Device processing method and device processing apparatus

Patent metadata

Field	Value
Publication number	US-10410826-B2
Application number	US-201616069796-A
Country	US
Kind code	B2
Filing date	Mar 18, 2016
Priority date	Mar 18, 2016
Publication date	Sep 10, 2019
Grant date	Sep 10, 2019

Abstract

The invention is directed to a technique for reducing the time from the start of fabrication of a prototype structure to the completion of fabrication of a real structure. A device processing method includes steps of: fabricating a first structure using an ion beam under a first condition in a first region on a substrate; measuring a size of the first structure which is fabricated; comparing the measurement result with design data; determining a second condition from the comparison result; and fabricating a second structure using the ion beam under the second condition in a second region on the substrate.

First claim

The invention claimed is:

1. A device processing method comprising steps of:
fabricating a first structure using an ion beam under a first condition in a first region on a substrate;
measuring a size of the first structure which is fabricated;
comparing the measurement result with design data;
determining a second condition from the comparison result, said determining including:
calculating at least one of a film formation rate which is a film formation amount and a processing rate which is a processing amount, with respect to an FIB dose amount at the time of fabricating the first structure, and
calculating an FIB dose amount to be added to or subtracted from the first condition; and
fabricating a second structure using the ion beam under the second condition in a second region on the substrate.

2. The device processing method according to claim 1 , wherein
the second structure is a structure constituting an MEMS, and is fabricated on the MEMS in the middle of manufacturing in the second region.

3. The device processing method according to claim 1 , wherein
the step of measuring the size of the first structure includes exposing a cross section of the first structure by etching using the ion beam and performing size measurement of the first structure using the cross section.

4. The device processing method according to claim 1 , wherein
the step of measuring the size of the first structure includes performing the size measurement of the first structure using an SEM or an SIM.

5. The device processing method according to claim 1 , wherein
the design data includes size data of an MEMS structure and an allowable range of the size data, and
the step of comparing the measurement result with the design data includes automatically calculating a difference between the size measurement result of the first structure and the design data, automatically determining whether the difference is included in the allowable range, and determining the second condition only when the difference is not included in the allowable range.

6. The device processing method according to claim 1 , wherein
the step of fabricating the first structure, the step of measuring the size of the first structure, and the step of fabricating the second structure are performed in an in-line manner in the same apparatus without destabilizing a vacuum condition.

7. The device processing method according to claim 1 , wherein
the step of fabricating the first structure includes fabricating the first structure under the first condition at a plurality of points other than the first region.

8. A device processing method comprising steps of:
fabricating a first structure using an ion beam under a first condition in a first region on a substrate;
measuring a size of the first structure which is fabricated;
comparing the measurement result with design data;
determining a second condition from the comparison result; and
fabricating a second structure using the ion beam under the second condition in a second region on the substrate, said fabricating including fabricating the first structure under the first condition at a plurality of points other than the first region.

9. The device processing method according to claim 8 , wherein
the second structure is a structure constituting an MEMS, and is fabricated on the MEMS in the middle of manufacturing in the second region.

10. The device processing method according to claim 8 , wherein
the step of measuring the size of the first structure includes exposing a cross section of the first structure by etching using the ion beam and performing size measurement of the first structure using the cross section.

11. The device processing method according to claim 8 , wherein
the step of measuring the size of the first structure includes performing the size measurement of the first structure using an SEM or an SIM.

12. The device processing method according to claim 8 , wherein
the design data includes size data of an MEMS structure and an allowable range of the size data, and
the step of comparing the measurement result with the design data includes automatically calculating a difference between the size measurement result of the first structure and the design data, automatically determining whether the difference is included in the allowable range, and determining the second condition only when the difference is not included in the allowable range.

13. The device processing method according to claim 8 , wherein
the step of fabricating the first structure, the step of measuring the size of the first structure, and the step of fabricating the second structure are performed in an in-line manner in the same apparatus without destabilizing a vacuum condition.

14. The device processing method according to claim 8 , wherein
the step of determining the second condition includes a step of calculating at least one of a film formation rate which is a film formation amount and a processing rate which is a processing amount, with respect to an FIB dose amount at the time of fabricating the first structure, and a step of calculating an FIB dose amount to be added to or subtracted from the first condition.

Assignees

• Hitachi Ltd

Inventors

• Kawamura Tetsufumi
• Sagawa Misuzu
• Watanabe Kazuki
• Watanabe Keiji
• Machida Shuntaro
• Sugii Nobuyuki
• Ryuzaki Daisuke

Classifications

• H10P74/238

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H01J2237/2817

  Pattern inspection · CPC title

• H01J2237/31749

  Focused ion beam · CPC title

• H01J2237/30455

  Correction during exposure · CPC title