronic cells in the array are isolated from one another by isolation trenches.

5. A method for manufacturing an optoelectronic device, the method comprising:
depositing first epitaxial layers on a semiconductor substrate to define a lower distributed Bragg-reflector (DBR) stack;
depositing second epitaxial layers over the first epitaxial layers to define a quantum well structure;
depositing third epitaxial layers over the second epitaxial layers to define an upper DBR stack;
etching the epitaxial layers to define an array of optoelectronic cells, including a first set of the optoelectronic cells and a second set of the optoelectronic cells, which is interleaved with the first set;
depositing an isolation layer between the lower and upper DBR stacks;
depositing over the third epitaxial layers electrodes configurable to inject an excitation current into the quantum well structure of each optoelectronic cell so as to cause the optoelectronic cells in the first set to emit laser radiation in response to the excitation current; and

etching the isolation layer out of an area of the quantum well structure in the first set of the optoelectronic cells while not etching the isolation layer out of the second set of the optoelectronic cells, so that the optoelectronic cells in the second set do not emit the laser radiation.

6. The method of claim 5 , wherein the array is a regular array, and wherein physically modifying the at least one element comprises selecting the second set of the optoelectronic cells so that the first set of the optoelectronic cells defines an uncorrelated pattern within the array.

7. The method of claim 5 , wherein the lower DBR stack comprises an n-type DBR, and the upper DBR stack comprises a p-type DBR.

8. The method of claim 5 , and comprising etching isolation trenches between neighboring optoelectronic cells in the array.

Assignees

• Apple Inc

Inventors

• Lin Chin Han
• Li Weiping
• Fan Xiaofeng

Classifications

• H01S5/0425

  Electrodes, e.g. characterised by the structure · CPC title

• H01S5/04256

  characterised by the configuration · CPC title

• H01S5/2063

  obtained by particle bombardment · CPC title

• H01S5/18333

  only above the active layer · CPC title

• H01S5/18311

  using selective oxidation · CPC title