Semiconductor light-emitting device and optical-semiconductor-mounting substrate

Patent metadata

Field	Value
Publication number	US-10411174-B2
Application number	US-201515129848-A
Country	US
Kind code	B2
Filing date	Mar 27, 2015
Priority date	Mar 31, 2014
Publication date	Sep 10, 2019
Grant date	Sep 10, 2019

Abstract

A semiconductor light-emitting device including at least a substrate, a reflector having a concave cavity, and an optical semiconductor element, wherein the reflector is formed of a resin composition containing an inorganic substance; in a spectrum obtained when the reflector is measured by an X-ray diffraction method using CuKα radiation (wavelength=1.5418 A), an intensity ratio (P1/P2) of a peak intensity P1 of the highest intensity diffraction peak in a range of diffraction angle 2θ of 0° to 24° to the peak intensity P2 of the highest intensity diffraction peak in a range of diffraction angle 2θ of more than 24° to 70° is 0.01 or more and 1.0 or less; and an ash content of the reflector is 60% by mass or more. A semiconductor light-emitting device and an optical-semiconductor-mounting substrate, including a reflector having an extremely high light reflection property and excellent dimensional stability.

First claim

The invention claimed is:

1. A semiconductor light-emitting device comprising:
a substrate;
a reflector having a concave cavity; and
an optical semiconductor element, wherein:
the reflector is formed of a resin composition containing an inorganic substance and at least one of polymethylpentene, polyethylene, or polypropylene;
the reflector has a reflectance of 90% or more;
in a spectrum obtained when the reflector is measured by an X-ray diffraction method using CuKα radiation (wavelength=1.5418 A), an intensity ratio (P1/P2) of a peak intensity P1 of a highest intensity diffraction peak in a range of a first diffraction angle 2θ of 0° to 24° to the peak intensity P2 of the highest intensity diffraction peak in a range of a second diffraction angle 2θ of more than 24° to 70° is 0.01 or more and 1.0 or less; and
an ash content of the reflector is 60% by mass or more, which reflects a weight ratio of the inorganic substance in the resin composition that forms the reflector.

2. The semiconductor light-emitting device according to claim 1 , wherein, among the diffraction peaks in a range of the first diffraction angle 2θ of 0° to 24°, the highest intensity diffraction peak is any one of peaks at 2θ=9.3±1°, 13.4±1°, 16.7±1°, and 18.3±1°.

3. The semiconductor light-emitting device according to claim 1 , wherein, in a range of the second diffraction angle 2θ of more than 24° to 70°, the highest intensity diffraction peak is any one of peaks at 2θ=27.4±1°, 36.1±1°, 41.2±1°, 54.3±1°, 56.6±1°, 69.0±1°, 25.3±1°, 37.9±1°, 48.1±1°, 54.0±1°, 55.1±1°, 62.7±1°, 25.7±1°, 30.8±1°, 36.3±1°, 48.0±1°, 54.2±1°, and 55.2±1°.

4. The semiconductor light-emitting device according to claim 1 , wherein the diffraction peaks in a range of the first diffraction angle 2θ of 0° to 24° include a combination of diffraction peaks at least at 2θ=9.3±1°, 13.4±1°, 16.7±1°, and 18.3±1°.

5. The semiconductor light-emitting device according to claim 1 , wherein the diffraction peaks in a range of the second diffraction angle 2θ of more than 24° to 70° include any one of the following combinations (1) to (3):
(1) a combination of diffraction peaks at least at 2θ=27.4±1°, 36.1±1°, 41.2±1°, 54.3±1°, 56.6±1°, and 69.0±1°;
(2) a combination of diffraction peaks at least at 2θ=25.3±1°, 37.9±1°, 48.1±1°, 54.0±1°, 55.1±1°, and 62.7±1°; and
(3) a combination of diffraction peaks at least at 2θ=25.3±1°, 25.7±1°, 30.8±1°, 36.3±1°, 48.0±1°, 54.2±1°, and 55.2±1°.

6. The semiconductor light-emitting device according to claim 1 , wherein, in a range of the first diffraction angle 2θ of 0° to 24°, the highest intensity diffraction peak is a peak at 2θ=9.3±1°.

7. The semiconductor light-emitting device according to claim 1 , wherein, in a range of the second diffraction angle 2θ of more than 24° to 70°, the highest intensity diffraction peak is a peak at 2θ=27.4±1°.

8. The semiconductor light-emitting device according to claim 1 , wherein the optical semiconductor element is an LED element.

9. The semiconductor light-emitting device according to claim 1 , wherein the cavity of the reflector is filled with a sealing resin.

10. The semiconductor light-emitting device according to claim 1 , wherein the resin composition further contains a cross-linking agent.

