Semiconductor device and manufacturing method for the same
US-2015270355-A1 · Sep 24, 2015 · US
Semiconductor device and method of manufacturing semiconductor device
US10410868B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10410868-B2 |
| Application number | US-201815882687-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 29, 2018 |
| Priority date | Jun 3, 2013 |
| Publication date | Sep 10, 2019 |
| Grant date | Sep 10, 2019 |
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- Title
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Abstract
Official abstract text for this publication.
A semiconductor device includes a first nitride semiconductor layer formed over a substrate, a second nitride semiconductor layer formed over the first nitride semiconductor layer and having a band gap wider than a band gap of the first nitride semiconductor layer, a trench penetrating through the second nitride semiconductor layer and reaching an inside of the first nitride semiconductor layer, a gate electrode placed in the trench over a gate insulating film, and a first electrode and a second electrode formed over the second nitride semiconductor layer on both sides of the gate electrode, respectively.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device, comprising: a first nitride semiconductor layer formed over a substrate; a second nitride semiconductor layer formed over the first nitride semiconductor layer and having a band gap wider than a band gap of the first nitride semiconductor layer; a trench penetrating through the second nitride semiconductor layer and reaching an inside of the first nitride semiconductor layer; a gate electrode placed in the trench over a gate insulating film; and a first electrode and a second electrode formed over the second nitride semiconductor layer on both sides of the gate electrode, respectively, wherein the gate insulating film includes a first film placed over the second nitride semiconductor layer on both sides of the trench and including an opening region including a formation region of the trench, and a second film formed over a portion of the first film including the opening region such that an upper surface of another portion of the first film is exposed outside the second film, wherein the first film is retreated from an end portion of the trench on a side of the first electrode, and wherein a distance from the end portion of the trench to the first film is 0.2 μm or greater. 2. The semiconductor device according to claim 1 , wherein the first film is further retreated from another end portion of the trench on a side of the second electrode. 3. The semiconductor device according to claim 1 , wherein the first film comprises a film containing silicon nitride, and wherein the second film comprises a film containing aluminum oxide. 4. The semiconductor device according to claim 1 , wherein the trench comprises a tapered sidewall.
Assignees
Inventors
Classifications
for Group V materials or Group III-V materials · CPC title
Nitrides · CPC title
using chemical vapour deposition [CVD] · CPC title
- H10D64/01358Primary
the insulator being formed after the semiconductor body, the semiconductor being a Group III-V material · CPC title
Electricity · mapped topic
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- What does patent US10410868B2 cover?
- A semiconductor device includes a first nitride semiconductor layer formed over a substrate, a second nitride semiconductor layer formed over the first nitride semiconductor layer and having a band gap wider than a band gap of the first nitride semiconductor layer, a trench penetrating through the second nitride semiconductor layer and reaching an inside of the first nitride semiconductor layer…
- Who is the assignee on this patent?
- Renesas Electronics Corp
- What technology area does this patent fall under?
- Primary CPC classification H10D64/01358. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Sep 10 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).