Radiation detector and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-10408948-B2
Application number	US-201615739873-A
Country	US
Kind code	B2
Filing date	Mar 2, 2016
Priority date	Jul 7, 2015
Publication date	Sep 10, 2019
Grant date	Sep 10, 2019

Abstract

The present invention provides a radiation detector comprising: a scintillator for absorbing radiation to generate light; and a light detector formed in the scintillator, wherein the scintillator is composed of a two-dimensional nanomaterial for imparting ductility. The scintillator is formed by laminating the two-dimensional nanomaterial, the two-dimensional nanomaterial being at least one of graphene oxide, reduced graphene oxide, and graphene quantum dots.

First claim

The invention claimed is:

1. A radiation detector, comprising:
a scintillator for absorbing radiation to generate light; and
a light detector formed in the scintillator,
wherein the scintillator is formed of a two-dimensional nanomaterial for providing ductility.

2. The radiation detector of claim 1 , wherein the scintillator is formed by laminating the two-dimensional nanomaterial which is at least one of a graphene oxide, a reduced graphene oxide, and graphene quantum dots.

3. The radiation detector of claim 1 , wherein the two-dimensional nanomaterial has a chemical formula of MX2,
wherein the M is one of Mo and W, and
wherein the X is one of S, Se and Te.

4. The radiation detector of claim 1 , wherein the light detector includes:
a first contact electrode and a second contact electrode disposed on positions spaced apart from each other; and
an activation layer for connecting the first contact electrode and the second contact electrode with each other, and for forming an electron-hole pair by absorbing light,
wherein the activation layer is formed of a two-dimensional nanomaterial for providing ductility, so as to be coupled to the scintillator in a corresponding shape.

5. The radiation detector of claim 4 , wherein the two-dimensional nanomaterial includes at least one of graphene, a graphene oxide, a reduced graphene oxide, and graphene quantum dots.

6. The radiation detector of claim 4 , wherein the two-dimensional nanomaterial has a chemical formula of MX2,
wherein the M is one of Mo and W, and
wherein the X is one of S, Se and Te.

7. The radiation detector of claim 4 , wherein the light detector includes a passivation layer adhered to the activation layer, supported by the contact electrodes, and configured to restrict exposure of the activation layer to outside.

8. The radiation detector of one of claim 1 , further comprising an insulating layer interposed between the scintillator and the light detector, and configured to prevent an electric signal between the scintillator and the light detector.

9. A method for manufacturing a radiation detector, the method comprising:
manufacturing a scintillator; and
forming a light detector on the scintillator,
wherein the manufacturing a scintillator includes:
manufacturing a polymer solution including a two-dimensional nanomaterial except for graphene;
applying the polymer solution onto a substrate through a printing process;
forming the scintillator by removing moisture of the polymer solution; and
forming an insulating layer on the scintillator.

10. The method of claim 9 , wherein the forming a light detector on the scintillator includes:
forming a two-dimensional nanomaterial on the scintillator as a material of an activation layer;
forming contact electrodes on a surface of the activation layer; and
interposing the activation layer between the contact electrodes by patterning the activation layer.

11. A method for manufacturing a radiation detector, the method comprising:
forming a scintillator by using a two-dimensional nanomaterial except for graphene;
forming a light detector including the two-dimensional nanomaterial on a silicon oxide substrate;
forming a device transfer temporary substrate on the light detector, and immersing the silicon oxide substrate in an SiO2 etching solution for removal; and
attaching the device transfer temporary substrate which supports the light detector, onto a surface of the scintillator.

12. The method of claim 11 , wherein the forming a light detector on a silicon oxide substrate includes:
forming an activation layer by transferring a two-dimensional nanomaterial onto a silicon oxide substrate;
forming two contact electrodes spaced apart from each other on a surface of the activation layer; and
interposing the activation layer between the contact electrodes by patterning the activation layer.

13. The method of claim 11 , further comprising:
dehydrating the device transfer temporary substrate to remove the device transfer temporary substrate attached onto the surface of the scintillator; and
immersing the device transfer temporary substrate in an acetone solution for a chemical reaction.

Assignees

• Kang Changgoo
• Ha Jangho
• Oh Joonho
• Kim Hansoo
• Kim Youngsoo
• Jeong Manhee
• Korea Atomic Energy Res

Inventors

• Kang Changgoo
• Ha Jangho
• Oh Joonho
• Kim Hansoo
• Kim Youngsoo
• Jeong Manhee

Classifications

• G01T1/20 Primary

  with scintillation detectors · CPC title

• G01T1/2023

  Selection of materials · CPC title

• G01T1/2002

  Optical details, e.g. reflecting or diffusing layers · CPC title

• G01T1/2006 Primary

  using a combination of a scintillator and photodetector which measures the means radiation intensity · CPC title