11. An optical-semiconductor-mounting substrate comprising:
a substrate; and
a reflector having a concave cavity, wherein:
the reflector is formed of a resin composition containing an inorganic substance and at least one of polymethylpentene, polyethylene, or polypropylene;
the reflector has a reflectance of 90% or more;
in a spectrum obtained when the reflector is measured by an X-ray diffraction method using CuKα radiation (wavelength=1.5418 A), an intensity ratio (P1/P2) of a peak intensity P1 of the highest intensity diffraction peak in a range of a first diffraction angle 2θ of 0° to 24° to the peak intensity P2 of the highest intensity diffraction peak in a range of a second diffraction angle 2θ of more than 24° to 70° is 0.01 or more and 1.0 or less; and
an ash content of the reflector is 60% by mass or more, which reflects a weight ratio of the inorganic substance in the resin composition that forms the reflector.

12. The optical-semiconductor-mounting substrate according to claim 11 , wherein, among the diffraction peaks in a range of the first diffraction angle 2θ of 0° to 24°, the highest intensity diffraction peak is any one of peaks at 2θ=9.3±1°, 13.4±1°, 16.7±1°, and 18.3±1°.

13. The optical-semiconductor-mounting substrate according to claim 11 , wherein, in a range of the second diffraction angle 2θ of more than 24° to 70°, the highest intensity diffraction peak is any one of peaks at 2θ=27.4±1°, 36.1±1°, 41.2±1°, 54.3±1°, 56.6±1°, 69.0±1°, 25.3±1°, 37.9±1°, 48.1±1°, 54.0±1°, 55.1±1°, 62.7±1°, 25.7±1°, 30.8±1°, 36.3±1°, 48.0±1°, 54.2±1°, and 55.2±1°.

14. The optical-semiconductor-mounting substrate according to claim 11 , wherein the diffraction peaks in a range of the first diffraction angle 2θ of 0° to 24° include a combination of diffraction peaks at least at 2θ=9.3±1°, 13.4±1°, 16.7±1°, and 18.3±1°.

15. The optical-semiconductor-mounting substrate according to claim 11 , wherein the diffraction peaks in a range of the second diffraction angle 2θ of more than 24° to 70° include any one of the following combinations (1) to (3):
(1) a combination of diffraction peaks at least at 2θ=27.4±1°, 36.1±1°, 41.2±1°, 54.3±1°, 56.6±1°, and 69.0±1°;
(2) a combination of diffraction peaks at least at 2θ=25.3±1°, 37.9±1°, 48.1±1°, 54.0±1°, 55.1±1°, and 62.7±1°; and
(3) a combination of diffraction peaks at least at 2θ=25.3±1°, 25.7±1°, 30.8±1°, 36.3±1°, 48.0±1°, 54.2±1°, and 55.2±1°.

16. The optical-semiconductor-mounting substrate according to claim 11 , wherein, in a range of the first diffraction angle 2θ of 0° to 24°, the highest intensity diffraction peak is a peak at 2θ=9.3±1°.

17. The optical-semiconductor-mounting substrate according to claim 11 , wherein, in a range of the second diffraction angle 2θ of more than 24° to 70°, the highest intensity diffraction peak is a peak at 2θ=27.4±1°.

18. The optical-semiconductor-mounting substrate according to claim 11 , wherein the cavity of the reflector is filled with a sealing resin.

19. The optical-semiconductor-mounting substrate according to claim 11 , wherein the resin composition further contains a cross-linking agent.

20. The semiconductor light-emitting device according to claim 1 , wherein the inorganic substance includes titanium oxide and glass fiber.

21. The semiconductor light-emitting device according to claim 1 , wherein the resin composition further contains a cross-linking agent having a saturated or unsaturated cyclic structure wherein at least one atom among atoms forming at least one ring is bonded to any of an allyl group, a methacryl group, an allyl group via a linking group, or a methacryl group via a linking group.

22. The semiconductor light-emitting device according to claim 1 , wherein the resin composition further contains a cross-linking agent comprising triallyl isocyanurate, methyldiallyl isocyanurate, diallylmonoglycidyl isocyanurate, monoallyldiglycidyl isocyanurate, trimethallyl isocyanurate, a diallyl ester of orthophthalic acid, or a diallyl ester of isophthalic acid.

23. A semiconductor light-emitting device comprising:
a substrate;
a reflector having a concave cavity; and
an optical semiconductor element, wherein:
the reflector is formed of a resin

Assignees

• Dainippon Printing Co Ltd

Inventors

• Kimura Aki
• Sakayori Katsuya
• Amagai Kei
• Kanke Satoru
• Sakai Toshiyuki
• Takarabe Toshimasa
• Mizoshiri Makoto

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W72/0198

  batch processes · CPC title

• H10W72/075

  of bond wires · CPC title