Lateral avalanche photodetector

Patent metadata

Field	Value
Publication number	US-10411149-B2
Application number	US-201816168249-A
Country	US
Kind code	B2
Filing date	Oct 23, 2018
Priority date	Mar 10, 2014
Publication date	Sep 10, 2019
Grant date	Sep 10, 2019

Abstract

A lateral Ge/Si APD constructed on a silicon-on-insulator wafer includes a silicon device layer having regions that are doped to provide a lateral electric field and an avalanche region. A region having a modest doping level is in contact with a germanium body. There are no metal contacts made to the germanium body. The electrical contacts to the germanium body are made by way of the doped regions in the silicon device layer.

First claim

What is claimed is:

1. An avalanche photodetector, comprising:
a substrate;
a device layer including a plurality of regions on the substrate, comprising:
a first contact region including a first level of p or n doping,
a modest doping region,
a charge region including a same kind of doping as the first contact region, but at a second level of doping, less than said first level of doping,
an avalanche region, and
a second contact region including a third level of doping, opposite in kind to the first and charge regions;

a light-absorbing body adjacent to the device layer;
a first electrical terminal in electrical communication with the first contact region; and
a second electrical terminal in electrical communication with the second contact region.

2. The avalanche photodetector according to claim 1 , wherein the modest doping region includes a doping level that is lower than either the first contact region or the charge region.

3. The avalanche photodetector according to claim 2 , wherein the modest doping region includes a doping level that is lower than either the first contact region or the charge region by approximately an order of magnitude.

4. The avalanche photodetector according to claim 1 , wherein the avalanche region includes a doping level that is lower than either the first contact region or the charge region.

5. The avalanche photodetector according to claim 4 , wherein the avalanche region includes a doping level that is lower than either the first contact region or the charge region by approximately an order of magnitude.

6. The avalanche photodetector according to claim 1 , wherein the light-absorbing body is in electrical contact with at least one of the charge region, the modest doping region, and the first contact region, wherein there are no metal contacts with the light-absorbing body.

7. The avalanche photodetector according to claim 6 , further comprising an oxide layer covering the light-absorbing body preventing metal contact with the light-absorbing body.

8. The avalanche photodetector according to claim 1 , wherein the light-absorbing body is in electrical contact with the charge region.

9. The avalanche photodetector according to claim 1 , wherein the light-absorbing body is in electrical contact with the modest doping region, and not in mechanical contact with the first contact region or the charge region.

10. The avalanche photodetector according to claim 1 , wherein the light-absorbing body comprises a material with a ionization rate of approximately 1.

11. The avalanche photodetector according to claim 1 , wherein the light-absorbing body comprises germanium.

12. The avalanche photodetector according to claim 11 , wherein the light-absorbing body includes doping.

13. The avalanche photodetector according to claim 1 , wherein the light-absorbing body consists of an intrinsic germanium body.

14. The avalanche photodetector according to claim 1 , wherein the device layer comprises a material with an ionization rate of less than 0.1.

15. The avalanche photodetector according to claim 1 , wherein the device layer comprises silicon.

16. The avalanche photodetector according to claim 15 , wherein the substrate comprises a semiconductor wafer.

17. The avalanche photodetector according to claim 16 , wherein the semiconductor wafer comprises a silicon-on-insulator wafer including the silicon device layer.

18. The avalanche photodetector according to claim 1 , wherein the light-absorbing body comprises a triangular shape.

19. The avalanche photodetector according to claim 1 , further comprising a buffer layer between the light-absorbing body and the device layer comprising at least one of SiGe, amorphous Ge, and SiN.

Assignees

• Elenion Tech Llc

Inventors

• Novack Ari
• Liu Yang
• Zhang Yi

Classifications

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• H01L31/1804

  Electricity · mapped topic

• H01L31/1075 Primary

  Electricity · mapped topic

• H01L31/035281

  Electricity · mapped topic

• H01L31/02327

  Electricity · mapped topic