TIR imaging lens, image capturing system having the same, and associated methods

US10409041B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10409041-B2
Application numberUS-201815933014-A
CountryUS
Kind codeB2
Filing dateMar 22, 2018
Priority dateJan 23, 2012
Publication dateSep 10, 2019
Grant dateSep 10, 2019

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method of manufacturing lenses includes creating a wafer-level master, overmolding the wafer-level master to form a daughter replica, casting a polymer lens shapes onto a wafer using the daughter replica, transferring the polymer lens shapes into the wafer, and singulating the wafer to create individual dies with a lens thereon. The wafer may be silicon, e.g., silicon having a resistivity between 0.1 and 100 Ωcm.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of manufacturing lenses, the method comprising: creating a wafer-level master; overmolding the wafer-level master to form a daughter replica; casting a polymer lens shapes onto a silicon wafer having a resistivity between 0.1 and 100 Ωm using the daughter replica; transferring the polymer lens shapes into the wafer; and singulating the wafer to create individual dies with a lens thereon. 2. The method as claimed in claim 1 , wherein creating the wafer-level master includes machining a metal substrate. 3. The method as claimed in claim 2 , wherein machining includes diamond turning. 4. The method as claimed in claim 2 , wherein creating the wafer-level master includes machining perturbed lens shapes into the wafer-level master such that the transferred lens shape in silicon best meets a desired lens shape. 5. The method as claimed in claim 1 , further comprising, before singulating, forming die features on the wafer, at least one die feature being on the individual die. 6. The method as claimed in claim 5 , wherein the die features include at least one of a die alignment mark, a wafer alignment mark, and a die identifier. 7. The method as claimed in claim 5 , further comprising, before casting the polymer lens shapes, patterning die features in photoresist on a surface of the wafer to have polymer lens shapes cast thereon. 8. The method as claimed in claim 7 , further comprising transferring the die features into the wafer. 9. The method as claimed in claim 8 , wherein transferring the die features occurs during transferring the polymer lens shapes. 10. The method as claimed in claim 5 , further comprising, after casting the polymer lens shapes and before transferring, patterning die features on a surface of the wafer having the polymer lens shapes thereon. 11. The method as claimed in claim 10 , wherein patterning includes: depositing a hard mask on the surface of the wafer; and patterning the hard mask. 12. The method as claimed in claim 11 , wherein patterning includes providing a photoresist pattern on the hard mask and etching the hard mask. 13. The method as claimed in claim 12 , further comprising removing polymer while not affecting the hard mask until the wafer is exposed. 14. The method as claimed in claim 13 , further comprising removing the hard mask and the photoresist. 15. The method as claimed in claim 1 , wherein singulating includes etching. 16. The method as claimed in claim 1 , further comprising, after transferring but before singulating, providing a coating on the wafer. 17. The method as claimed in claim 16 , wherein the coating is one of an antireflective coating and a short wave cut filter. 18. The method as claimed in claim 16 , wherein coating includes coating both surfaces of the wafer. 19. The method as claimed in claim 16 , further comprising, after providing the coating and before singulating, forming aperture stops on the lenses. 20. The method as claimed in claim 19 , wherein forming aperture stops includes patterning chrome. 21. The method as claimed in claim 1 , further comprising, before casting, measuring a resistivity of the wafer. 22. The method as claimed in claim 1 , continuing the method when the wafer has a resistivity between 1 and 10 Ωm. 23. The method as claimed in claim 1 , further comprising, before singulating, forming aperture stops on the lenses. 24. The method as claimed in claim 1 , wherein singulating creates circular dies. 25. The method as claimed in claim 1 , wherein singulating creates non-circular dies.

Assignees

Inventors

Classifications

  • Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices · CPC title

  • G02B13/14Primary

    for use with infrared or ultraviolet radiation ({G02B13/008, } G02B13/16 take precedence) · CPC title

  • Telecentric objectives or lens systems · CPC title

  • Electricity · mapped topic

  • Transforming infrared radiation (cameras or camera modules for generating image signals from infrared radiation H04N23/20; circuitry of SSIS for transforming infrared radiation into image signals H04N25/20) · CPC title

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What does patent US10409041B2 cover?
A method of manufacturing lenses includes creating a wafer-level master, overmolding the wafer-level master to form a daughter replica, casting a polymer lens shapes onto a wafer using the daughter replica, transferring the polymer lens shapes into the wafer, and singulating the wafer to create individual dies with a lens thereon. The wafer may be silicon, e.g., silicon having a resistivity bet…
Who is the assignee on this patent?
Flir Systems
What technology area does this patent fall under?
Primary CPC classification G02B13/14. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Sep 10 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).