Integrated circuits with memory cells and method for producing the same

Patent metadata

Field	Value
Publication number	US-10411027-B2
Application number	US-201715787764-A
Country	US
Kind code	B2
Filing date	Oct 19, 2017
Priority date	Oct 19, 2017
Publication date	Sep 10, 2019
Grant date	Sep 10, 2019

Abstract

Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a substrate and a fin extending from the substrate. The fin includes a first and second fin sidewall, and a memory cell layer is adjacent to the first and second fin sidewalls. A first control gate is adjacent to the memory cell layer where the memory cell layer is between the first fin sidewall and the first control gate. A second control gate is also adjacent to the memory cell layer, where the memory cell layer is between the second fin sidewall and the second control gate. The first and second control gates are electrically isolated from each other.

First claim

What is claimed is:

1. An integrated circuit comprising:
a substrate;
adjacent fins extending from the substrate, where each of the adjacent fins comprises a first fin sidewall and a second fin sidewall;
a memory cell layer adjacent to the first fin sidewall and the second fin sidewall of each of the adjacent fins, wherein the memory cell layer comprises a memory cell layer top surface, wherein the memory cell layer comprises a base insulator layer, an electron trap layer, and a cover layer, and wherein the base insulator layer overlies the adjacent fins, the electron trap layer overlies the adjacent fins, and the cover layer overlies the adjacent fins;
a first control gate adjacent to the memory cell layer, wherein the first control gate comprises a control gate top surface, wherein the memory cell layer is positioned between the first fin sidewall of each of the adjacent fins and the first control gate, wherein one first control gate fills the position between portions of the memory cell layer that are adjacent to first fin sidewalls of the adjacent fins such that the control gate top surface is co-planar with the memory cell layer top surface for an entire distance between the adjacent fins; and
a second control gate adjacent to the memory cell layer, wherein the memory cell layer is positioned between the second fin sidewall of at least one of the adjacent fins and the second control gate, and wherein the second control gate is electrically isolated from the first control gate.

2. The integrated circuit of claim 1 wherein:
the base insulator layer comprises silicon dioxide;
the electron trap layer comprises silicon nitride; and
the cover insulator layer comprises silicon dioxide.

3. The integrated circuit of claim 2 wherein:
the base insulator layer is positioned between the adjacent fins and the electron trap layer; and
the electron trap layer is positioned between the base insulator layer and the cover insulator layer.

4. The integrated circuit of claim 1 further comprising:
a fin insulator underlying the memory cell layer, wherein the fin insulator further underlies the first control gate.

5. The integrated circuit of claim 1 further comprising:
a first control line in electrical communication with the first control gate; and
a second control line in electrical communication with the second control gate, wherein the first control line is electrically isolated from the second control line.

6. The integrated circuit of claim 1 further comprising:
a source line in electrical communication with at least one of the adjacent fins.

7. The integrated circuit of claim 6 wherein the base insulator layer underlies the first control gate, the electron trap layer underlies the first control gate, and the cover layer underlies the first control gate.

8. The integrated circuit of claim 6 wherein:
the memory cell layer underlies the first control gate; and
the memory cell layer underlies the second control gate.

9. The integrated circuit of claim 6 wherein:
the memory cell layer is electrically insulating.

10. The integrated circuit of claim 6 wherein:
all of the control gate top surface of the first control gate is co-planar with the memory cell layer top surface.

11. An integrated circuit comprising:
a substrate;
a fin extending from the substrate;
a memory cell layer directly overlying the fin such that the memory cell layer directly contacts an upper surface of the fin, wherein the memory cell layer comprises a memory cell layer top surface;
a first memory cell, wherein the first memory cell comprises the fin, wherein the first memory cell comprises the memory cell layer, wherein the first memory cell comprises a first control gate, wherein the first control gate comprises a control gate top surface that is co-planar with the memory cell layer top surface, and wherein all of the control gate top surface is planar;
a second memory cell separate from the first memory cell, wherein the second memory cell comprises the same fin as the first memory cell, the second memory cell comprises the same memory cell layer as the first memory cell, the second memory cell comprises a second control gate that is different than the first control gate, and wherein the memory cell layer is continuous from the first memory cell to the second memory cell; and
wherein one first control gate is part of at least two different memory cells, wherein the at least two different memory cells that comprise the one first control gate comprise different fins.

12. The integrated circuit of claim 11 wherein:
the memory cell layer comprises a base insulator layer, an electron trap layer, and a cover insulator layer.

13. The integrated circuit of claim 12 wherein:
the base insulator layer comprises silicon dioxide;
the electron trap layer comprises silicon nitride; and
the cover insulator layer comprises silicon dioxide.

14. The integrated circuit of claim 11 wherein:
the fin comprises a first fin sidewall and a second fin sidewall, wherein:
the first control gate is adjacent to the fin such that the memory cell layer is positioned between the first control gate and the first fin sidewall; and
the second control gate is adjacent to the fin such that the memory cell layer is positioned between the second control gate and the second fin sidewall.

15. The integrated circuit of claim 14 further comprising:
a fin insulator adjacent to the first fin sidewall, wherein the first control gate overlies the fin insulator.

16. The integrated circuit of claim 15 wherein the memory cell layer underlies the first control gate such that the memory cell layer is positioned between the first control gate and the fin insulator.

17. The integrated circuit of claim 14 wherein:
the memory cell layer top surface is co-planar with all of the control gate top surface.

18. The integrated circuit of claim 11 wherein the memory cell layer is electrically insulating.

19. A method of producing an integrated circuit comprising:
forming a memory cell layer directly overlying adjacent fins that extend from a substrate such that the memory cell layer directly contacts a top surface of the adjacent fins, wherein the memory cell layer is also formed adjacent to a first fin sidewall and adjacent to a second fin sidewall of each of the adjacent fins, and wherein the memory cell layer comprises a base insulator layer, an electron trap layer, and a cover layer;
forming a first control gate adjacent to the memory cell layer such that the memory cell layer is between the first fin sidewall of each of the adjacent fins and the first control gate;
forming a second control gate adjacent to the memory cell layer such that the memory cell layer is between the second fin sidewall of at least one of the adjacent fins and the second control gate, and wherein the second control gate is electrically isolated from the first control gate; and
planarizing the first control gate and the second control gate such that a control gate top surface is co-planar with a memory cell layer top surface for an entire distance between the adjacent fins, and wherein one first control gate fills the position between portions of the memory cell layer that are adjacent to the first fin sidewalls of the adjacent fins.

Assignees

• Globalfoundries Sg Pte Ltd

Inventors

• Zhu Ming
• Li Pinghui
• Toh Eng Huat
• Nga Yiang Aun
• Shum Danny Pak-Chum

Classifications

• H01L29/42344

  Electricity · mapped topic

• H01L27/11568 Primary

  Electricity · mapped topic

• H01L27/11573

  Electricity · mapped topic

• H01L29/7851

  Electricity · mapped topic

• H10D30/6211

  having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates · CPC title